Selection guide - March 2015 InGaAs Photodiodes Near infrared detectors with low noise and superb frequency characteristics HAMAMATSU PHOTONICS K.K. InGaAs Photodiodes Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and developed advanced InGaAs photodiodes that feature high speed, high sensitivity, and low noise over a spectral range from 0.5 μm to 2.6 μm. InGaAs photodiodes are used in a wide variety of applications ranging from optical communications to chemical analysis and measurement fields. Hamamatsu provides a wide range of products in different packages including metal, ceramic and surface mount packages as well as linear and area image sensors, and infrared detector modules with built-in preamplifiers. We also manufacture custom products to meet your specific requirements. Please feel free to contact us. Topic A Hamamatsu InGaAs linear image sensor was installed in the asteroid explorer “HAYABUSA”. The asteroid explorer “HAYABUSA,” an unmanned spacecraft, returned to Earth after its long troublefilled journey carrying particles from the surface of the asteroid “Itokawa” that was nearly 300 million kilometers away from Earth at the time. The near infrared spectrometer (NIRS) in the HAYABUSA used a Hamamatsu InGaAs linear image sensor which is highly rated for its outstanding reliability and durability as well as high sensitivity in the near infrared region. This near infrared spectrometer is an instrument that analyzes the types of minerals on the asteroid surface and asteroid contour by detecting the light spectrum of infrared rays from the sun reflecting from the asteroid surface. M e a s u r i n g t h i s 0 . 8 t o 2 . 1 μ m l i g h t s p e c t ru m reflected from the surface of “Itokawa” showed that reflectance dropped in the vicinity of 1 μm and 2 μm, which revealed that minerals on the surface contained olivine and pyroxene. Courtesy of JAXA (Japan Aerospace Exploration Agency) Contents 1. Selection guide····· 2 ■ Spectral response range ····· 2 ■ Response speed ········· 4 ■ Packages ····················· 5 ■ Application examples ·· 6 2. InGaAs PIN photodiodes, InGaAs APD ··················· 8 3. InGaAs image sensors · 12 5. Options ····················· 16 ■ InGaAs linear image sensors ··· 12 ■ Short-wavelength enhanced type InGaAs PIN photodiodes ········· 8 ■ InGaAs area image sensors···· 13 ■ Amplifiers for infrared detector ···························· 16 ■ Standard type InGaAs PIN photodiodes ······· 8 ■ Long wavelength type InGaAs PIN photodiodes ······10 ■ InGaAs APD·························· 11 4. Related products ········· 14 ■ Heatsinks for TE-cooled detector ··········· 17 ■ Two-color detectors ·············· 14 ■ Temperature controllers ···· 17 ■ Infrared detector modules with preamp ·························15 ■ Multichannel detector heads ·· 18 6. Description of terms ·· 20 Selection guide Spectral response range Hamamatsu provides a wide lineup of InGaAs photodiodes with different spectral response characteristics ranging from 0.5 μm to 2.6 μm. Spectral response (typical example) (Typ. Ta=25 °C) 1.4 Long wavelength type InGaAs (to 2.1 μm) 1.2 Photosensitivity (A/W) Long wavelength type InGaAs (to 2.6 μm) Long wavelength type InGaAs (to 1.9 μm) 1.0 Short-wavelength enhanced type InGaAs 0.8 Si photodiode 0.6 S1337-BR type 0.4 Standard type InGaAs 0.2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Wavelength (μm) KIRDB0477EA Cutoff wavelength temperature dependence (typical example) (Typ.) 1.4 Photosensitivity (A/W) 1.2 Long wavelength type InGaAs (to 2.6 