Advanced Technical Information IXTQ 24N55Q Power MOSFETs Q-Class VDSS = 550 V = 24 A ID25 RDS(on) = 0.27 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 550 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 550 V VGS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 24 A IDM TC = 25°C, pulse width limited by TJM 96 A IAR TC = 25°C 24 A EAR TC = 25°C 30 mJ 1.5 J 10 V/ns 400 W z IXYS advanced low Qg process -55 to +150 °C z TJM 150 °C Tstg -55 to +150 °C Low gate charge and capacitances - easier to drive - faster switching z 300 °C International standard packages z Low RDS (on) 1.13/10 Nm/lb.in. z EAS dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight Symbol 6 Test Conditions g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA 550 VGS(th) VDS = VGS, ID = 250 µA 2.5 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) V 4.5 V ±100 nA TJ = 25°C TJ = 125°C 25 1 µA mA VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 0.27 Ω © 2003 IXYS All rights reserved TO-3P (IXTQ) G D (TAB) S G = Gate D = Drain S = Source TAB = Drain Features Rated for unclamped Inductive load switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Advantages z Easy to mount z Space savings z High power density DS99079(08/03) IXTQ 24N55Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 0.5 • ID25, pulse test 14 19 S 3000 pF 300 pF Crss 100 pF td(on) 16 ns 20 ns 46 ns tf 11 ns Qg(on) 80 nC 20 nC 35 nC Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG Qgs = 2.0 Ω (External), VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.31 0.25 RthCK Source-Drain Diode TO-3P Outline K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 24 A ISM Repetitive; pulse width limited by TJM 96 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = IS, -di/dt = 100 A/µs, VR = 100 V 500 ns IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343