PHOTODIODE Si PIN S5980, S5981, S5870 l l l l l l l S5980: 5 × 5 mm S5981: 10 × 10 mm S5870: 10 × 10 mm : 1.26 mmt : 0.72 A/W (λ=960 nm) ■ S5980 A S5981 S5870 30 10.0/4 5.0/4 µm mm 10.0/2 ■ S5980 S5981 30 -40 +100 -40 +125 VR Max. Topr Tstg (Ta=25 °C, 1 ■ λ λp S ID TCID fc Ct NEP ) S5980: S5981, S5870: S5870 V °C °C ) S5980 Typ. Max. 320 1100 960 0.72 λ=λp VR=10 V 0.3 2 1.15 V R = 10 V, R L =50 Ω, -3 d B 25 VR=10 V, f=1 MHz 10 VR=10 V, λ=λp 1.4 × 10-14 100 50 S5981 Typ. Max. 320 1100 960 0.72 0.6 4 1.15 20 35 1.9 × 10-14 - S5870 Typ. Max. 320 1100 960 0.72 2 10 1.15 10 50 3.5 × 10-14 - nm nm A/W nA /°C MHz pF W/Hz1/2 ● ● 260 °C 5 ● ● 3 24 150 °C 3 5 120 °C 12 15 1 S5980, S5981, S5870 Si PIN ■ ■ ■ (Typ. Ta=25 ˚C) 0.8 (Typ. ) +1.5 (Typ. Ta=25 ˚C) 10 nA 0.7 S5870 1 nA +1.0 S5981 (%/˚C) (A/W) 0.6 0.5 0.4 100 pA +0.5 S5980 0.3 0.2 10 pA 0 0.1 200 400 600 800 -0.5 190 1000 400 (nm) 600 800 1 pA 0.01 1000 10 100 (V) KMPDB0123JA ■ ■ KMPDB0124JA ( : mm) (Typ. Ta=25 ˚C, f=1 MHz) S5981 1 (nm) KMPDB0122JA 1 nF 0.1 S5980 S5870 10 pF a d b c 0.03 10.6 ± 0.2 (4 ×) R0.3 5.0 8.8 ± 0.2 100 pF S5980 0.46 1.26 ± 0.15 2.5 100 fF 0.1 1 10 0.03 1.5 1 pF 100 (V) b NC KMPDB0125JA NC 1.5 c d NC NC NC (10 ×) 0.6 1.27 a 0.3 mm MAX. KMPDA0036JB S5981 S5870 14.5 ± 0.2 14.5 ± 0.2 (4 ×) R0.3 a NC a 3.0 3.0 b NC NC b c d (10 ×) 1.2 NC NC NC 2.54 2.54 a 0.3 mm MAX. NC NC NC NC NC NC 0.3 mm MAX. KMPDA0037JA 2 1.8 1.8 (10 ×) 1.2 b 0.03 1.26 ± 0.15 1.8 0.46 1.26 ± 0.15 0.03 10.0 c 16.5 ± 0.2 b 0.03 d 10.0 a 1.8 0.46 16.5 ± 0.2 (4 ×) R0.3 KMPDA0113JA Si PIN 980-0011 300-2635 105-0001 430-8587 541-0052 1-6-112 5-9-2 3-8-21335 325-64 2-3-1310 435-8558TEL (053) 434-3311 S5980, S5981, S5870 TEL (022) 267-0121 TEL (029) 847-3821 TEL (03) 3436-0491 TEL (053) 459-1112 TEL (06) 6271-0441 FAX (022) 267-0135 FAX (029) 847-8654 FAX (03) 3433-6997 FAX (053) 459-1114 FAX (06) 6271-0450 Cat. No. KPIN1012J03 FAX (053) 434-5184 Feb. 2011 DN jp.hamamatsu.com 3