μm) Ta=25 °C Td=-10 °C Td=-20 °C Standard type InGaAs Long 1.0 wavelength type InGaAs 0.8 (to 1.9 μm) 0.6 0.4 Long wavelength type InGaAs (to 2.1 μm) 0.2 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Wavelength (μm) 2.2 2.4 2.6 2.8 KIRDB0478EA InGaAs photodiodes 2 InGaAs PIN photodiodes Type Short-wavelength enhanced type Type no. G10899 series G12180 series Page 0.4 0.6 0.8 1.0 Spectral response range (μm) 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 2.2 2.4 2.6 2.8 2.2 2.4 2.6 2.8 2.2 2.4 2.6 2.8 Non-cooled type (0.5 to 1.7 μm) 8 G11193 series Non-cooled type (0.9 to 1.7 μm) G8941 series Standard type COB G11777- 003P ROSA G12072-54 G6849 series Array One-stage TE-cooled type (0.9 to 1.67 μm) 9 G7150/G7151-16 Two-stage TE-cooled type (0.9 to 1.65 μm) G8909 - 01 G12430 series Non-cooled type (0.9 to 1.9 μm) One-stage TE-cooled type (0.9 to 1.87 μm) to 1.9 μm G12181 series Two-stage TE-cooled type (0.9 to 1.85 μm) Long wavelength to 2.1 μm G12182 series type Non-cooled type (0.9 to 2.1 μm) One-stage TE-cooled type (0.9 to 2.07 μm) 10 Two-stage TE-cooled type (0.9 to 2.05 μm) Non-cooled type (0.9 to 2.6 μm) One-stage TE-cooled type (0.9 to 2.57 μm) to 2.6 μm G12183 series Two-stage TE-cooled type (0.9 to 2.55 μm) InGaAs APD Type APD Type no. G8931 series Page 0.4 0.6 0.8 1.0 Spectral response range (μm) 1.2 1.4 1.6 1.8 2.0 Non-cooled type (0.9 to 1.7 μm) 10 InGaAs linear image sensors Type Type no. Page 0.4 0.6 0.8 G92X X series Standard type G9494 series 1.0 Spectral response range (μm) 1.2 1.4 1.6 1.8 2.0 Non-cooled type (0.9 to 1.7 μm) 11 One-stage TE-cooled type (0.9 to 1.67 μm) G10768 series Back-illuminated type Non-cooled type (0.95 to 1.7 μm) G11135 series One-stage TE-cooled type (0.95 to1.67 μm) G11620 series Two-stage TE-cooled type (0.9 to 1.85 μm) to 1.85 μm G9205 series to 2.05 μm G9206 -256W Long wavelength to 2.15 μm G9206 - 02/-512W type to 2.25 μm G9207-256W Two-stage TE-cooled type (0.9 to 2.05 μm) 12 Two-stage TE-cooled type (0.9 to 2.15 μm) Two-stage TE-cooled type (0.9 to 2.25 μm) Two-stage TE-cooled type (0.9 to 2.55 μm) to 2.55 μm G9208 series InGaAs area image sensor Type Type no. Page G11097- 0606S 0.4 0.6 0.8 1.0 Spectral response range (μm) 1.2 1.4 1.6 1.8 2.0 One-stage TE-cooled type (0.95 to1.67 μm) G11097- 0707S Standard type G12460 - 0606S G12242- 0707W G12242- 0909W 3 InGaAs photodiodes 12 One-stage TE-cooled type (1.12 to1.87 μm) Two-stage TE-cooled type (0.95 to1.65 μm) Selection guide Response speed InGaAs photodiodes with different response speeds and photosensitive areas are available to meet various applications including measurements requiring large photosensitive areas and optical communications requiring ultra-high speed. InGaAs PIN photodiodes [Cutoff frequency, Photosensitive area (unit: mm)] Type Short-wavelength enhanced type Type no. G10899 series G12180 series Page 8 20 40 ϕ3 ϕ2 60 80 Cutoff frequency (MHz) 500 1000 100 ϕ1 Standard type COB G11777- 003P ROSA G12072-54 G6849 series Array ϕ5,3,2 ϕ1 ϕ0.5 4000 5 G10 G ϕ0.3 ϕ0.3 ϕ1 ϕ0.5 ϕ0.2 ϕ0.3 ϕ0.3 ϕ0.03 9 ϕ2/4-element G7150/G7151-16 ϕ1/4-element 0.45 × 1 0.08 × 0.2 G8909 - 01 ϕ0.08 G12430 series to 1.9 μm G12181 series Long wavelength to 2.1 μm G12182 series type to 2.6 μm G12183 series 3000 ϕ0.5 ϕ0.3 G11193 series G8941 series 2000 0.45 × 1 10 ϕ3,2,1 ϕ0.5 ϕ3,2,1 ϕ0.5 ϕ3,2,1 ϕ0.5 0.2 × 1 ϕ0.3 ϕ0.3 ϕ0.3 InGaAs APD [Cutoff frequency, Photosensitive area (unit: mm)] Type APD Type no. G8931 series Page 20 40 60 80 100 Cutoff frequency (MHz) 500 1000 10 2000 3000 ϕ0.2 4000 5 G10 G ϕ0.04 InGaAs