Si photodiode with preamp S9295 series

PHOTODIODE
Si photodiode with preamp
S9295 series
Large area photodiode integrated with op amp and TE-cooler
S9295 series is a thermoelectrically cooled Si photodiode with preamp developed for low-light-level detection. A large area photodiode, op amp,
TE-cooler and feedback resistor (10 GΩ) are integrated into a single package. A thermistor is also included in the same package for temperature
control so that the photodiode and I-V conversion circuit can be cooled for stable operation. S9295 series also features low noise and low NEP,
and is especially suitable for NOx detection. The active area of the photodiode is internally connected to the GND terminal making it highly
resistant to EMC noise.
Features
Applications
l Large active area: 10 × 10 mm
l NOx detection
l UV to NIR Si photodiode optimized for precision photometry l Low-light-level measurement, etc.
l Compact hermetic package with sapphire window
l High precision FET input operational amplifier
l High gain: Rf=10 GΩ
l Low noise and NEP
l High cooling efficiency
S9295 : ∆T=50 ˚C
S9295-01: ∆T=30 ˚C
l High stability with thermistor
l Highly resistant to EMC noise
S9295 series may be damaged by Electro Static Discharge, etc. Please see Precautions for use in the last page.
■ Absolute maximum ratings
Parameter
Supply voltage (preamp)
Operating temperature
Storage temperature
TE-cooler allowable voltage *1
TE-cooler allowable current
Thermistor power dissipation
*1: Ripple Max.: 10 %
*2: S9295-01: 3.7 V
■ Recommended operating conditions
Symbol
Value
Vcc
±20 V
Topr
-30 to +60 °C
Tstg
-40 to +80 °C
Vte
5 V *2
Ite
1A
Pth
0.2 mW
Parameter
Symbol
Supply voltage (preamp)
Vcc
TE-cooler current
Ite
Thermistor power dissipation Pth
Load resistance
RL
Value
±5 to ±15 V
0.8 A Max.
0.03 mW Max.
100 kΩ Min.
■ Electrical and optical characteristics (Typ. Vcc=±15 V, RL=1 MΩ)
Parameter
Symbol
Spectral response range
Peak sensitivity wavelength
Feedback resistance (built-in) *3
λ
λp
Rf
Photo sensitivity
S
Condition
S9295
T= -25 °C
S9295-01
T= -5 °C
190 to 1100
960
10
λ=200 nm
λ=λp
D ark state, f=10 Hz
λ=λp, f=10 Hz
Dark state
-3 dB
0.9
5.1
20
4
±2
190
Output noise voltage
Vn
Noise equivalent power
NEP
Output offset voltage
Vos
Cut-off frequency
fc
Output voltage swing
Vo
Supply current
Icc
Dark state
Thermistor resistance
Rth
86
*3: Custom devices are available with different Rf values and/or internal Cf, etc.
Unit
nm
nm
GΩ
0.9
5.1
25
5
±2
180
13
0.3
30
V/nW
µVrms/Hz1/2
fW/Hz1/2
mV
Hz
V
mA
kΩ
1
Si photodiode with preamp
■ Spectral response
S9295 series
■ Frequency response
(Typ. Vcc=±15 V)
6
(Typ. Vcc=±15 V)
10
S9295
(T= -25 ˚C)
5
Relative output (dB)
Photo sensitivity (V/nW)
0
4
3
S9295 (T= -25 ˚C)
S9295-01 (T= -5 ˚C)
2
-10
-20
S9295-01
(T= -5 ˚C)
-30
10
100
1
0
200
400
600
800
1000
Wavelength (nm)
1000
10000
Frequency (Hz)
KSPDB0228EA
KSPDB0229EA
■ NEP vs. frequency
(Typ. Vcc=±15 V)
3
NEP (fW/Hz1/2)
S9295-01
(T= -5 ˚C)
10
2
S9295
(T= -25 ˚C)
101
10
(Typ. Vcc=±15 V)
-3
10
Output noise voltage (Vrms/Hz1/2)
10
■ Output noise voltage vs. frequency
0
S9295-01
(T= -5 ˚C)
-4
10
S9295
(T= -25 ˚C)
10
-5
-6
10
-7
1
10
100
1000
10
10000
1
10
Frequency (Hz)
100
1000
10000
Frequency (Hz)
KSPDB0230EB
KSPDB0231EA
■ Element temperature vs. TE-cooler current
S9295
S9295-01
5
20
Vte vs. Ite
4
10
T vs. Ite
0
3
-10
2
-20
-30
0
0.2
0.4
0.6
0.8
6
5
T vs. Ite
10
4
Vte vs. Ite
0
3
-10
2
1
-20
1
0
1.0
-30
TE-cooler current Ite (A)
0
0.2
0.4
0.6
0.8
0
1.0
TE-cooler current Ite (A)
KSPDB0151EB
2
(Typ. Ta=25 ˚C)
TE-cooler voltage Vte (V)
30
Element temperature T (˚C)
Element temperature T (˚C)
20
6
TE-cooler voltage Vte (V)
(Typ. Ta=25 ˚C)
30
KSPDB0172EB
Si photodiode with preamp
■ External connection
S9295 series
■ Thermistor resistance vs. temperature
TE-cooler
+
(Typ.)
