MIXA30WB1200TMI

MIXA30WB1200TMI
tentative
3~
Rectifier
XPT IGBT Module
Brake
Chopper
3~
Inverter
VRRM = 1600 V VCES = 1200 V VCES = 1200 V
I DAV =
105 A I C25
I FSM =
320 A VCE(sat) =
=
=
43 A
1.8 V VCE(sat) =
28 A I C25
1.8 V
6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC
Part number
MIXA30WB1200TMI
Backside: isolated
P P1
G1
T1
G3
G5
L1
B
L2
L3
U
V
W
T2
GB
N
G2
NB
G4
EU
G6
EV
EW
Features / Advantages:
Applications:
Package: MiniPack2B
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
● Pumps, Fans
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130208
MIXA30WB1200TMI
tentative
Ratings
Rectifier
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
max.
1700
Unit
V
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
1600
V
IR
reverse current, drain current
VF
forward voltage drop
bridge output current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
VR = 1600 V
TVJ = 25°C
20
µA
TVJ = 125°C
tbd
mA
TVJ = 25°C
1.23
V
IF =
30 A
IF =
60 A
IF =
30 A
IF =
60 A
V
thermal resistance case to heatsink
total power dissipation
I FSM
max. forward surge current
CJ
value for fusing
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
1.19
V
T VJ = 150 °C
105
A
TVJ = 150 °C
0.90
V
d=⅓
for power loss calculation only
R thCH
TVJ = 125 °C
V
rectangular
Ptot
typ.
VR = 1600 V
TC = 80°C
I DAV
I²t
min.
10
mΩ
1.1
K/W
0.35
K/W
TC = 25°C
110
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
320
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
345
A
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
270
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
295
A
t = 10 ms; (50 Hz), sine
TVJ = 45°C
510
A²s
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
VR = 0 V
495
A²s
TVJ = 150 °C
365
A²s
360
A²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 400 V; f = 1 MHz
TVJ = 25°C
Data according to IEC 60747and per semiconductor unless otherwise specified
10
pF
20130208
MIXA30WB1200TMI
tentative
Ratings
Brake IGBT
Symbol
VCES
Definition
VGES
Conditions
min.
max.
1200
Unit
V
max. DC gate voltage
±20
V
VGEM
max. transient gate emitter voltage
±30
V
I C25
collector current
TVJ =
collector emitter voltage
I C80
TC = 25°C
28
A
TC = 80 °C
20
A
100
W
2.1
V
Ptot
total power dissipation
VCE(sat)
collector emitter saturation voltage
VGE(th)
gate emitter threshold voltage
I C = 0.6 mA; VGE = V CE
TVJ = 25°C
I CES
collector emitter leakage current
VCE = VCES ; V GE = 0 V
TVJ = 25°C
I GES
gate emitter leakage current
VGE = ±20 V
TC = 25°C
Q G(on)
total gate charge
VCE = 600 V; VGE = 15 V; I C = 15 A
t d(on)
turn-on delay time
IC =
15 A; VGE = 15 V
TVJ = 25°C
1.8
TVJ = 125°C
2.1
TVJ = 125°C
tr
current rise time
t d(off)
turn-off delay time
tf
current fall time
Eon
turn-on energy per pulse
Eoff
turn-off energy per pulse
RBSOA
reverse bias safe operating area
I CM
typ.
25°C
inductive load
5.9
6.5
V
0.1
mA
mA
0.1
500
TVJ = 125°C
VCE = 600 V; IC = 15 A
VGE = ±15 V; R G = 56 Ω
VGE = ±15 V; R G = 56 Ω
5.4
V
nA
48
nC
70
ns
40
ns
250
ns
100
ns
1.6
mJ
1.7
mJ
TVJ = 125°C
VCEK = 1200 V
45
A
10
µs
SCSOA
short circuit safe operating area
t SC
short circuit duration
VCE = 900 V; VGE = ±15 V
I SC
short circuit current
R G = 56 Ω; non-repetitive
R thJC
thermal resistance junction to case
1.26 K/W
R thCH
thermal resistance case to heatsink
K/W
TVJ = 125°C
A
60
Brake Diode
VRRM
max. repetitive reverse voltage
TVJ = 25°C
1200
V
I F25
forward current
TC = 25°C
18
A
TC = 80 °C
12
A
TVJ = 25°C
2.20
V
TVJ = 25°C
0.1
mA
TVJ = 125°C
0.2
mA
I F 80
VF
forward voltage
I F = 10 A
IR
reverse current
VR = VRRM
Q rr
reverse recovery charge
VR =
I RM
max. reverse recovery current
-di F /dt = 250 A/µs
t rr
reverse recovery time
IF =
E rec
reverse recovery energy
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
TVJ = 125°C
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
600 V
10 A
TVJ = 125°C
V
2.20
1.3
µC
10.5
A
350
ns
0.4
mJ
2.5 K/W
0.83
Data according to IEC 60747and per semiconductor unless otherwise specified
K/W
20130208
MIXA30WB1200TMI
tentative
Ratings
Inverter IGBT
Symbol
VCES
collector emitter voltage
Definition
VGES
Conditions
min.
max.
