Preliminary Technical Information IXXH75N60C3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE(sat) tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.3V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms 150 75 300 A A A IA EAS TC = 25°C TC = 25°C 30 500 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5Ω Clamped Inductive Load ICM = 150 @VCE ≤ VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 22Ω, Non Repetitive 10 μs PC TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g Weight Tab E C = Collector Tab = Collector Features z z 750 C G = Gate E = Emitter z TJ TJM Tstg TL TSOLD G z z Optimized for 20-60kHz Switching Square RBSOA Avalanche Capability Short Circuit Capability International Standard Package Advantages z z z z High Power Density 175°C Rated Extremely Rugged Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC = 60A, VGE = 15V, Note 1 TJ = 150°C © 2012 IXYS CORPORATION, All Rights Reserved z z V 5.5 V 25 μA 2 mA TJ = 150°C IGES z 1.85 2.30 ±100 nA 2.30 V V z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100329A(11/12) IXXH75N60C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 20 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 75A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 60A, VGE = 15V VCE = 400V, RG = 5Ω Note 2 Inductive load, TJ = 150°C IC = 60A, VGE = 15V VCE = 400V, RG = 5Ω Note 2 RthJC RthCS Notes: TO-247 (IXXH) Outline 33 S 3300 195 63 pF pF pF 107 28 46 nC nC nC 35 75 1.60 90 75 0.80 ns ns mJ ns ns mJ 130 1.40 33 72 2.50 105 80 1.07 ns ns mJ ns ns mJ 0.21 0.20 °C/W °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXH75N60C3 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 300 VGE = 15V 14V 13V 140 250 12V 100 80 11V 60 10V 40 14V 200 IC - Amperes IC - Amperes 120 VGE = 15V 13V 150 12V 100 11V 9V 10V 50 20 9V 8V 7V 0 0 1 2 3 7V 0 0 4 5 10 15 20 25 30 VCE - Volts VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 2.2 VGE = 15V 14V 13V 140 120 I 1.8 VCE(sat) - Normalized 12V IC - Amperes VGE = 15V 2.0 100 11V 80 60 10V 40 1 2 3 4 1.4 I 1.2 C = 75A 1.0 I 6V 0 1.6 0.6 8V 0 = 150A 0.8 9V 20 C C = 37.5A 0.4 -50 5 -25 0 25 VCE - Volts 50 75 100 125 150 175 11 12 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 120 8 TJ = 25ºC 7 100 80 I C IC - Amperes VCE - Volts 6 = 150A 5 4 60 TJ = 150ºC 25ºC 40 3 - 40ºC 75A 20 2 37.5A 0 1 9 10 11 12 13 VGE - Volts © 2012 IXYS CORPORATION, All Rights Reserved 14 15 4 5 6 7 8 VGE - Volts 9 10 IXXH75N60C3 Fig. 7. Transconductance Fig. 8. Gate Charge 50 16 TJ = - 40ºC, 25ºC, 150ºC VCE = 300V 14 I C = 75A 40 I G = 10mA 30 VGE - Volts g f s - Siemens 12 20 10 8 6 4 10 2 0 0 0 20 40 60 80 100 0 120 10 20 30 40 50 60 70 80 90 100 110 QG - NanoCoulombs IC - Amperes Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 160 10,000 Cies 120 1,000 IC - Amperes Capacitance - PicoFarads 140 Coes 100 80 60 100 40 Cres 20 f = 1 MHz 0 100 10 0 5 10 15 20 VCE - Volts 25 30 35 40 TJ = 150ºC RG = 5Ω dv / dt < 10V / ns 200 300 Fig. 11. Maximum Transient Thermal Impedance 400 500 600 VCE - Volts 1 Fig. 11. Maximum Transient Thermal Impedance aasss 0.4 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXXH75N60C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 4 --- VCE = 400V 3 8 1.4 6 2 5 I C = 80A Eoff Eon ---TJ = 150ºC VCE = 400V 1 2.5 0.8 2 TJ = 25ºC 0.6 1.5 4 1 3 0.4 1 2 0.2 0.5 1 0 I C = 40A 0 5 10 15 20 25 30 35 40 45 50 0 20 55 25 30 35 40 RG - Ohms Eon ---- RG = 5Ω , VGE = 15V 140 4 130 I C = 80A 1.0 2.5 0.8 2 0.6 1.5 I C = 40A 0.4 1 0.2 75 100 td(off) - - - - 400 I td(off) - - - - 300 90 250 80 I 200 = 80A 150 60 100 50 10 15 20 25 30 35 40 45 50 55 110 TJ = 150ºC 70 90 TJ = 25ºC 50 70 60 65 IC - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 70 75 80 td(on) - - - - 130 RG = 5Ω , VGE = 15V I C = 40A 90 120 85 110 80 100 I 75 C = 80A 70 90 80 65 25 50 75 100 TJ - Degrees Centigrade 125 70 150 t d(off) - Nanoseconds 90 140 tfi VCE = 400V t d(off) - Nanoseconds 130 55 C 70 95 110 50 350 100 150 VCE = 400V 45 = 40A 100 t f i - Nanoseconds tfi 40 C Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature RG = 5Ω , VGE = 15V 35 450 110 5 170 30 80 RG - Ohms 150 25 75 VCE = 400V Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 20 70 50 0.5 150 125 tfi TJ - Degrees Centigrade 130 65 500 120 E on - MilliJoules 3 50 60 TJ = 150ºC, VGE = 15V 3.5 1.2 25 55 t d(off) - Nanoseconds VCE = 400V 1.4 4.5 t f i - Nanoseconds Eoff 50 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 1.8 1.6 45 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature t f i - Nanoseconds 3 1.5 0.5 E off - MilliJoules 3.5 RG = 5Ω , VGE = 15V Eon - MilliJoules 2.5 4 1.2 7 Eon - MilliJoules Eoff - MilliJoules Eon - TJ = 150ºC , VGE = 15V 1.6 Eoff - MilliJoules Eoff 3.5 9 IXXH75N60C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 240 120 120 100 tri t r i - Nanoseconds C = 80A 120 80 I C = 40A 25 30 35 40 45 TJ = 150ºC 60 33 40 20 29 20 0 40 20 35 31 60 0 80 40 80 15 37 TJ = 25ºC 27 20 50 t d(on) - Nanoseconds 100 I t d(on) - Nanoseconds 160 10 td(on) - - - - RG = 5Ω , VGE = 15V VCE = 400V VCE = 400V 5 39 td(on) - - - - TJ = 150ºC, VGE = 15V t r i - Nanoseconds tri 200 140 25 30 35 40 45 50 55 60 65 70 75 80 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 180 44 tri 160 42 VCE = 400V 140 40 I 120 C = 80A 38 100 36 80 34 60 32 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 5Ω , VGE = 15V I C = 40A 40 30 20 25 50 75 100 125 28 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_75N60C3(71)05-03-11