Inverted Emission Microscope series -MP -TP -TD -SD Features Options Multi-camera platform with high-precision stage NanoLens for high-resolution and high-sensitivity observation Flexible system design Using a NanoLens allows to increase the numerical aperture (N. A.) and significantly improves both resolution and light collection efficiency. This shortens detection time yet delivers high-resolution. Multiple detectors suitable for observing low voltage operating IC IR-OBIRCH analysis function Variety of lens selection from 1× to 100× (Optional 10-lens turret available.) The highly popular IR-OBIRCH (Infrared Optical Beam Induced Resistance CHange) analysis function can be added as an option to detect line defects such as leakage or IDDQ defects. Backside observation prober available for measurements from an entire 300 mm wafer to a single die Use of digital lock-in kit enhances the IR-OBIRCH analysis detection functions Simplified tester head docking for dynamic analysis Digital lock-in by the software ensures a clear and sharp image compared to analog lock-in even by short image acquisition times. User friendly operation system Dynamic analysis function by laser radiation Easily upgradable for future application Irradiates a device with a laser beam and observes the status change (Pass/Fail) in device operation to analyze functional defects. High-resolution pattern image by confocal microscope Sequence software This function enables automatic measurement of Emission/IR-OBIRCH observation by following the procedure set by a user. Emission/IR-OBIRCH images can be sequentially measured and saved when connected to a semi-automatic prober. Measurements under the condition with an LSI tester or an external power source are possible as well. EO probing unit C12323 The EO Probing Unit is a tool to observe a transistor's status through the Si substrate using an incoherent light source. 2 Inverted Emission Microscope Series Product Lineup Lineup Inverted Emission Microscope -MP New versatile platform with specially designed high NA macro lens for backside analysis The new platform integrating 1K InGaAs Camera C8250-35 provides a macro emission image of the highest sensitivity. It is possible to integrate multiple detectors for near IR to thermal observation and 2 laser ports for laser based measurements such as OBIRCH, DALS, laser probing etc. Various measurements can be done without changing device set-up. Direct docking with LSI tester for functional failure is also possible. Inverted Emission Microscope -TP High-precision backside prober for 300 mm wafers with multiple platforms Equipped with a backside emission prober (BEP) made for 300 mm wafers by Cascade Microtech. Rapid and accurate multiple pins probing or micro-probing on a wafer enables highly efficient analysis from the backside of a wafer. Its multiple platforms and a full line of options including several laser application options and wafer automatic measurement software offer a wide range of backside analysis. A maximum of 3 detectors can be installed in one unit. Inverted Emission Microscope -TD Tester direct docking type with multiple platforms A maximum of 3 cameras and 2 lasers can be selected and installed. Direct docking with an advanced function tester or cable docking using a manipulator or probe card is selectable. A simple stage for 300 mm wafers is available. A flexible system structure including a laser application option allows you to perform a variety of backside analysis while using many types of detectors. Inverted Emission Microscope -SD Compact and mobile tester direct docking type The compact design with 80 cm height enables easy docking with different types of testers. A high-sensitivity InGaAs camera and a variety of laser options enlarge the range of dynamic analysis. 