1200
Unit
V
max. DC gate voltage
±20
V
VGEM
max. transient gate emitter voltage
±30
V
I C25
collector current
TVJ =
I C80
TC = 25°C
43
A
TC = 80 °C
30
A
150
W
2.1
V
Ptot
total power dissipation
VCE(sat)
collector emitter saturation voltage
VGE(th)
gate emitter threshold voltage
IC =
I CES
collector emitter leakage current
VCE = VCES; VGE = 0 V
I GES
gate emitter leakage current
VGE = ±20 V
TC = 25°C
Q G(on)
total gate charge
VCE = 600 V; VGE = 15 V; IC = 25 A
t d(on)
turn-on delay time
I C = 25 A; VGE = 15 V
1 mA; VGE = VCE
TVJ = 25°C
1.8
TVJ = 125 °C
2.1
TVJ = 25°C
current rise time
t d(off)
turn-off delay time
tf
current fall time
Eon
turn-on energy per pulse
Eoff
turn-off energy per pulse
RBSOA
reverse bias safe operating area
I CM
inductive load
VCE =
5.9
TVJ = 125 °C
VGE = ±15 V; R G = 39 Ω
short circuit safe operating area
VCEmax = 1200 V
t SC
short circuit duration
VCE = 900 V; VGE = ±15 V
I SC
short circuit current
R G = 39 Ω; non-repetitive
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
6.5
V
0.15
mA
mA
0.3
nA
76
nC
70
ns
40
ns
250
ns
100
ns
2.5
mJ
3
mJ
TVJ = 125 °C
VCEmax = 1200 V
SCSOA
V
500
600 V; IC = 25 A
VGE = ±15 V; R G = 39 Ω
5.4
TVJ = 25°C
TVJ = 125 °C
tr
typ.
25°C
TVJ = 125 °C
75
A
10
µs
A
100
0.84 K/W
K/W
0.28
Inverter Diode
VRRM
max. repetitive reverse voltage
TVJ = 25°C
1200
V
I F25
forward current
TC = 25°C
41
A
TC = 80 °C
27
A
2.20
V
I F 80
VF
forward voltage
I F = 30 A
TVJ = 25°C
TVJ = 125°C
IR
reverse current
VR = VRRM
* not applicable, see Ices value above
Q rr
reverse recovery charge
I RM
max. reverse recovery current
t rr
reverse recovery time
E rec
reverse recovery energy
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
*
TVJ = 25°C
-di F /dt = 600 A/µs
IF = 30 A; VGE = 0 V
TVJ = 125°C
mA
*
mA
3.5
µC
TVJ = 125°C
VR = 600 V
V
1.90
30
A
350
ns
0.9
mJ
1.2 K/W
0.4
Data according to IEC 60747and per semiconductor unless otherwise specified
K/W
20130208
MIXA30WB1200TMI
tentative
Package
Ratings
MiniPack2B
Symbol
I RMS
Definition
Conditions
min.
RMS current
per terminal
Tstg
storage temperature
-40
T VJ
virtual junction temperature
-40
typ.
Weight
MD
d Spb/Apb
VISOL
Unit
A
125
°C
150
°C
39
2
mounting torque
d Spp/App
max.
R pin-chip
resistance pin to chip
Tvjm
max. virtual junction temperature
Logo
Nm
6.3
5.0
mm
terminal to backside
11.5
10.0
mm
3000
V
2500
V
t = 1 second
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute
2.2
terminal to terminal
creepage distance on surface | striking distance through air
isolation voltage
g
6
V = VCEsat + 2·R·IC resp. V = VF + 2·R·IF
mΩ
175
°C
Part number
yywwx
XXXXXXXXXXX
Part number
Ordering
Standard
=
=
=
=
=
=
=
=
=
M
I
X
A
30
WB
1200
T
MI
Location
Date Code
2D Data Matrix
Part Number
MIXA30WB1200TMI
Module
IGBT
XPT IGBT
Gen 1 / std
Current Rating [A]
6-Pack + 3~ Rectifier Bridge & Brake Unit
Reverse Voltage [V]
Thermistor \ Temperature sensor
MiniPack2B
Marking on Product
MIXA30WB1200TMI
Delivery Mode
Box
Quantity
6
Code No.
511570
105
Temperature Sensor NTC
Symbol
Definition
Conditions
R 25
resistance
TVJ = 25°
B 25/50
temperature coefficient
typ.
min.
5
4.75
max.
Unit
5.25
kΩ
3375
K
104
R
[ ]
103
Equivalent Circuits for Simulation
I
V0
R0
T VJ = 150°C
* on die level
Rectifier
Brake
IGBT
Brake
Diode
Inverter
IGBT
Inverter
Diode
V 0 max
threshold voltage
0.9
1.1
1.25
1.1
1.25
R 0 max
slope resistance *
10
86
90
55
30
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
102
0
V
mΩ
25
50
75
100
TC [°C]
125
150
Typ. NTC resistance vs. temperature
Data according to IEC 60747and per semiconductor unless otherwise specified
20130208
MIXA30WB1200TMI
tentative
Outlines MiniPack2B
W
U
V
G3
L3
G1
G5
L2
P1
T2
L1
B
T1
P
G6
EW
Pin positions with tolerance
G4
EV
G2 NB GB
N
EU
Ø 0.4
P P1
G1
T1
G3
G5
L1
B
L2
L3
V
W
T2
GB
N
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
U
G2
NB
G4
EU
G6
EV
EW
Data according to IEC 60747and per semiconductor unless otherwise specified
20130208