CMOS linear image sensor S12443 Pixel size: 7 × 125 μm, 2496 pixels, small package The S12443 is a CMOS linear image sensor with a compact yet 2496-pixel long photosensitive area (effective photosensitive area length: 17.472 mm). The pixel size is 7 × 125 μm. Features Applications Pixel size: 7 × 125 μm Barcode readers 2496 pixels Position detection Effective photosensitive area length: 17.472 mm Image reading 3.3 V single power supply operation Encoders Built-in timing generator allows operation with only start and clock pulse inputs. Video data rate: 10 MHz max. Small input terminal capacitance: 5 pF Structure Parameter Number of pixels Pixel pitch Pixel height Photosensitive area length Package Seal material Specification 2496 7 125 17.472 Glass epoxy Silicone resin Unit μm μm mm - Absolute maximum ratings Parameter Supply voltage Clock pulse voltage Start pulse voltage Operating temperature*1 Storage temperature*1 Reflow soldering conditions*2 Symbol Vdd V(CLK) V(ST) Topr Tstg Tsol Note: Exceeding the absolute maximum ratings within the absolute maximum ratings. *1: No condensation *2: JEDEC level 2a Condition Ta=25 °C Ta=25 °C Ta=25 °C Value Unit -0.3 to +6 V -0.3 to +6 V -0.3 to +6 V -40 to +85 °C -40 to +85 °C Peak temperature 260 °C, 3 times (see P.9) even momentarily may cause a drop in product quality. Always be sure to the product www.hamamatsu.com 1 CMOS linear image sensor S12443 Recommended terminal voltage (Ta=25 °C) Parameter Symbol Vdd Supply voltage Clock pulse voltage Start pulse voltage High level Low level High level Low level V(CLK) V(ST) Min. 3.15 3 0 3 0 Typ. 3.3 Vdd Vdd - Max. 3.45 Vdd + 0.25 0.3 Vdd + 0.25 0.3 Unit Typ. 5 5 Max. - Unit pF pF Max. 10 M 260 30 Unit Hz Hz Ω mA V V V V V Input terminal capacitance (Ta=25 °C, Vdd=3.3 V) Parameter Clock pulse input terminal capacitance Start pulse input terminal capacitance Symbol C(CLK) C(ST) Min. - Electrical characterisitics [Ta=25 °C, Vdd=3.3 V, V(CLK)=V(ST)=3.3 V] Parameter Symbol Min. Typ. Clock pulse frequency f(CLK) 200 k 5M Video data rate VR f(CLK) Output impedance Zo 70 Current consumption*3 *4 I 14 21 *3: f(CLK)=10 MHz *4: Current consumption increases as the clock pulse frequency increases. The current consumption is 8 mA typ. at f(CLK)=200 kHz. Electrical and optical characterisitics [Ta=25 °C, Vdd=3.3 V, V(CLK)=V(ST)=3.3V, f(CLK)=10 MHz] Parameter Symbol Unit Min. Typ. Max. Spectral response range λ 400 to 1000 nm Peak sensitivity wavelength λp 700 nm Photosensitivity*5 R 500 V/(lx·s) Conversion efficiency*6 CE 25 μV/eDark output voltage*7 *8 Vd 0 0.4 4.0 mV Saturation output voltage*8 Vsat 1.5 2.0 2.8 V Readout noise Nr 0.9 1.2 2.0 mV rms Dynamic range 1*9 DR1 1666 times Dynamic range 2*10 DR2 5000 times Output offset voltage Vo 0.4 0.7 1.0 V Photoresponse nonuniformity*5 *11 PRNU ±10 % Image lag*12 IL 0.1 % *5: Measured with a tungsten lamp of 2856 K *6: Output voltage generated per one electron *7: Integration time=10 ms *8: Difference from Vo *9: DR1 = Vsat/Nr *10: DR2 = Vsat/Vd Integration time=10 ms Dark output voltage is proportional to the integration time and so the shorter the integration time, the wider the dynamic range. *11: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 2490 pixels excluding 3 pixels each at both ends, and is defined as follows: PRNU= ΔX/X × 100 (%) X: average output of all pixels, ΔX: difference between X and maximum output or minimum output *12: Signal components of the preceding line data that still remain even after the data is read out in a saturation output state. Image lag increases when the output exceeds the saturation output voltage. 