3 Inverted Emission Microscope 5AHEAI C-CCD camera C4880-59 IR confocal laser scan microscope The cooled CCD camera is a basic emission detector available for the PHEMOS series. High resolution and low readout noise provide high contrast and clear images. Although its main strength is for frontside detection, its sensitivity extends into the 1100 nm nearinfrared range, making it useful for backside observations as well. SI-CCD camera C11231-02 The SI-CCD camera detects low-light emissions from minute patterns in LSI devices with both high sensitivity and high position accuracy, which slashes detection time by 90% compared to ordinary cooled CCD cameras. Real time readout during emission image acquisition enables monitoring the emission state during the integration time. < Standard function > Dual scan: Obtain a pattern image and an IR-OBIRCH image simultaneously Flexible scan: Normal scan (1024 × 1024, 512 × 512), Zoom, Slit scan, Area scan, Line scan, Point scan, Scan direction changeable (0°,45°,90°,180°,270°) Reflected images and OBIRCH images are obtained, and then both images are superimposed. InGaAs camera C8250 series When device design becomes smaller and driving voltage is lowered, a detector that has high sensitivity in the near-infrared range is indispensable. The C8250 series cameras are highly sensitive in the near-infrared range from 900 nm to 1550 nm, making them suitable for low-voltage drive IC chips and backside faint emission analysis. Scan speed (second/image) 512 × 512 1 2 4 8 1024 × 1024 2 4 8 16 • Laser* 1.3 μm Laser diode Output: 100 mW 1.3 μm High power laser (option) Output: 400 mW or more Features 1.1 μm Laser diode (option) Output: 200 mW (CW), 800 mW (pulse) High-sensitivity (high quantum efficiency) in the infrared region Powerful tool for low-voltage drive IC chips and backside observation through silicon High resolution and highly sensitive analysis possible when combined with a laser confocal microscope Peltier cooling systems are maintenance free (without LN2). The hermetic vacuum shield camera; C8250-27 is maintenance free from periodic re-evacuation. * For 1.3 μm laser, one of two laser can be integrated. A comparative chart of wavelength sensitivity ranges 100 Hot carrier emission region Quantum efficiency (%) 90 80 70 InGaAs 60 50 C-CCD 40 SI-CCD 30 20 10 0 400 600 800 1000 1200 1400 1600 1800 Wavelength (nm) NIR camera lineup C8250-25 C8250-27 C8250-35 Model Liquid nitrogen cooling Peltier cooling Liquid nitrogen cooling Cooling type iPHEMOS series Corresponding product iPHEMOS series iPHEMOS series (TP, TD) (MP, TP, TD) -120 ˚C or less -70 ˚C -183 ˚C or less Cooling temperature 900 nm to 1550 nm Spectral sensitivity Effective number of pixels 4 The IR confocal laser scan microscope obtains clear, high-contrast pattern images by scanning the backside of a chip with the infrared laser. Within 1 second a pattern image can be acquired. By the flexible scan in 4 directions, it is possible to scan a device from different directions without rotating it. Scanning in parallel with a metal line makes OBIRCH image clearer. The function is also useful in OBIRCH analysis using a digital lock-in and dynamic analysis by laser stimulation. 640 (H) × 512 (V) Field of view 100× 128 μm × 102.4 μm Maximum field of view 1× A/D converter 12.8 mm × 10.2 mm 12 bit 1000 (H) × 1000 (V) 133 μm × 133 μm 180 μm × 180 μm(MP) 13.3 mm × 13.3 mm • Optical stage travel range* X 50 mm Y 50 mm Z 20 mm (MP) / 30 mm (TP, TD, SD) * These values may become smaller due to interference with the prober used, the sample stage and the NanoLens option. NanoLens (solid immersion lens) C9710 For backside observation, nearinfrared light is used to penetrate the Si layer. On the other hand, optical resolution gets worse at longer wavelengths. The NanoLens (a solid immersion lens) is a hemispherical lens that touches the Si substrate and utilizes the index of refraction of silicon to increase the numerical aperture, which improves spatial resolution and convergence efficiency. By setting the NanoLens on a point to observe on the backside of a device, it is possible to perform analysis at a sub-micron level of spatial resolution in a short period of time with greatly improved accuracy. 3 types of SIL lens cap are available in order to correspond to Si thickness from 70um to 800um. Laser spot Laser spot Small N.A. Pattern side Total reflection Back side Large N.A. Pattern side Si Si Back side Emissions Laser light collection NanoLens Objective lens Objective lens Standard lens principles NanoLens principles IR -OBIRCH analysis A8755 IR-OBIRCH (Infrared Optical Beam Induced Resistance CHange) analysis detects current alteration caused by leakage current paths and contact area resistance failure in devices by irradiating an infrared laser. PRINCIPLE OF OBIRCH ANALYSIS Laser : = 1.3 μm Laser (frontside) Leakage Current Path I A1 or or Heated A1 I R/V)I2 ( Digital lock-in kit M10383 The M10383 digital lock-in kit is a new function added to the OBIRCH analysis, in order to boost detection sensitivity by sampling one