PolarHVTM Power MOSFET

PolarHVTM
Power MOSFET
IXTA 6N50P
IXTP 6N50P
VDSS = 500 V
ID25
=
6 A
RDS(on) ≤ 1.1 Ω
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
500
500
V
V
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25° C
TC = 25° C, pulse width limited by TJM
6
15
A
A
IAR
EAR
EAS
TC = 25° C
TC = 25° C
TC = 25° C
6
20
250
A
mJ
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 18 Ω
10
V/ns
PD
TC = 25° C
100
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
TJ
TJM
Tstg
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Md
Mounting torque
Weight
TO-220
TO-263
(TO-220)
1.13/10 Nm/lb.in.
4
3
g
g
TO-263 (IXTA)
G
(TAB)
TO-220 (IXTP)
G
VGS = 0 V, ID = 250 µA
500
VGS(th)
VDS = VGS, ID = 50µA
3.0
IGSS
VGS = ±30 V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
TJ = 125° C
V
5.0
V
±100
nA
5
50
µA
µA
1.1
Ω
(TAB)
D = Drain
TAB = Drain
Features
l
l
Characteristic Values
Min. Typ.
Max.
BVDSS
D S
G = Gate
S = Source
l
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
S
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
l
l
Easy to mount
Space savings
High power density
DS99447E(04/06)
IXTA 6N50P
IXTP 6N50P
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 20 V; ID = 0.5 ID25, pulse test
3.5
5.5
S
740
pF
85
pF
Crss
8
pF
td(on)
26
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
28
ns
td(off)
RG = 18 Ω (External)
65
ns
26
ns
14.6
nC
4.8
nC
5.6
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCS
TO-263 (IXTA) Outline
1.25° C/W
(TO-220)
Source-Drain Diode
° C/W
0.25
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
6
A
ISM
Repetitive
18
A
VSD
IF = IS, VGS = 0 V, -di/dt = 100 A/µs
1.5
V
trr
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
400
TO-220 (IXTP) Outline
ns
Pins: 1 - Gate
3 - Source
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
2 - Drain
4 - Drain
IXTA 6N50P
IXTP 6N50P
Fig. 1. Output Characte ris tics
Fig. 2. Exte nde d Output Characte ris tics
@ 25º C
@ 25º C
6
14
V GS = 10V
V GS = 10V
5
8V
10
4
3
I D - Amperes
I D - Amperes
12
7V
6V
2
1
7V
8
6
6V
4
2
5V
5V
0
0
1
2
3
4
5
6
0
7
0
V D S - V olts
Fig. 3. Output Characte ris tics
6
9
12
15
18
V D S - V olts
21
24
27
30
Fig. 4. RDS(on ) Norm alize d to 0.5 ID25
V alue vs . Junction Te m pe ratur e
@ 125º C
6
2.6
V GS = 10V
2.4
7V
V GS = 10V
2.2
R D S ( o n ) - Normalized
5
I D - Amperes
3
4
6V
3
2
5V
1
2
1.8
I D = 6A
1.6
1.4
I D = 3A
1.2
1
0.8
0.6
0
0.4
0
2
4
6
8
10
12
14
-50
-25
V D S - V olts
100
125
150
6
TJ = 125 º C
2.4
5
2.2
I D - Amperes
R D S ( o n ) - Normalized
75
7
V GS = 10V
2.6
50
Fig. 6. Dr ain Curr e nt vs . Cas e
Te m pe r ature
0.5 ID25 V alue vs . ID
2.8
25
TJ - Degrees Centigrade
Fig. 5. RDS(on) Nor m alize d to
3
0
2
1.8
1.6
1.4
3
2
TJ = 25 º C
1.2
4
1
1
0.8
0
0
2
4
6
8
I D - A mperes
© 2006 IXYS All rights reserved
10
12
14
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXTA 6N50P
IXTP 6N50P
Fig. 8. Tr ans conductance
Fig. 7. Input Adm ittance
8
10
7
9
8
- Siemens
5
4
3
2
25 º C
6
125 º C
5
25 º C
fs
TJ = 125 º C
TJ = -40 º C
7
4
-40 º C
g
I D - Amperes
6
3
2
1
1
0
0
4
4.5
5
5.5
6
0
6.5
1
2
3
V G S - V olts
Fig. 9. Source Cur r e nt vs .
Sour ce -To-Dr ain V oltage
10
16
9
V DS = 250V
8
I D = 3A
7
I G = 10m A
14
12
V G S - Volts
I S - Amperes
5
10
8
TJ = 125 º C
7
8
12
14
16
6
5
4
3
TJ = 25 º C
4
2
2
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
0
2
4
V S D - V olts
6
Q
G
8
10
- nanoCoulombs
Fig. 12. For w ar d-Bias
Safe Ope r ating Ar e a
Fig. 11. Capacitance
10000
100
T J = 150 º C
f = 1MH z
T C = 25 º C
R DS(on) Lim it
1000
I D - Amperes
Capacitance - picoFarads
6
Fig. 10. Gate Char ge
18
6
4
I D - A mperes
C iss
100
C oss
10
25µs
100µs
1m s
1
DC
10
10m s
C rss
1
0.1
0
5
10
15
20
25
30
35
40
V D S - V olts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V D S - V olts
1000
IXTA 6N50P
IXTP 6N50P
Fig. 13. Maxim um Transient Therm al Resistance
R ( t h ) J C - ºC / W
10.00
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
Pulse Width - milliseconds
© 2006 IXYS All rights reserved
0.1
1
10