PolarHTTM Power MOSFET VDSS ID25 IXTQ 200N06P RDS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 175° C 60 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 60 V VGS VGSM Transient Continuous ±30 ±20 V V ID25 TC = 25° C 200 A ID(RMS) External lead current limit 75 A IDM TC = 25° C, pulse width limited by TJM 400 A IAR TC = 25° C 60 A EAR TC = 25° C 80 mJ EAS TC = 25° C 4.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 714 W -55 ... +175 175 -55 ... +150 °C °C °C TO-3P (IXTQ) Maximum Ratings TJ TJM Tstg TL TSOLD Md 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) Weight TO-3P 300 °C 260 °C 1.13/10 Nm/lb.in. 5.5 g G Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 60A VGS = 15 V, ID = 400A Pulse test, t ≤300 µs, duty cycle d ≤ 2 % D S G = Gate S = Source (TAB) D = Drain TAB = Drain Features l l l International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) © 2006 IXYS All rights reserved = 60 V = 200 A ≤ 6.0 mΩ Ω l l Easy to mount Space savings High power density V TJ = 150° C 5.0 5.0 V ±100 nA 25 250 µA µA 6.0 mΩ mΩ DS99273E(12/05) IXTQ 200N06P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 60A, pulse test 45 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 65 S 5400 pF 3550 pF 1360 pF td(on) 35 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A 60 ns td(off) RG = 3.3 Ω (External) 90 ns 40 ns 200 nC 37 nC 110 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd TO-3P (IXTQ) Outline 0.21° C/W RthJC RthCS ° C/W 0.21 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 200 A ISM Repetitive 400 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr QRM IF = 25 A, -di/dt = 100 A/µs VR = 30 V, VGS = 0 V 90 1.0 ns µC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTQ 200N06P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 350 200 VGS = 10V 9V 8V 175 VGS = 10V 8V 250 I D - Amperes I D - Amperes 150 125 100 7V 75 6V 7V 150 6V 50 5V 25 200 100 50 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 0 1.4 0.5 1 1.5 Fig. 3. Output Characteristics @ 150ºC 2.5 3 3.5 4 4.5 5 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 200 2.2 VGS = 10V 9V VGS = 10V 2 150 R D S ( o n ) - Normalized 175 I D - Amperes 2 V D S - Volts V D S - Volts 8V 125 7V 100 75 6V 50 25 1.8 1.6 I D = 200A 1.4 I D = 100A 1.2 1 0.8 5V 0 0.6 0 0.4 0.8 1.2 1.6 V D S - Volts 2 2.4 2.8 -50 -25 90 2.2 80 I D - Amperes 1.8 VGS = 10V 1.4 VGS = 15V 1.2 TJ = 25ºC 1 150 200 © 2006 IXYS All rights reserved 150 175 250 300 External-Lead Current Limit 30 20 0 I D - Amperes 125 40 0.6 100 100 50 10 50 75 60 0.8 0 50 70 TJ = 175ºC 1.6 25 Fig. 6. Drain Current vs. Case Tem perature 2.4 2 0 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current R D S ( o n ) - Normalized 9V 300 350 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXTQ 200N06P Fig. 8. Transconductance Fig. 7. Input Adm ittance 225 100 200 90 80 150 125 100 TJ = 150ºC 75 25ºC 50 70 g f s - Siemens I D - Amperes 175 60 TJ = -40ºC 50 25ºC 40 150ºC 30 -40ºC 20 25 10 0 0 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 0 25 50 75 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage Fig. 10. Gate Charge 10 350 VDS = 50V 9 300 I D = 100A 8 250 I G = 10mA 7 VG S - Volts I S - Amperes 100 125 150 175 200 225 250 I D - Amperes 200 150 5 4 3 TJ = 150ºC 100 6 2 50 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 0 V S D - Volts 25 50 75 100 125 150 175 200 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1000 R DS(on) Limit 10,000 I D - Amperes Capacitance - picoFarads f = 1MHz C iss C oss 1,000 100µs 1ms 100 10ms DC C rss TJ = 175ºC TC = 25ºC 100 10 0 5 10 15 20 25 V DS - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 V D S - Volts 100 IXTQ 200N06P F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e R( t h ) J C - ºC / W 1.00 0.10 0.01 0.00 0.1 1 10 Pu ls e W id th - m illis e c o n d s © 2006 IXYS All rights reserved 100 1000