2 CMOS linear image sensor S12443 Appearance inspection standards Parameter Foreign matter on photosensitive area Test criterion 10 μm max. Inspection method Automated camera Spectral response (typical example) (Ta=25 °C) 100 Relative sensitivity (%) 80 60 40 20 0 400 500 600 700 800 900 1000 Wavelength (nm) KMPDB0369EA Block diagram Shift register Trig 12 CLK 2 ST 14 Timing generator 9 EOS Hold circuit 8 Video Amp array Bias generator Photodiode array 1 7 Vdd 3 6 Vss 13 Vcp KMPDC0419EB 3 CMOS linear image sensor S12443 Output waveforms of one pixel The timing for acquiring the video signal is synchronized with the rising edge of Trig pulse (See red arrow below.). f(CLK)=VR=10 MHz CLK 5 V/div. GND Trig 5 V/div. GND 2.7 V (saturation output voltage=2 V) Video 0.7 V (output offset voltage) 1 V/div. GND 20 ns/div. f(CLK)=VR=1 MHz CLK 5 V/div. GND Trig GND 5 V/div. 2.7 V (saturation output voltage=2 V) Video 1 V/div. 0.7 V (output offset voltage) GND 200 ns/div. 4 CMOS linear image sensor S12443 Timing chart 1 2 3 4 34 35 36 48 49 50 CLK Integration time tlp(ST) ST thp(ST) tpi(ST) 48 clocks 2496 1 2496 Video 1 50 Trig EOS tr(CLK) tf(CLK) CLK 1/f(CLK) ST tr(ST) tf(ST) thp(ST) tlp(ST) tpi(ST) KMPDC0420EB Parameter Symbol Unit Min. Typ. Max. Start pulse cycle*13 tpi(ST) 70/f(CLK) s Start pulse high period*13 *14 thp(ST) 6/f(CLK) s Start pulse low period tlp(ST) 64/f(CLK) s Start pulse rise and fall times tr(ST), tf(ST) 0 10 30 ns Clock pulse duty ratio 45 50 55 % Clock pulse rise and fall times tr(CLK), tf(CLK) 0 10 30 ns *13: Dark output increases if the start pulse cycle or the start pulse high period is lengthened. *14: The integration time equals the high period of ST plus 34 CLK cycles. The shift register starts operation at the rising edge of CLK immediately after ST goes low. The integration time can be changed by changing the ratio of the high and low periods of ST. If the first Trig pulse after ST goes low is counted as the first pulse, the Video signal is acquired at the rising edge of the 50th Trig pulse. 5 CMOS linear image sensor S12443 Operation example This example assumes that the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the integration time is maximized. Clock pulse frequency = Video data rate = 10 MHz Start pulse cycle = 2548/f(CLK) = 2548/10 MHz = 254.8 μs High period of start pulse = Start pulse cycle - Start pulse’s low period min. = 2548/f(CLK) - 64/f(CLK) = 2548/10 MHz - 64/10 MHz = 248.4 μs Integration time is equal to the high period of start pulse + 34 cycles of clock pulses, so it will be 248.4 + 3.4 = 251.8 μs. thp(ST)=248.4 μs tlp(ST)=6.4 μs ST tpi(ST)=254.8 μs KMPDC0421EC Dimensional outline (unit: mm) Photosensitive area 17.472 × 0.125 22.9 2.7 8.2 ± 0.2 1 ch 2496 ch Direction of scan Photosensitive surface 0.972 ± 0.2*3 [Top view] Silicone resin 1.6 ± 0.3 1.3 ± 0.15*2 Glass epoxy 0.3 ± 0.15*1 [Side view] 20.32 2.54 2.54 5.08 1.27 [Bottom view] Index mark Electrode (14 ×) ϕ0.5 Tolerance unless otherwise noted: ±0.1 *1: Distance from package surface to photosensitive surface *2: Distance from package bottom to photosensitive surface *3: Distance from package side surface to center of photosensitive KMPDA0295EF 6 CMOS linear image sensor S12443 Pin connections Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Symbol Vdd CLK Vss NC NC Vss Vdd Video EOS NC NC Trig Vcp ST I/O I I I O O O I I Description Supply voltage Clock pulse GND No connection No connection GND Supply voltage Video signal End of scan No connection No connection Trigger pulse Bias voltage for booster circuit*15 Start pulse *15: Voltage of approx. 