IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region. The S11519 series provides significantly higher sensitivity to YAG laser light (1.06 μm) compared to our conventional product (S8890 series). The S11519 series is a low bias operation type with enhanced sensitivity in the near infrared region. Compared to the conventional product S8890 series, the S11519 series has improved various characteristics such as breakdown voltage, dark current, and cut-off frequency. Features Applications High sensitivity in the near infrared region YAG laser monitor High gain Long wavelength light detection Stable operation at low bias General ratings / absolute maximum ratings Absolute maximum ratings Type no. Window material*1 Package K K TO-5 TO-8 S11519-10 S11519-30 Active area size*2 Operating temperature Topr Storage temperature Tstg (°C) (°C) -20 to +85 -55 to +125 (mm) φ1.0 φ3.0 *1: K=borosilicate glass *2: Area in which a typical gain can be obtained Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type no. S11519-10 S11519-30 Spectral response range λ Peak sensitivity wavelength*3 λp (nm) (nm) Breakdown voltage VBR ID=100 μA Typ. Max. (V) (V) 600 to 1150 960 350 Temp. coefficient of VBR ID=100 μA 500 (V/°C) 1.7 Dark current*3 ID Typ. (nA) 3 9 Max. (nA) 30 90 Cut-off Terminal frequency*3 capacitance*3 fc Ct RL=50 Ω (pF) 2.0 12.0 (MHz) 400 230 Excess Gain noise M figure*3 x λ=890 nm λ=890 nm 0.3 100 *3: Values measured at a gain listed in the characteristics table www.hamamatsu.com 1 Si APD S11519 series Spectral response (Typ. Ta=25 °C, M=100) 80 Photo sensitivity (A/W) 70 60 50 S11519 series 40 30 Conventional products S8890 series 20 10 0 400 600 800 1000 1200 Wavelength (nm) KAPDB0182EA Spectral response (quantum efficiency) (Typ. Ta=25 °C, M=1) 100 Quantum efficiency (%) 80 60 S11519 series 40 Conventional products S8890 series 20 0 400 600 800 1000 1200 Wavelength (nm) KAPDB0189EA 2 Si APD S11519 series Gain vs. reverse voltage Dark current vs. reverse voltage (Typ.) 4 10 0 °C 3 (Typ. Ta=25 °C) 1 µA 20 °C 100 nA 10 S11519-30 102 Dark current Gain -20 °C 40 °C 10 nA 1 nA 60 °C 101 100 pA S11519-10 100 100 200 300 400 10 pA 100 200 300 400 Reverse voltage (V) Reverse voltage (V) KAPDB0185EA KAPDB0190EA Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C, f=100 kHz) Terminal capacitance 1 nF 100 pF S11519-30 10 pF S11519-10 1 pF 100 fF 0 100 200 300 400 Reverse voltage (V) KAPDB0191EA 3 Si APD S11519 series Dimensional outlines (unit: mm) S11519-10 S11519-30 9.1 ± 0.2 13.9 ± 0.2 8.1 ± 0.1 12.35 ± 0.1 5.9 ± 0.1 10.5 ± 0.1 Y Y X X Active area 1.0 4.2 ± 0.2 Active area 3.0 0.45 Lead 5.08 ± 0.2 4.9 ± 0.2 7.5 ± 0.2 Chip position accuracy with respect to the cap center X, Y ≤ ±0.3 1.5 max. (15) (2.5) 0.5 max. 0.45 Lead Photosensitive surface (20) 0.4 max. (2.5) Photosensitive surface Index mark 1.4 The glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. KPINA0024EA 1.0 max. Case Chip position accuracy with respect to the cap center X, Y ≤ ±0.4 The glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. KPINA0025EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed in the specification sheets or supplied as samples may have a suffix “(X)” which means tentative specifications or a suffix “(Z)” which means developmental specifications. ©2010 Hamamatsu Photonics K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KAPD1028E01 Jul. 2010 DN 4