Si photodiode S7686 Photodiode with sensitivity close to spectral luminous efficiency S7686 is a Si photodiode having a spectral response characteristic that is more similar to the human eye sensitivity (spectral luminous efficiency) than our conventional visible-compensated sensors (S1133, etc.). Features Applications Spectral response analogous to CIE spectral luminous efficiency Spectral response range: 480 to 660 nm Peak sensitivity wavelength: 550 nm Illuminometer Luminance meter Ceramic package for reliability Active area: 2.4 × 2.8 mm High-speed response: 0.5 μs (VR=0 V, RL=1 kΩ) fs value: 8 % Typ. (vertical light input) Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature Storage temperature Symbol Condition VR Max. Topr No condensation Tstg No condensation Value 10 -10 to +60 -20 to +70 Unit V °C °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Short circuit current Dark current Rise time Terminal capacitance Symbol λ λp S Isc ID tr Ct Condition λ=λp 100 lx, 2856 K VR=1 V VR=0 V, RL=1 kΩ VR=0 V, f=10 kHz Min. - www.hamamatsu.com Typ. 480 to 660 550 0.38 0.45 2 0.5 200 Max. 20 - Unit nm nm A/W μA pA μs pF 1 Si photodiode S7686 Spectral response Spectral response (relative value) (Typ. Ta=25 °C) 0.6 (Typ. Ta=25 °C) 100 S7686 90 QE=100 % 80 Relative sensitivity (%) Photosensitivity (A/W) 0.5 0.4 0.3 0.2 0.1 70 60 50 40 30 CIE luminous spectral efficiency 20 10 0 200 400 600 800 1000 0 300 1200 400 500 600 700 800 900 Wavelength (nm) Wavelength (nm) KSPDB0133EC KSPDB0092EC Linearity Dark current vs. reverse voltage (Typ. Ta=25 °C, VR=0 V, 2856 K) 10-3 10-4 100 pA Dark current Short circuit current (A) (Typ. Ta=25 °C) 1 nA 10-5 10-6 10-7 10 pA 1 pA 100 fA 10-8 1 10 100 1000 10000 10000 10 fA 0.01 0.1 1 10 Reverse voltage (V) Illuminance (lx) KSPDB0341EA KSPDB0144EA 2 Si photodiode S7686 Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) Terminal capacitance 10 nF 1 nF 100 pF 10 pF 0.1 1 10 Reverse voltage (V) KSPDB0145EA Directivity 10° (Typ. Ta=25 °C) 20° Cathode terminal mark 30° 30° +0 8.0 - 0.25 40° 50° 60° 60° 70° 60 40 20 0 20 40 60 80 90° 100 Photosensitive surface X direction Filter Relative sensitivity (%) KSPDB0339EA 9±1 80 80° 0.1 Y direction 80° 0.6 70° 90° 100 Active area 2.8 × 2.4 50° X direction 6.0 - 0.3 40° Y direction 0° 1.5 ± 0.2 10° +0.1 20° Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.15) 0.45 Lead 5.0 ± 0.2 KSPDA0089EB 3 Si photodiode S7686 Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Surface mount type products / Precautions Technical information ∙ Si photodiode / Application circuit examples Information described in this material is current as of February, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KSPD1040E04 Feb. 2014 DN 4