IXTP8N65X2M - IXYS Corporation

Advance Technical Information
IXTP8N65X2M
X2-Class
Power MOSFET
VDSS
ID25
RDS(on)
= 650V
= 4A
 550m

(Electrically Isolated Tab)
N-Channel Enhancement Mode
OVERMOLDED
Symbol
Test Conditions
VDSS
TJ = 25C to 150C
Maximum Ratings
650
V
VDGR
TJ = 25C to 150C, RGS = 1M
650
V
VGSS
Continuous
30
V
VGSM
Transient
40
V
ID25
TC = 25C
4
A
IDM
TC = 25C, Pulse Width Limited by TJM
16
A
IA
TC = 25C
4
A
EAS
TC = 25C
250
mJ
dv/dt
IS  IDM, VDD  VDSS, TJ  150°C
50
V/ns
PD
TC = 25C
32
W
-55 ... +150
C
TJM
150
C
Tstg
-55 ... +150
C
300
260
°C
°C
1.13 / 10
Nm/lb.in
2.5
g
TJ
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque
Weight
G
DS
G = Gate
S = Source
D = Drain
Features





International Standard Package
Plastic Overmolded Tab
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages



High Power Density
Easy to Mount
Space Savings
Applications
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
650
VGS(th)
VDS = VGS, ID = 250μA
3.0
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 4A, Note 1

V
5.0
V
100 nA
TJ = 125C
© 2015 IXYS CORPORATION, All Rights Reserved




Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
10 A
150 A
550 m
DS100668(6/15)
IXTP8N65X2M
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max
gfs
VDS = 10V, ID = 4A, Note 1
4.8
RGi
Gate Input Resistance
Ciss
Coss
8.0
S
6

800
pF
495
pF
2.2
pF
43
129
pF
pF
24
ns
28
ns
53
ns
24
ns
12.0
nC
3.1
nC
4.4
nC
VGS = 0V, VDS = 25V, f = 1MHz
Crss
OVERMOLDED TO-220
(IXTP...M)
1
2
3
Effective Output Capacitance
Co(er)
Co(tr)
Energy related
td(on)
Resistive Switching Times
tr
td(off)
tf
Time related
VGS = 0V
VDS = 0.8 • VDSS
VGS = 10V, VDS = 0.5 • VDSS, ID = 4A
RG = 30 (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 4A
Qgd
Terminals:
1 - Gate
2 - Drain
3 - Source
3.9 C/W
RthJC
RthCS
C/W
0.50
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Characteristic Values
Min.
Typ.
Max
8
A
Repetitive, pulse Width Limited by TJM
32
A
VSD
IF = IS, VGS = 0V, Note 1
1.4
V
trr
QRM
IRM
IF = 4A, -di/dt = 100A/μs
200
1.65
16.3
VR = 100V
ns
μC
A
Note 1. Pulse test, t  300s, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXTP8N65X2M
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
18
8
VGS = 10V
8V
7
14
6
6V
7V
12
5
I D - Amperes
I D - Amperes
VGS = 10V
8V
16
7V
4
3
10
8
6
2
6V
4
1
5V
2
0
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
4
8
VDS - Volts
16
20
24
28
32
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 4A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
4.0
8
VGS = 10V
7V
7
3.0
RDS(on) - Normalized
6V
5
4
3
VGS = 10V
3.5
6
I D - Amperes
12
5V
I D = 8A
2.5
2.0
I D = 4A
1.5
1.0
2
0.5
1
4V
0.0
0
0
1
2
3
4
5
6
7
8
9
-50
10
0
25
50
75
100
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 4A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
4.5
125
150
4.5
VGS = 10V
4.0
4.0
TJ = 125ºC
3.5
3.5
3.0
3.0
I D - Amperes
R DS(on) - Normalized
-25
VDS - Volts
2.5
TJ = 25ºC
2.0
2.5
2.0
1.5
1.5
1.0
1.0
0.5
0.0
0.5
0
2
4
6
8
10
12
I D - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
14
16
18
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
IXTP8N65X2M
Fig. 7. Input Admittance
Fig. 8. Transconductance
10
14
TJ = - 40ºC
9
12
8
10
g f s - Siemens
I D - Amperes
7
6
5
TJ = 125ºC
25ºC
4
- 40ºC
3
25ºC
8
125ºC
6
4
2
2
1
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
6.5
1
2
3
4
VGS - Volts
5
6
7
8
9
10
11
I D - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
10
25
20
8
15
6
VGS - Volts
I S - Amperes
VDS = 325V
10
I D = 4A
I G = 10mA
4
TJ = 125ºC
TJ = 25ºC
5
2
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
2
4
6
8
10
12
QG - NanoCoulombs
VSD - Volts
Fig. 11. Capacitance
Fig. 12. Output Capacitance Stored Energy
10000
9
1000
7
100
E OSS - MicroJoules
Capacitance - PicoFarads
8
Ciss
Coss
10
Crss
1
6
5
4
3
2
1
f = 1 MHz
0.1
0
1
10
100
1000
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0
100
200
300
VDS - Volts
400
500
600
IXTP8N65X2M
Fig. 14. Maximum Transient Thermal Impedance
Fig. 13. Forward-Bias Safe Operating Area
10
100
1ms
RDS(on) Limit
10
100ms
25µs
1s
Z (th)JC - ºC / W
I D - Amperes
DC
100µs
10ms
1
1
0.1
0.1
TJ = 150ºC
TC = 25ºC
Single Pulse
0.01
1
10
100
VDS - Volts
© 2015 IXYS CORPORATION, All Rights Reserved
1,000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width - Seconds
IXYS REF: T_8N65X2(X2-R2T5) 6-16-15-A