linear image sensors [Line rate, Number of pixels] Type Type no. Page G92X X series Standard type G9494 series Line rate (lines/s)*1 1000 5000 500 10000 512 ch*2 256 ch 11 512 ch*2 256 ch G10768 series Back-illuminated type 1024 ch G11135 series 512 ch G11620 series Long wavelength to 2.15 μm G9206 - 02/-512W type to 2.25 μm G9207-256W 256 ch 512 ch to 1.85 μm G9205 series to 2.05 μm G9206 -256W 50000 512 ch*2 512 ch*2 12 256 ch 128 ch 256 ch 256 ch 256 ch 256 ch to 2.55 μm G9208 series 512 ch*2 256 ch *1: When the integration time is set to the minimum value. *2: When two video lines are used for readout, the line rate is equal to that for 256 channels. InGaAs area image sensors [Frame rate, Number of pixels] Type Type no. Page 500 G11097- 0606S G12460 - 0606S G12242- 0707W G12242- 0909W 10000 50000 64 × 64 ch G11097- 0707S Standard type Frame rate (frames/s)* 3 1000 5000 128 × 128 ch 12 64 × 64 ch 128 × 128 ch 640 × 512 ch *3: Integration time 1 μs InGaAs photodiodes 4 Packages A wide variety of packages are provided ranging from surface mount types to highly reliable metal types. InGaAs PIN photodiodes Type Type no. Short-wavelength enhanced type G10899 series G12180 series G11193 series G8941 series COB G11777-003P Standard type ROSA G12072-54 G6849 series G7150/G7151-16 Array G8909-01 G12430 series to 1.9 μm G12181 series Long to 2.1 μm G12182 series wavelength type to 2.6 μm G12183 series Page Metal One-stage Non-cooled type TE-cooled type 1 8 Two-stage TE-cooled type Ceramic 3 4 Surface mount type 2 1 3 5 6 7 8 9 9 10 11 12 10 1 3 3 1 3 3 1 3 3 Metal One-stage TE-cooled type Two-stage TE-cooled type InGaAs APD Type Type no. APD G8931 series Page Non-cooled type 10 Ceramic Surface mount type 13 InGaAs linear image sensors Type Type no. Standard type Back-illuminated type to to to to to Long wavelength type 1.85 μm 2.05 μm 2.15 μm 2.25 μm 2.55 μm G92XX series G9494 series G10768 series G11135 series G11620 series G9205 series G9206-256W G9206-02/-512W G9207-256W G9208 series Page Metal One-stage TE-cooled type Non-cooled type Two-stage TE-cooled type 14 Ceramic 15 11 15 16 17 14 17 14 12 14 14 14 14 InGaAs area image sensors Type Type no. G11097- 0606S G11097- 0707S G12242- 0707W G12460 - 0606S G12242- 0909W Standard type 5 Page Metal One-stage TE-cooled type Non-cooled type Two-stage TE-cooled type Ceramic 18 19 12 20 21 22 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 InGaAs photodiodes Selection guide Application examples Here are some typical applications of Hamamatsu InGaAs photodiodes. InGaAs PIN photodiodes Type Type no. Page Short-wavelength enhanced type G10899 series 8 G12180 series Radiation Moisture thermometer meter Gas analysis Spectrophotometry Laser monitor DWDM monitor Optical power meter O O O O O O G11193 series Standard type G8941 series O O G11777-003P O O ROSA G12072-54 O 9 G6849 series O G7150/G7151-16 O G8909-01 O G12430 series O to 1.9 μm G12181 series Long wavelength type O O COB Array Optical Distance communication measurement to 2.1 μm G12182 series 10 to 2.6 μm G12183 series O O O O O O O O O O O O O Gas analysis Spectrophotometry O InGaAs APD Type APD Type no. Page G8931 series Radiation Moisture thermometer meter Laser monitor DWDM monitor Optical power meter Optical Distance communication measurement 10 O O InGaAs linear image sensors Type Type no. Page G92XX series Standard type G9494 series Thermometer Multichannel spectrophotometry Nondestructive inspection O O O O O O O O O O 11 G10768 series Back-illuminated type G11135 series G11620 series to 1.85 