pixel into multiple data using lock-in processing. The M10383 allows acquiring a sharp and clear image in a short acquisition time compared to the A9188-01 lock-in kit which uses an analog processing method. Analog lock-in (5 kHz, 72 s) Digital lock-in (5 kHz, 52 s) I V Si-sub. T, TCR Laser (backside) *Depends on defects and materials R×I V= I : Current before laser irradiation V : Applied voltage Defects in Metal Line I : Current change due to laser irradiation (when constant voltage is applied) V : Voltage change due to laser irradiation (when constant current is applied) OBIRCH signal R : Resistance increase with the temperature increase due to laser irradiation T : Temperature increase due to laser irradiation TCR : Temperature coefficient of resistance ● High-resolution, high-contrast reflection pattern images ● Backside observation capable (using a 1.3 μm wavelength laser) ● Non-OBIC signal generated in the semiconductor field by Si material since using an infrared laser Fixed voltage mode, fixed current mode, and high-sensitivity current mode (fixed current mode) are selectable via software. The A8755 also uses a new OBIRCH amp. It has 10× better detectability than before. Fixed voltage mode Fixed current mode High-sensitivity current mode Applied voltage range -10 V to +10 V -10 V to +10 V -25 V to +25 V Max. current 100 mA 100 mA 100 μA Detectability 1 nA*1 1 μV*2 3 pA*1 Integrate noise cancellation function < by improving noise caused by external equipment > Current detection head Standard type*1 High voltage type (optional) Applicable voltage Max. 250 V 3 kV Applicable current 6.3 A (Max. 10 A) 30 mA(90 VA) 10 nA*2 Detectability Dynamic analysis by laser stimulation kit (DALS) A9771 with noise cancel Possible to measure at 4 quadrant voltage/current New OBIRCH amp. can work for devices, which need to apply negative voltage/current. The new amp is also effective to detect reverse current flowed differently from design. Sink Analysis using the current detection head A current detection head can be used to measure devices that require higher voltage or higher current than the range of standard OBIRCH amp (10 V/100 mA or 25 V/100 μA). *1 The standard type head is included in M10383 Digital Lock-in kit. *2 Minimum detectable pulse signal input into an OBIRCH amp. Detectability can differ by device set-up environment. *1 Minimum detectable pulse signal input into the amplifier *2 Calculated value without noise cancel Comparing analog lock-in with digital lock-in (short scan period) Due to high integration and increased performance of LSI, functional failure analysis under LSI tester connection becomes very important. Dynamic analysis by laser stimulation (DALS) is a new method to analyze device operation conditions by means of laser radiation. Stimulate a device with a 1.3 μm laser while operating it with test patterns by LSI tester. Then device operation status (pass/fail) changes due to heat generated by the laser. The pass/fail signal change is expressed as an image that indicates the point causing timing delay, marginal defect, etc. Analysis done by driving an LSI under conditions at the boundary * The Pass/Fail status changes as a reaction to the laser stimulation Source +25 V Positive voltage/Positive current Positive voltage/Negative current +10 V -100 mA -100 μA +100 μA +100 mA Image formation -10 V Negative voltage/Negative current Pass/Fail status Negative voltage/Positive current -25 V Source Sink Analysis possible range Pass/Fail map corresponding to laser scan LSI tester Failure location Status changes due to laser heat Change in status in reaction to the laser = failure location Concept of the analysis of a failed device by utilizing the "drive voltage – operating frequency" characteristics 5 Inverted Emission Microscope Series Overview of functions EO Probing Unit C12323 The EO Probing Unit is a tool to observe a transistor's status through the Si substrate using an incoherent light source. It is composed of the EOP (Electro Optical Probing) to measure operation voltage of a transistor rapidly and the EOFM (Electro Optical Frequency Mapping) to image active transistors at a specific frequency. With a NanoLens, high resolution and sensitivity can be obtained. Gate Source Drain Features ● High quality pattern image with no interference fringe ● No sample damage by incoherent light source ● Low power light source and high sensitive detector provides stable