MIXA150R1200VA preliminary XPT IGBT Module VCES = 1200 V I C25 = 220 A VCE(sat) = 1.8 V Boost Chopper Part number MIXA150R1200VA Backside: isolated 6/7 1/2 9 10 4/5 Features / Advantages: Applications: Package: V1-A-Pack ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers ● Pumps, Fans ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130906a MIXA150R1200VA preliminary Ratings IGBT Symbol VCES Definition collector emitter voltage VGES max. DC gate voltage VGEM max. transient gate emitter voltage I C25 collector current Conditions min. TVJ = typ. 25°C TC = 25°C I C80 Ptot total power dissipation VCE(sat) collector emitter saturation voltage I C = 150 A; VGE = 15 V VGE(th) gate emitter threshold voltage IC = I CES collector emitter leakage current VCE = VCES; VGE = 0 V 2.1 V 6.5 V 0.5 mA TVJ = 25°C TVJ = 25°C 1.8 VCE = 600 V; VGE = 15 V; IC = 150 A t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area 5.9 TVJ = 125 °C VGE = ±15 V; R G = 4.7 Ω short circuit duration VCE = 900 V; VGE = ±15 V R G = 4.7 Ω; non-repetitive I SC short circuit current R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink nA 470 nC 70 ns 40 ns 250 ns 100 ns 14 mJ 16 mJ TVJ = 125 °C VCEmax = 1200 V t SC mA 1 500 600 V; IC = 150 A VCEmax = 1200 V V 2.1 5.4 TVJ = 25°C VGE = ±20 V short circuit safe operating area A A total gate charge I CM V W gate emitter leakage current SCSOA ±30 220 150 Q G(on) VGE = ±15 V; R G = 4.7 Ω V 695 I GES VCE = ±20 TC = 25°C TVJ = 125 °C inductive load Unit V TC = 80 °C TVJ = 125 °C 6 mA; VGE = VCE max. 1200 TVJ = 125 °C 450 A 10 µs A 600 0.18 K/W K/W 0.20 Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C 190 A TC = 80 °C 130 A TVJ = 25°C 2.20 V 0.3 mA I F 80 VF forward voltage I F = 150 A IR reverse current VR = VRRM TVJ = 125°C TVJ = 25°C TVJ = 125°C Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved VR = 600 V -di F /dt = 2500 A/µs IF = 150 A; VGE = 0 V TVJ = 125°C V 1.95 0.8 mA 20 µC 175 A 350 ns 10 mJ 0.28 K/W 0.20 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20130906a MIXA150R1200VA preliminary Package Ratings V1-A-Pack Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 100 Unit A -40 125 °C -40 150 °C 2.5 Nm Weight MD 37 2 mounting torque d Spp/App d Spb/Apb VISOL mm 12.0 mm 3600 V 3000 V 50/60 Hz, RMS; IISOL ≤ 1 mA Date Code Location Part number M I X A 150 R 1200 VA yywwA Part Number (Typ) Lot No.: 2D Data Matrix Ordering Standard Part Number MIXA150R1200VA Equivalent Circuits for Simulation V0 6.0 terminal to backside t = 1 second t = 1 minute I terminal to terminal creepage distance on surface | striking distance through air isolation voltage R0 = = = = = = = = Module IGBT XPT IGBT Gen 1 / std Current Rating [A] Boost Chopper Reverse Voltage [V] V1-A-Pack Marking on Product MIXA150R1200VA Delivery Mode Box IGBT Diode threshold voltage 1.1 1.25 V R 0 max slope resistance * 9.2 5.7 mΩ © 2013 IXYS all rights reserved Quantity 10 Code No. 511595 T VJ = 150 °C * on die level V 0 max IXYS reserves the right to change limits, conditions and dimensions. g Data according to IEC 60747and per semiconductor unless otherwise specified 20130906a MIXA150R1200VA preliminary Outlines V1-A-Pack 0,5 +0,2 15,8 ±1 0,25 3,3 ±0,5 2 ±0,25 17 13 R2 35 26 63 31,6 50 ±0,2 38,6 14 ±0,3 14 ±0,3 7 ±0,3 7 ±0,3 4x45° 5 4 3 2 23,5 15 5,5 10 9 8 7 6 ±0,1 R R 5,5 11 ±0,3 11 ±0,3 1 R1 25,75 ±0,15 0,5 51,5 ±0,3 6/7 1/2 9 10 4/5 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130906a MIXA150R1200VA preliminary IGBT 300 300 VGE = 15 V 250 250 200 200 IC TVJ = 125°C [A] 11 V 250 200 IC TVJ = 25°C 150 300 13 V VGE = 15 V 17 V 19 V IC TVJ = 125°C 150 [A] 9V 150 [A] 100 100 100 50 50 50 TVJ = 125°C 0 0 0 1 2 3 0 0 1 VCE [V] Fig. 1 Typ. output characteristics 20 2 3 4 5 E 22 RG = 4.7 VCE = 600 V VGE = ±15 V TVJ = 125°C 18 E Eon Eoff 16 [mJ] 14 Eon 10 Eoff 5 0 Erec 12 0 0 100 200 300 400 500 600 10 0 QG [nC] Fig. 4 Typ. turn-on gate charge 10 11 12 13 IC = 150 A VCE = 600 V VGE = ±15 V TVJ = 125°C 20 20 [mJ] 15 5 9 Fig. 3 Typ. tranfer characteristics 10 [V] 8 Fig. 2 Typ. output characteristics 25 VGE 7 VGE [V] 30 15 6 VCE [V] 35 IC = 150 A VCE = 600 V TVJ = 25°C 50 100 150 200 250 300 IC [A] Fig. 5 Typ. switching energy versus collector current 0 2 4 6 8 10 12 14 16 RG [ ] Fig. 6 Typ. switching energy versus gate resistance 1 ZthJC 0.1 [K/W] Ri 0.027 0.028 0.06 0.065 0.01 0.001 0.01 0.1 1 ti 0.002 0.03 0.03 0.08 10 t [s] Fig. 7 Typ. transient thermal impedance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130906a MIXA150R1200VA preliminary Diode 300 250 200 IC 150 [A] 100 TVJ = 125°C 50 TVJ = 25°C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VCE [V] Fig. 2 Typ. reverse recovery charge Qrr versus di/dt Fig. 1 Typ. Forward current versus VF Fig. 3 Typ. peak reverse current IRM versus di/dt 11 10 TVJ = 125°C 4.7 VR = 600 V Erec 9 [mJ] 8 15 7 27 6 1600 1800 2000 2200 2400 2600 diF /dt [A/μs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 6 Typ. recovery energy Erec versus -di/dt 1 ZthJC 0.1 [K/W] 0.01 0.001 Ri ti 0.054 0.002 0.05 0.03 0.096 0.03 0.08 0.08 0.01 0.1 1 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130906a