5.5 V, which was boosted by the chip's internal booster circuit, appears at the terminal. To maintain the voltage, insert a capacitor of about 1 μF between GND and Vcp. Recommended land pattern (unit: mm) 20.32 15.24 10.16 2.54 (14 ×) ϕ0.7 5.08 1.27 2.54 KMPDC0495EA Application circuit example +3.3 V +3.3 V 0.1 μF 0.1 μF + 22 μF/25 V + +3.3 V 22 μF/25 V 0.1 μF + 22 μF/25 V ST 82 Ω CLK 82 Ω 74HC541 +3.3 V 22 μF/25 V + 1 Vdd ST 14 2 CLK Vcp 13 3 Vss Trig 12 4 NC NC 11 5 NC NC 10 6 Vss EOS 9 7 Vdd Video 8 1 μF Trig EOS 74HC541 +5 V 0.1 μF S12443 0.1 μF + 22 μF/25 V + - 100 Ω LT1818 51 Ω Video 22 pF 0.1 μF 22 μF/25 V + -5 V KMPDC0422EB 7 CMOS linear image sensor S12443 Standard packing specifications Reel (conforms to JEITA ET-7200) Dimensions 330 mm Hub diameter 100 mm Tape width 32 mm Material Plastic*16 Electrostatic characteristics Conductive *16: Compound of polyacetylene, polypyrrole, polythiophene and polyaniline Embossed (unit: mm, material: plastic*16, conductive) 1.75 ± 0.1 8.0 ± 0.1 0.3 2.0 ± 0.1 4.0 ± 0.1 +0.1 ϕ1.5 -0 23.2 ± 0.1 14.2 ± 0.1 28.4 ± 0.1 32.0 ± 0.3 Circle holes 1.9 ± 0.1 3.0 ± 0.1 Reel feed derection 0.2 ± 0.05 Enlongated circle holes +0.1 ϕ1.5 -0 /2 KMPDC0493EA Packing quantity 1000 pcs/reel Packing specifications may vary on orders less than 1000 pieces. Packing type Reel and desiccant in moisture-proof packing (vaccum-sealed) 8 CMOS linear image sensor S12443 Recommended temperature profile for reflow soldering (typical example) 300 °C Peak temperature 260 °C max. Peak temperature - 5 °C 30 s max. Cooling 6 °C/s max. Heating 3 °C/s max. Temperature 217 °C 200 °C 150 °C Preheating 60 to 120 s Soldering 60 to 150 s 25 °C to peak temperature 8 m max. Time KMPDB0405EA ∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 4 weeks. ∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before actual reflow soldering, check for any problems by tesitng out the reflow soldering methods in advance. Precautions (1) Electrostatic countermeasures · This device has a built-in protection circuit as a safeguard against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools. · Protect this device from surge voltages which might be caused by peripheral equipment. (2) Package handling · The photosensitive area of this device is sealed and protected by transparent resin. When compared to a glass faceplate, the surface of transparent resin may be less uniform and is more likely to be scratched. Be very careful when handling this device and also when designing the optical systems. · Dust or grime on the light input window might cause nonuniform sensitivity. To remove dust or grime, blow it off with compressed air. (3) Surface protective tape · Protective tape is affixed to the surface of this product to protect the photosensitive area. After assembling the product, remove the tape before use. 9 CMOS linear image sensor S12443 Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ ∙ ∙ ∙ Notice Image sensor / Precautions Surface mount type products / Precautions Resin-sealed CMOS linear image sensors / Precautions Information described in this material is current as of July, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1137E04 Jul. 2014 DN 10