Si PIN photodiode S3759 Si PIN photodiode for visible to infrared photometry S3759 is a Si PIN photodiode developed to detect and measure infrared energy emitted from YAG lasers (1.06 μm). Compared to standard Si photodiodes, S3759 delivers exceptionally high sensitivity of 0.38 A/W at 1.06 μm. The PIN structure allows high-speed response and low capacitance. The active area is as large as ϕ5 mm, making optical axis alignment easier. Features Applications High sensitivity in infrared region: 0.38 A/W (λ=1.06 μm) YAG laser detection High-speed response: tr=12.5 ns (VR=100 V) Analytical equipment, etc Low capacitance: Ct=10 pF (VR=100 V) Large active area: ϕ5 mm High reliability: TO-8 metal package Absolute maximum ratings Parameter Maximum reverse voltage Operating temperature Storage temperature Symbol VR max Topr Tstg Value 150 -40 to +100 -55 to +125 Unit V °C °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Short circuit current Dark current Symbol λ Condition λp S Isc ID Rise time tr Terminal capacitance Ct λ=1060 nm 2856 K, 1000 lx VR=100 V λ=1060 nm, VR=100 V, RL=50 Ω VR=100 V, f=1 MHz Min. - Typ. 360 to 1120 Max. - Unit nm - 980 - nm 0.3 14 - 0.38 19 1 10 A/W μA nA - 12.5 - ns - 10 - pF www.hamamatsu.com 1 Si PIN photodiode S3759 Spectral response Response waveform (Typ. Ta=25 °C) 0.8 100% [Typ. Ta=25 ˚C, λ=1060 nm (YAG laser), VR=100 V, RL=50 Ω] Photo sensitivitY (A/W) 0.7 0.6 0.5 50% 0.4 0.3 0.2 0.1 0 200 400 600 800 1000 1200 12.5 ns KPINB0280EC Wavelength (nm) KPINB0279EA Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) Dark current 1 nA 100 pA 10 pA 0.01 0.1 1 10 100 Reverse voltage (V) (Typ. Ta=25 °C) 1 nF Terminal capacitance 10 nA 100 pF 10 pF 1 pF 0.1 1 10 100 Reverse voltage (V) KPINB0281EA KPINB0282EA 2 Si PIN photodiode S3759 Dimensional outline (unit: mm) ϕ13.9 ± 0.2 ϕ12.35 ± 0.1 ϕ10.5 ± 0.1 Active area ϕ5.0 ϕ0.45 Lead 5.0 ± 0.2 (15) 0.5 max. (2.8) Photosensitive surface ϕ7.5 ± 0.2 Index mark ϕ1.4 ϕ1.0 max. Case Chip position accuracy with respect to the cap center X, Y≤±0.4 KPINA0092EA 3 Si PIN photodiode S3759 Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Metal, ceramic, plastic packages / Precautions Technical information ∙ Si photodiode / Application circuit examples Information described in this material is current as of March, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIN1066E02 Mar. 2014 DN 4