and accurate measurement. ● EOP waveform with high S/N ratio in 2 seconds ● Easy-to-use software identical to the PHEMOS interface ● EOFM phase image provides intuitive interpretation of signal propagation. ● Possible to get 2 different frequency data simultaneously. ● Retrofit on PHEMOS, uAMOS, iPHEMOS, THEMOS in the field is possible. Depletion layer Incoherent light source EOP Function This function acquires switching timing of a specific transistor rapidly by high speed sampling. As an extended analysis of emission and OBIRCH, the EOP function improves accuracy of failure point localization, enabling a much smoother followup physical analysis. Detector EOFM image Phase image EOP principle When the drain voltage of a FET varies by switching operation, the electric field distribution at a drain boundary also changes. This induces a change of refractive index due to the electro-optical effect of each material. When irradiating a drain by a light beam through the Si substrate, the intensity of reflected light varies corresponding to the voltage level. The EOP is a newly developed method that can observe the reflected light which expresses the status of a transistor. EOP waveform EOFM Function This function measures transistors switching at a specific frequency and images them. The reflected light from a drain has the power spectrum distribution. The EOFM picks up the intensity of signal under certain frequency from the distribution and visualize it as an image. By operating transistors in a specific region under certain frequency, it is possible to observe if the circuits are correctly switching or not. 4 images can be acquired simultaneously. Pattern image Amplitude image Detector Light source Incoherent light source (Patent pending) Light source output Maximum 10 mW (Variable) Light source wavelength 1.3 μm Optical sensor Photodiode Bandwidth Analog band (10 kHz to 1 GHz) EOP Measurement function Signal processing High speed digitizer Digital sampling frequency 4 GHz EOFM Measurement function 6 Signal processing Spectrum analyzer (2 ch simultaneous output) I/Q image Phase image Scan speed 0.2 seconds/line to 5.12 s/line (Lock-in) (Timing) Inverted Emission Microscope Series Connection with the FA-Navigation failure analysis support system Combining detection signals from PHEMOS and design data, and automatically extracting suspicious signal lines contributes to making the work of narrowing down the malfunction locations more effective and to reducing the time needed to clarify the route cause. Analysis is easily possible using GDS ll or LEF/DEF at both laboratory and office. (Patent pending) External connection/Specifications LSI tester head connections Cable connection Coaxial cable Connector panel Dark box CCD Camera for probe Probe card LSI Tester head Probe head Sample wafer Backside prober iPHEMOS CAD Data Failure information physical analysis information Integrated Information Wiring information logic information Optics Objective lens X axis stage Camera Failure localization supported by FA-Navigation Pattern images / Design information Acquires a superimposed the signal image and the pattern image provided by failure analysis system. Y axis stage Confocal laser microscope Z axis stage Anti-vibration table Design information overlay/Automatical signal region setting Design data (CAD data) can also be superimposed on a failure analysis image. Allows signal region parameter setting. Direct tester docking Automatic NET extraction LSI Tester head Automatically extracts the NET passing through signal regions. Ranks the NETs in order of most number of times they pass through the signal region. Flexible cable Tester interface board NET highlight display Socket board This function highlights a specified NET from among the extracted NETs. Analyzing this NET assists in identifying the failure location in a short time. DUT Objective lens Optics CAD navigation system connections Camera When performing failure analysis of complicated LSI chips on a large scale, it is possible to connect through a network (TCP/IP) and CAD navigation software. This helps the subsequent investigation of problem locations. By superimposing an area where a problem has been detected, or an image, over the layout diagram, it is possible to identify defective points. X axis stage Y axis stage Z axis stage Confocal laser microscope Anti-vibration table Dimensions / Weight iPHEMOS main unit (W) × (D) × (H) iPHEMOS-MP iPHEMOS-TP iPHEMOS-TD iPHEMOS-SD 1740 mm × 1190 mm × 1510 mm 1990 mm × 1510 mm × 2090 mm 1740 mm × 1270 mm × 1500 mm 805 mm × 915 mm × 1180 mm (775*2) Approx. 