IXYH120N65B3 - IXYS Corporation

Advance Technical Information
XPTTM 650V IGBT
GenX3TM
IXYH120N65B3
VCES =
IC110 =
VCE(sat) 
tfi(typ) =
Extreme Light Punch Through
IGBT for 10-30kHz Switching
650V
120A
1.90V
107ns
TO-247
Symbol
Test Conditions
VCES
VCGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Maximum Ratings
650
650
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
ILRMS
IC110
ICM
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
TC = 25°C, 1ms
340
160
120
760
A
A
A
A
G = Gate
E = Emitter
IA
EAS
TC = 25°C
TC = 25°C
60
1
A
J
Features
SSOA
(RBSOA)
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
ICM = 240
VCE  VCES
A
tsc
(SCSOA)
VGE = 15V, VCE = 400V, TJ = 150°C
RG = 82, Non Repetitive
8
μs
PC
TC = 25°C
1360
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
1.13/10
Nm/lb.in
6
g
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque






TJ
TJM
Tstg
TL
TSOLD
G
Weight



BVCES
IC
= 250A, VGE = 0V
650
VGE(th)
IC
= 250A, VCE = VGE
3.5
ICES
VCE = VCES, VGE = 0V
6.0
VCE = 0V, VGE = 20V
VCE(sat)
IC
= 100A, VGE = 15V, Note 1
TJ = 150C
© 2015 IXYS CORPORATION, All Rights Reserved

V
Optimized for 10-30kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
International Standard Package
High Power Density
Low Gate Drive Requirement



Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
25 A
1 mA
TJ = 150C
IGES

V
C
= Collector
Tab = Collector
Applications

Characteristic Values
Min.
Typ.
Max.
Tab
E
Advantages

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
C
100
1.55
1.77
1.90
nA
V
V
DS100662(4/15)
IXYH120N65B3
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
35
Cies
Coes
Cres
Qg(on)
Qge
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
IC = 60A, VCE = 10V, Note 1
Inductive load, TJ = 25°C
IC = 50A, VGE = 15V
VCE = 400V, RG = 2
Note 2
Inductive load, TJ = 150°C
IC = 50A, VGE = 15V
VCE = 400V, RG = 2
Note 2
S
nC
52
nC
110
nC
30
28
1.34
168
107
1.50
ns
ns
mJ
ns
ns
mJ
30
30
2.60
226
196
2.20
ns
ns
mJ
ns
ns
mJ
0.21
0.11 °C/W
°C/W
B
E
Q
pF
pF
pF
250
IC = 120A, VGE = 15V, VCE = 0.5 • VCES
RthJC
RthCS
Notes:
58
6900
393
146
VCE = 25V, VGE = 0V, f = 1MHz
TO-247 (IXYH) Outline
D
A
A2
R
S
0P
A
0K M D B M
D2
D1
D
0P1
R1
1
2
3
4
IXYS OPTION
L1
C
L
A1
c
b
b2
b4
e
J MCAM
E1
1 - Gate
2,4 - Collector
3 - Emitter
1. Pulse test, t  300μs, duty cycle, d  2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYH120N65B3
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
240
350
VGE = 15V
VGE = 15V
13V
12V
200
11V
11V
250
160
10V
I C - Amperes
I C - Amperes
12V
300
120
9V
80
200
10V
150
9V
100
40
8V
50
0
7V
0
8V
7V
0
0.5
1
1.5
2
2.5
3
3.5
0
2
4
6
240
2.0
VGE = 15V
13V
12V
11V
12
14
VGE = 15V
VCE(sat) - Normalized
1.8
10V
160
I C - Amperes
10
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
200
8
VCE - Volts
VCE - Volts
120
9V
80
I C = 240A
1.6
1.4
1.2
I C = 120A
1.0
8V
40
0.8
I C = 60A
7V
0.6
0
0
0.5
1
1.5
2
2.5
3
3.5
-50
4
-25
0
VCE - Volts
4.5
140
I C - Amperes
VCE - Volts
125
150
175
180
160
4.0
I C = 240A
3.0
120
TJ = 150ºC
25ºC
100
- 40ºC
80
60
120A
2.0
100
Fig. 6. Input Admittance
5.0
2.5
75
200
TJ = 25ºC
5.5
3.5
50
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
6.0
25
40
60A
1.5
20
1.0
0
8
9
10
11
12
VGE - Volts
© 2015 IXYS CORPORATION, All Rights Reserved
13
14
15
4
5
6
7
VGE - Volts
8
9
10
IXYH120N65B3
Fig. 7. Transconductance
Fig. 8. Gate Charge
120
16
TJ = - 40ºC
100
VCE = 325V
12
I G = 10mA
I C = 120A
25ºC
80
150ºC
VGE - Volts
g f s - Siemens
14
60
40
10
8
6
4
20
2
0
0
0
20
40
60
80
100
120
140
160
180
200
220
0
50
I C - Amperes
Fig. 9. Capacitance
150
200
250
Fig. 10. Reverse-Bias Safe Operating Area
280
10,000
240
Cies
200
I C - Amperes
Capacitance - PicoFarads
100
QG - NanoCoulombs
1,000
Coes
160
120
80
TJ = 150ºC
40
Cres
f = 1 MHz
0
1100
100
0
5
10
15
20
25
30
35
40
RG = 2Ω
dv / dt < 10V / ns
200
300
400
500
600
700
VCE - Volts
VCE - Volts
Fig. 12. Maximum Trasient thermal Impedance
Fig. 11. Forward-Bias Safe Operating Area
aaa
0.2
1000
VCE(sat) Limit
0.1
I D - Amperes
100µs
10
1ms
1
TJ = 175ºC
0.01
10ms
100ms
TC = 25ºC
Single Pulse
0.1
1
Z (th)JC - ºC / W
25µs
100
10
100
1000
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
IXYH120N65B3
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
Eoff
5.0
10
---
Eoff
4.5
TJ = 150ºC , VGE = 15V
5
VCE = 400V
8
I C = 100A
3
4
I C = 50A
2
5
TJ = 150ºC
3.0
2.5
3
2.0
2
TJ = 25ºC
8
10
12
1
1.0
0
6
4
2
1
4
6
3.5
1.5
2
50
14
55
60
65
70
RG - Ohms
Eoff
4.5
Eon
----
8
tfi
7
90
95
0
100
5
3.0
4
2.5
I C = 50A
3
td(off) - - - 500
VCE = 400V
190
400
I C = 50A
170
300
2
I C = 100A
150
1.5
600
t d(off) - Nanoseconds
3.5
6
t f i - Nanoseconds
I C = 100A
Eon - MilliJoules
Eoff - MilliJoules
85
TJ = 150ºC, VGE = 15V
210
VCE = 400V
2.0
200
1
1.0
25
50
75
100
130
0
150
125
100
2
4
6
8
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
220
tfi
200
td(off) - - - -
VCE = 400V
tfi
260
190
180
100
160
TJ = 25ºC
80
140
60
55
60
65
70
75
80
85
I C - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
90
95
120
100
t f i - Nanoseconds
120
220
170
200
I C = 50A
150
180
I C = 100A
130
160
110
140
90
25
50
75
100
TJ - Degrees Centigrade
125
120
150
t d(off) - Nanoseconds
200
240
VCE = 400V
t d(off) - Nanoseconds
220
140
50
14
td(off) - - - -
RG = 2Ω , VGE = 15V
240
TJ = 150ºC
160
12
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
210
280
RG = 2Ω , VGE = 15V
180
10
RG - Ohms
TJ - Degrees Centigrade
t f i - Nanoseconds
80
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
230
RG = 2Ω , VGE = 15V
4.0
75
I C - Amperes
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
5.0
7
E on - MilliJoules
6
----
VCE = 400V
4.0
4
Eon
8
RG = 2Ω , VGE = 15V
E on - MilliJoules
Eoff - MilliJoules
Eon -
E off - MilliJoules
6
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
IXYH120N65B3
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
180
tri
160
td(on) - - - -
100
100
90
90
TJ = 150ºC, VGE = 15V
80
70
100
60
I C = 100A
80
50
60
40
I C = 50A
40
0
2
4
6
80
30
20
8
10
12
tri
VCE = 400V
50
31
40
10
20
14
30
29
50
55
60
65
70
75
80
85
90
95
28
100
40
38
34
60
32
40
30
I C = 50A
28
0
50
32
TJ = 25ºC
30
80
25
33
60
20
36
I C = 100A
20
70
t d(on) - Nanoseconds
t r i - Nanoseconds
td(on) - - - -
RG = 2Ω , VGE = 15V
100
34
VCE = 400V
I C - Amperes
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
120
35
TJ = 150ºC
RG - Ohms
140
td(on) - - - -
t d(on) - Nanoseconds
120
t r i - Nanoseconds
VCE = 400V
tri
36
RG = 2Ω , VGE = 15V
t d(on) - Nanoseconds
t r i - Nanoseconds
140
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
75
100
125
26
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_120N65B3(8D-Y42) 4-23-15