CS19-08ho1S High Efficiency Thyristor VRRM = 800 V I TAV = 20 A VT = 1,31 V Single Thyristor Part number CS19-08ho1S Backside: anode 4/2 1 3 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827c CS19-08ho1S Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 800 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 50 µA 1 mA TVJ = 25°C 1,32 V 1,65 V 1,31 V IT = 20 A IT = 40 A IT = 20 A IT = 40 A I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 110 °C RthCH max. Unit 900 V VR/D = 800 V average forward current Ptot typ. VR/D = 800 V I TAV I²t min. 1,73 V T VJ = 125 °C 20 A 31 A TVJ = 125 °C 0,86 V 22 mΩ 0,7 K/W 0,50 K/W TC = 25°C 170 W t = 10 ms; (50 Hz), sine TVJ = 45°C 180 A t = 8,3 ms; (60 Hz), sine VR = 0 V 195 A t = 10 ms; (50 Hz), sine TVJ = 125 °C 155 A t = 8,3 ms; (60 Hz), sine VR = 0 V 165 A t = 10 ms; (50 Hz), sine TVJ = 45°C 160 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 160 A²s t = 10 ms; (50 Hz), sine TVJ = 125 °C 120 A²s 115 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 230 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 125 °C 9 t P = 300 µs PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0,15 A/µs; 60 A I G = 0,15 A; V = ⅔ VDRM 20 A (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current non-repet., I T = pF 5 W 2,5 W 0,5 W 150 A/µs 500 A/µs TVJ = 150°C 500 V/µs VD = 6 V TVJ = 25 °C 1,5 TVJ = -40 °C 2,5 V VD = 6 V TVJ = 25 °C 28 mA TVJ = -40 °C 50 mA TVJ = 150°C 0,2 V 3 mA TVJ = 25 °C 75 mA R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0,1 A; di G /dt = V 0,1 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 50 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0,1 A; di G /dt = 0,1 A/µs VR = 100 V; I T = 20 A; V = ⅔ VDRM TVJ =100 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20150827c CS19-08ho1S Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 35 Unit A -40 125 °C -40 100 °C 150 °C 2 Weight FC 20 mounting force with clip g 60 N Product Marking XXXXXXXXX Part No. IXYS Zyyww Logo Assembly Line Date Code 000000 Assembly Code Ordering Standard Ordering Number CS19-08ho1S Similar Part CS19-08ho1 CS19-12ho1 CS19-12ho1S Equivalent Circuits for Simulation I V0 R0 Package TO-220AB (3) TO-220AB (3) TO-263AB (D2Pak) (2) * on die level Delivery Mode Tape & Reel Quantity 800 Code No. 489204 Voltage class 800 1200 1200 T VJ = 125 °C Thyristor V 0 max threshold voltage 0,86 R0 max slope resistance * 19 IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Marking on Product CS19-08ho1S V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20150827c CS19-08ho1S Outlines TO-263 (D2Pak) Dim. W A A1 H D E Supplier Option D1 L1 c2 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 9.02 (0.355) W Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 4/2 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827c CS19-08ho1S Thyristor 60 160 1000 50 Hz, 80% VRRM VR = 0 V 140 40 120 IT 2 It TVJ = 45°C ITSM 2 100 [A] 20 TVJ = 45°C 100 [A s] TVJ = 125°C [A] 125°C 150°C TVJ = 125°C 80 TVJ = 25°C 0 0,5 60 1,0 1,5 2,0 10 2,5 0,01 0,1 VT [V] Fig. 1 Forward characteristics 100 1 1 3 4 5 6 7 8 910 t [s] t [ms] Fig. 2 Surge overload current Fig. 3 I t versus time (1-10 ms) 2 1000 1: IGD, TVJ = 150°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 2 40 dc = 1 0.5 0.4 0.33 0.17 0.08 30 10 100 VG 5 3 [µs] 1 1 IT(AV)M Limit 20 4 2 [V] typ. tgd 6 [A] 10 TVJ = 125°C 10 4: PGAV = 0.5 W 0,1 5: PGM = 2.5 W 6: PGM = 5 W IGD, TVJ = 125°C 1 10 100 1 10 1000 0 100 1000 0 25 IG [mA] IG [mA] 75 100 125 150 175 TC [°C] Fig. 5 Gate controlled delay time Fig. 4 Gate trigger characteristics 50 Fig. 6 Max. forward current at case temperature 0,8 dc = 1 0.5 0.4 0.33 0.17 0.08 40 30 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 P(AV) 0,6 ZthJC 0,4 20 [K/W] [W] 0,2 10 0 0 10 20 IT(AV) [A] 0 50 100 0,0 100 150 Tamb [°C] © 2015 IXYS all rights reserved 102 ti [s] 0.10 0.08 0.01 0.0011 0.18 0.17 0.17 0.025 0.32 0.09 103 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 101 Rthi [K/W] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20150827c