Fast Recovery Epitaxial Diode (FRED)

Fast Recovery
Epitaxial Diode (FRED)
DSEI 30
VRSM
A
1000
1000
Type
C
ISOPLUS 247TM
TO-247 AD
Version A
Version AR
V
1000
1000
DSEI 30-10A
DSEI 30-10AR
C
C
A
A
C (TAB)
A = Anode, C = Cathode
Symbol
Test Conditions
Maximum Ratings
IFRMS
IFAVM ÿÿ①
IFRM
TVJ = TVJM
TC = 85°C; rectangular, d = 0.5
tP < 10 ms; rep. rating, pulse width limited by TVJM
70
30
375
A
A
A
IFSM
TVJ = 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
210
A
A
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
185
195
A
A
TVJ = 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
180
A2s
A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
170
160
A2s
A2s
-40...+150
150
-40...+150
°C
°C
°C
138
W
TVJ
TVJM
Tstg
●
●
●
●
●
●
●
TC = 25°C
Md *
FC
Mounting torque
mounting force with clip
VISOL **
50/60 Hz, RMS, t = 1 minute, leads-to-tab
0.8...1.2
20...120
2500
Weight
6
Nm
N
V~
g
●
●
●
●
●
●
* Verson A only; ** Version AR only
●
Symbol
Test Conditions
IR
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
VR = VRRM
VR = 0.8 • VRRM
VR = 0.8 • VRRM
750
250
7
mA
mA
mA
IF = 36 A;
TVJ = 150°C
TVJ = 25°C
2
2.4
V
V
1.5
12.5
V
mW
0.9
35
K/W
K/W
K/W
VF
Characteristic Values
typ.
max.
For power-loss calculations only
TVJ = TVJM
RthJC
RthCK
RthJA
0.25
trr
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C
35
50
ns
IRM
VR = 540 V; IF = 30 A; -diF/dt = 240 A/ms
L £ 0.05 mH; TVJ = 100°C
16
18
A
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
Version AR isolated and
UL registered E153432
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
●
●
●
●
VT0
rT
International standard package
JEDEC TO-247 AD
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behavior
Epoxy meets UL 94V-0
Applications
●
Ptot
* Patent pending
Features
●
I2t
Isolated
back surface
*
●
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
026
V
VRRM
IFAVM = 30 A
VRRM = 1000 V
trr
= 35 ns
1-2
DSEI 30, 1000 V
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus
-diF/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage
versus diF/dt.
Dimensions
Dim.
Millimeter
Min. Max.
Inches
Min.
Max.
A
B
19.81 20.32
20.80 21.46
0.780
0.819
0.800
0.845
C
D
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
2.2
2.54
0.087
0.102
Fig. 7 Transient thermal impedance junction to case.
© 2000 IXYS All rights reserved
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