RENESAS CY25BAH-8F-T13

CY25BAH-8F
Nch IGBT for Strobe Flasher
REJ03G0284-0100
Rev.1.00
Aug.20.2004
Features
•
•
•
•
Small surface mount package (TSSOP-8)
VCES : 400 V
ICM : 150 A
Drive voltage : 2.5 V
Outline
TSSOP-8
4
3
2
1
5
8
1,2,3,4 : Collector
5,6
: Emitter
7
: Emitter
(for the gate drive)
8
: Gate
4
1
5
Note:
6
7
8
Pin 7 is for the gate drive only.
Note that current from the main circuit cannot flow into this section.(Please see page 3.)
Applications
Strobe flasher for cameras
Maximum Ratings
(Tc = 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulse)
Junction temperature
Storage temperature
Rev.1.00, Aug.20.2004, page 1 of 4
Symbol
VCES
VGES
VGEM
ICM
Ratings
400
±4
±6
150
Unit
V
V
V
A
Tj
Tstg
– 40 to +150
– 40 to +150
°C
°C
Conditions
VGE = 0 V
VCE = 0 V
VCE = 0 V, tw = 10 s
CM = 400 µF
(see performance curve)
CY25BAH-8F
Electrical Characteristics
(Tch = 25°C)
Parameter
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Symbol
V(BR)CES
ICES
IGES
VGE(th)
VCE(sat)
Cies
Min.
450
—
—
0.4
—
—
Typ.
—
—
—
0.6
3.5
6500
Max.
—
10
±10
1.2
7.0
—
Unit
V
µA
µA
V
V
pF
Performance Curves
Maximum Pulse Collector Current
(Conductive Capability in Strobe Flasher Applications)
Pulse Collector Current ICM (A)
160
°C
CM
µF
RG = 68Ω
120
80
40
0
0
1
2
3
4
5
Gate-Emitter Voltage VGE (V)
Rev.1.00, Aug.20.2004, page 2 of 4
6
Test conditions
IC = 1 mA, VGE = 0 V
VCE = 400 V, VGE = 0 V
VGE = ±6 V, VCE = 0 V
VCE = 10 V, IC = 1 mA
IC = 150 A, VGE = 2.5 V
VCE = 25 V, VGE = 10 V,
f = 1MHz
CY25BAH-8F
Application Example
VCM
Xe Tube
VGG
Drive Circuit
CM
4
+
–
3
2
1
RG(on)
10 Ω
RG(off)
68 Ω
5
6
7
8
Control Signal
GE
Ω
VCM
Recommended Operation Maximum Operation
Conditions
Conditions
330 V
350 V
ICP
130 A
150 A
CM
300 µF
400 µF
VGE
2.85 V
2.5 V
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
peak reverse gate current during turn-off must become less than 25 mA. (In general, when RG (off) = 68Ω, it is
satisfied.)
3. The ground of the drive signal must be connected to pin 7 only. If the emitter terminal pins 5 and 6 in which a large
currents flow are given to the device as the drive signal emitter, the device may be damaged due to large currents
since the specified gate voltage is not applied to the IGBT within the device.
4. The operation life should be endured 5,000 shots under the charge current (IXe ≤ 150 A : full luminescence
condition) of main capacitor (CM = 400 µF) which can endure repeated discharge of 5,000 times. Repetition period
under full luminescence condition is over 3 seconds.
5. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours.
Rev.1.00, Aug.20.2004, page 3 of 4
CY25BAH-8F
Package Dimensions
8P2J(TSSOP-8)
Mass (g) (reference value)
JEDEC Code

Lead Material
0.035
Cu alloy
6.4 ± 0.2
4.4 ± 0.1
EIAJ Package Code

A
+0.05
(1)
0.1 ± 0.1
3 ± 0.1
0.65
0.5 ± 0.2
1.2MAX
0.15 - 0.01
0.1
0.25
Symbol
0.13
Dimension in Millimeters
Min
Typ
Max
A
A1
A2
b
D
E
e
x
y
y1
ZD
ZE
0°~ 8°
[Detail A(20/1)]
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form
Standard packing
Quantity
Standard order code
Surface-mounted type
Taping
3000 Type name – T +Direction (1 or 2) +3
Note : Please confirm the specification about the shipping in detail.
Rev.1.00, Aug.20.2004, page 4 of 4
Standard order
code example
CY25BAH-8F-T13
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