1800 kg *1 Approx. 1500 kg Approx. 1500 kg Control rack 880 × 1000 × 1775 Approx. 255 kg Approx. 200 kg (W) × (D) × (H) 1000 mm × 800 mm × 700 mm Operation desk Approx. 500 kg 880 mm × 700 mm × 1542 mm (W) × (D) × (H) Approx. 45 kg - *Weight will differ according to option configuration. *1 : Weight of iPHEMOS-TP unit includes a prober or equivalent item. *2 : Height is up to the sample edge on the iPHEMOS-SD. Utility Line voltage Power consumption Vacuum Compressed air AC 220 V (50 Hz/60 Hz) 3000 VA Approx. 80 kPa or more 0.5 MPa to 0.7 MPa 7 Inverted Emission Microscope Series Selection Selection Type Name Port for Detector For camera For laser Camera Selection C-CCD Camera: C4880-59 SI-CCD Camera: C11231-02 InGaAs Camera (LN2 cooling) : C8250-25 *1 InGaAs Camera (Peltier cooling) : C8250-27 *1 InGaAs Camera (LN2 cooling) : C8250-35 *1 InSb HR Camera : C9985-05 Laser Selection 1.3 mm Laser (100 mW) : M7635-01 1.3 mm High power laser (400 mW) : M10902-01 1.1 mm Pulse laser (200 mW CW, 800 mW pulse) : C9215-06 Laser marker : C7638 Objective Lens 5-lens turret 10-lens turret Applicable technique N.A. WD (mm) Lens Selection (up to 5 lenses selectable) OBIRCH / Photoemission 0.09 1× 15 OBIRCH / Photoemission 0.1 2.5× 28 Photoemission 0.38 1.35× 16 OBIRCH 0.03 1× : A7649-01 20 OBIRCH / Photoemission 0.055 2× : A8009 34 OBIRCH / Photoemission 0.14 NIR 5× : A11315-01 37.5 OBIRCH / Photoemission 0.4 NIR 20× : A11315-03 20 OBIRCH / Photoemission 0.42 NIR 50× : A11315-04 *2 17 OBIRCH / Photoemission 0.42 NIR 50× (Backside) : A8756-01 17.3 OBIRCH 0.76 High NA 50× : A8018 12 OBIRCH / Photoemission 0.5 NIR 100× : A11315-05 *2 12 OBIRCH / Photoemission 0.5 NIR 100× (Backside) : A8756-02 12.3 OBIRCH / Photoemission 0.7 NIR-HR 50× : A11315-06 *2 10 OBIRCH / Photoemission 0.7 NIR-HR 100× : A11315-07 10 NIR-HR 100× (Backside) : A11315-08 OBIRCH / Photoemission 0.7 6 OBIRCH / Photoemission 3.1 NanoLens Thermal Emission 0.13 MWIR 0.8× 22 Thermal Emission 0.52 MWIR 4× 25 Thermal Emission 0.71 MWIR 8× 13 Thermal Emission 2.6 Thermal NanoLens Prober Direct Docking iPHEMOS-MP iPHEMOS-TP iPHEMOS-TD iPHEMOS-SD 2 2 3 3 3 3 1 2 - - Selectable up to 3 - Selectable up to 2 Selectable up to 2 (Cannot use 2 lasers of the same wavelength) Optional Optional Optional Optional Optional Optional Optional - Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Sample stage C10434-03 Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional PA300BEP (Cascade Microtech) - Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Sample stage C10434-02 Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional Optional - Optional - Optional Optional Compact stage : standard composition : not available *1 : Select either one *2 : With glass thickness correction LASER SAFETY Hamamatsu Photonics classifies laser diodes, and provides appropriate safety measures and labels according to the classification as required for manufacturers according to IEC 60825-1. When using this product, follow all safety measures according to the IEC. CLASS 1 LASER PRODUCT Description Label (Sample) Caution Label ★ Product and software package names noted in this documentation are trademarks or registered trademarks of their respective manufacturers. • Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications and external appearance are subject to change without notice. • Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult your local sales representative. © 2014 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Systems Division 812 Joko-cho, Higashi-ku, Hamamatsu City, 431-3196, Japan, Telephone: (81)53-431-0124, Fax: (81)53-435-1574, E-mail: [email protected] U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J 08807, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH.: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-265-8 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court,10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, UK, Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6 20020 Arese (Milano), Italy, Telephone: (39)02-93581733, Fax: (39)02-93581741 E-mail: [email protected] China: Hamamatsu Photonics (China) Co., Ltd.: B1201 Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected] Cat. No. SSMS0019E17 NOV/2014 HPK Created in Japan