120
Vcc +
Package
Rf=10 GΩ
Thermistor
TE-cooler
S9295: Two-stage
S9295-01: One-stage
Out
Photodiode
+
GND
Case
Thermistor resistance (kΩ)
100
80
60
40
20
Vcc-
0
-30
NC
-20
-10
0
10
20
30
KSPDC0047EA
Temperature (˚C)
KSPDB0152EA
■ Dimensional outlines (unit: mm)
S9295
34.0 ± 0.2
24.3 ± 0.2
24.3 ± 0.2
Window
16.0 ± 0.2
Window
16.0 ± 0.2
Active area
4
(2 ×)
4
KSPDA0071EC
7.0 ± 0.3
(4.7)
7.6 ± 0.3
17.8 ± 0.3
Index mark
Index mark
0.9 ± 0.2
Photosensitive
surface
1.0
Lead
7.6 ± 0.3
Sapphire
window (t=0.5)
19 ± 1
6.0
Photosensitive
surface
1.0
Lead
0.9 ± 0.2
Sapphire
window (t=0.5)
19 ± 1
13.5 ± 0.3
27.4 ± 0.3
27.4 ± 0.3
(2 ×)
42.0 ± 0.4
34.0 ± 0.2
17.8 ± 0.3
Active area
S9295-01
42.0 ± 0.4
KSPDA0079EB
A tantalum or ceramic capacitor of 0.1 to 10 µF must be connected to the supply voltage leads (pins ➃ and ➉) as a bypass
capacitor used to prevent the device from oscillation.
3
Si photodiode with preamp
S9295 series
Precautions for use
■ ESD
S9295 series may be damaged or their performance may deteriorate by such factors as electro static discharge from the
human body, surge voltage from measurement equipment, leakage voltages from soldering irons and packing materials. As a
countermeasure against electro static discharge, the device, operator, work place and measuring jigs must all be set at the
same potential. The following precautions must be observed during use:
,
•To protect the device from electro static discharge which accumulate on the operator or the operator s clothes, use a wrist
,
strap or similar tools to ground the operator s body via a high impedance resistor (1 MΩ).
•A semiconductive sheet (1 MΩ to 10 MΩ) should be laid on both the work table and the floor in the work area.
•When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10 MΩ.
•For containers and packing, use of a conductive material or aluminum foil is effective. When using an antistatic material, use
one with a resistance of 0.1 MΩ/cm2 to 1 GΩ/cm2.
■ Strength
Thermoelectrically-cooler devices may be damaged if subjected to shock, for example drop impact. Take sufficient care
when handling these devices.
■ Lead forming
When forming the leads, take care not to apply excessive force to the lead sealing glass. Excessive force may impair the
hermetic sealing, possibly degrading the cooling capacity.
To form the leads, hold the roots of the leads securely with a pair of pliers and bend them.
■ Heatsink
Use a heatsink with thermal resistance less than 1.3 °C/W. Apply thermal grease between the heatsink and detector
package, and then fasten them with the screws. Be careful not to give any excessive force or mechanical stress to the
detector package at this point.
■ Wiring
• Be careful not to misconnect the plus and minus leads of the thermoelectric cooler or preamplifier. Supplying a voltage or
current while these connections are reversed may damage the device.
• The feedback resistor integrated into S9295 series is high so it is susceptible to external noise. Always ground the case
terminal when using S9295.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. ©2010 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
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Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4
Cat. No. KSPD1064E02
Jul. 2010 DN