DSP45-12AZ Standard Rectifier VRRM = 2x 1200 V I FAV = 45 A VF = 1.23 V Phase leg Part number DSP45-12AZ Backside: anode/cathode 1 4 3 Features / Advantages: Applications: Package: TO-268AA (D3Pak-HV) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130215a DSP45-12AZ Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 1300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 V IR reverse current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case typ. VR = 1200 V TVJ = 25°C 40 µA VR = 1200 V TVJ = 150°C 1.5 mA TVJ = 25°C 1.26 V 1.57 V 1.23 V IF = forward voltage drop min. 45 A IF = 90 A IF = 45 A IF = 90 A TVJ = 150 °C TC = 130°C 1.66 V T VJ = 175 °C 45 A TVJ = 175 °C 0.81 V 180° sine for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 9.1 mΩ 0.55 K/W K/W 0.15 TC = 25°C 270 W t = 10 ms; (50 Hz), sine TVJ = 45°C 480 A t = 8,3 ms; (60 Hz), sine VR = 0 V 520 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 410 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 440 t = 10 ms; (50 Hz), sine TVJ = 45°C 1.15 kA²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 1.13 kA²s TVJ = 150 °C 840 A²s 805 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 18 pF 20130215a DSP45-12AZ Package Ratings TO-268AA (D3Pak-HV) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 70 Unit A -40 175 °C -40 150 °C 150 °C Weight FC 4 20 mounting force with clip d Spp/App d Spb/Apb creepage distance on surface | striking distance through air g 120 N terminal to terminal 9.4 mm terminal to backside 5.6 mm Product Marking Logo IXYS Part No. Assembly Line Zyyww Assembly Code abcd Date Code Ordering Standard Part Number DSP45-12AZ Similar Part DSP45-16AZ DSP45-12A DSP45-16A DSP45-16AR DSP45-18A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSP45-12AZ Package TO-268AA (D3Pak) (2HV) TO-247AD (3) TO-247AD (3) ISOPLUS247 (3) TO-247AD (3) * on die level Delivery Mode Tube Code No. 514134 Voltage class 1600 1200 1600 1600 1800 T VJ = 175 °C Rectifier V 0 max threshold voltage 0.81 V R 0 max slope resistance * 6.5 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20130215a DSP45-12AZ Outlines TO-268AA (D3Pak-HV) Dim. A A1 A2 b C C2 D D1 D2 D3 E E1 e H L L2 L3 L4 1 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 4 Millimeter min max 4.90 5.10 2.70 2.90 0.02 0.25 1.15 1.45 0.40 0.65 1.45 1.60 13.80 14.00 11.80 12.10 7.50 7.80 2.90 3.20 15.85 16.05 13.30 13.60 5.450 BSC 18.70 19.10 1.70 2.00 1.00 1.15 0.250 BSC 3.80 4.10 Inches min max 0.193 0.201 0.106 0.114 0.001 0.010 0.045 0.057 0.016 0.026 0.057 0.063 0.543 0.551 0.465 0.476 0.295 0.307 0.114 0.126 0.624 0.632 0.524 0.535 0.215 BSC 0.736 0.752 0.067 0.079 0.039 0.045 0.010 BSC 0.150 0.161 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20130215a DSP45-12AZ Rectifier 400 80 1200 VR = 0 V 50 Hz, 80% VRRM 70 1000 360 60 50 IF 600 [A2s] 280 30 TVJ = 45°C I2t IFSM 40 [A] 800 TVJ = 45°C 320 [A] TVJ = 150°C 400 20 240 TVJ = 150°C 125°C 25°C 10 0 0.5 1.0 200 TVJ = 150°C 200 0.001 1.5 0 0.01 V F [V ] 0.1 1 1 2 t [s] 4 5 6 7 8 910 2 Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode 3 t [ms] Fig. 3 I t versus time per diode 80 80 RthJA: 0.6 KW 0.8 KW 1 KW 2 KW 4 KW 8 KW DC = 1 0.5 0.4 0.33 0.17 0.08 60 Ptot 40 60 IdAVM 40 DC = 1 0.5 0.4 0.33 0.17 0.08 [A] [W] 20 20 0 0 0 10 20 30 40 50 0 IdAVM [A] 50 100 150 200 0 50 Tamb [°C] 100 150 200 TC [°C] Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs. case temperature 0.6 0.5 0.4 Zth 0.3 [K/W] i 0.2 1 2 0.1 3 4 0.0 1 10 100 1000 Ri 0.033 0.095 ti 0.0006 0.0039 0.164 0.258 0.033 0.272 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130215a