μm G9205 series Long wavelength type to 2.05 μm G9206-256W 12 O O O O O O O O O to 2.15 μm G9206-02/-512W O O O to 2.25 μm G9207-256W O O O to 2.55 μm G9208 series O O O Foreign object screening DWDM monitor OCT Optical spectrum analyzer O O O O InGaAs area image sensors Type Standard type Hyperspectral imaging Thermal image monitor Laser beam profiler Near infrared image detection Foreign object screening G11097-0606S O O O O O G11097-0707S O O O O O Type no. G12460-0606S Page 12 O O O O O G12242-0707W O O O O O G12242-0909W O O O O O InGaAs photodiodes 6 Application examples of InGaAs photodiodes Induction heating Optical power meter Optical fiber InGaAs PIN photodiode InGaAs PIN photodiode KIRDC0095EA KIRDC0100EA InGaAs PIN photodiode detects the temperature at the bottom InGaAs PIN photodiode is used to detect the level of near infra- of a frying pan. red light passing through an optical fiber, etc. Mini-spectrometer Rangefinder InGaAs APD Focusing lens InGaAs linear image sensor Transmission grating Collimating lens Entrance slit KIRDC0097EA KIRDC0098EA InGaAs linear image sensor is used in some of our mini-spec- InGaAs APD detects the distance to an object with high speed trometers. and accuracy. Grain sorter Hyperspectral imaging CCD InGaAs linear image sensor InGaAs area image senser Light source Light source Spectroscopy imaging Spray nozzle Unwanted grains Good grains KIRDC0099EA KIRDC0124EA Grain sorters irradiate light onto the falling grains and detect the A hyperspectral image of the ground environment is to be ob- transmitted light to sort out unwanted grains from good ones. tained by using an InGaAs area image sensor from a helicopter, (InGaAs linear image sensor detects near infrared light, and etc. CCD detects visible light.) 7 Optical spectrum measurement InGaAs photodiodes InGaAs PIN photodiodes, InGaAs APD Short-wavelength enhanced type Spectral response range InGaAs PIN photodiodes 0.5 μm 1.0 μm 1.5 μm 2.0 μm 2.5 μm The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899 series has sensitivity extending to 0.5 μm on the shorter wavelength side. A wide spectral range can be detected with a single detector. Features Applications Wide spectral response range Low noise, low dark current Large photosensitive area available Type no. Cooling Photosensitive area G10899-02K (mm) ϕ0.3 ϕ0.5 ϕ1 ϕ2 G10899-03K ϕ3 G10899-003K G10899-005K G10899-01K Non-cooled Spectrophotometry Radiation thermometers (Typ. Ta=25 °C) Spectral response range λ (μm) Peak Photosensitivity sensitivity S wavelength λ=λp λ=0.65 μm λp (A/W) (A/W) (μm) 0.5 to 1.7 1.55 0.15 0.85 Cutoff Dark current frequency ID fc VR=1 V VR=1 V (nA) (MHz) 0.3 300 0.5 150 1 45 5 10 15 5 Standard type Package Photo Option (sold separately) TO-18 C4159-03 TO-5 Spectral response range InGaAs PIN photodiodes 0.5 μm 1.0 μm 1.5 μm 2.0 μm 2.5 μm InGaAs PIN photodiodes have large shunt resistance and low noise. A wide variety of packages are available including highly reliable metal types and surface mount types. Features Applications Low noise, low dark current Various photosensitive areas available Laser monitor Optical measurement instruments Optical communications Metal package Photosensitive Cooling area (measurement condition) (mm) G12180-003A ϕ0.3 G12180-005A ϕ0.5 G12180-010A ϕ1 G12180-020A ϕ2 G12180-030A ϕ3 Type no. G12180-050A Non-cooled (Ta=25 °C) ϕ5 Spectral response range λ (μm) Peak Cutoff Photosensitivity Dark current sensitivity S ID frequency wavelength VR=1 V fc λ=λp λp (A/W) (nA) (MHz) (μm) 600 (VR=5 V) 0.1*1 200 (VR=5 V) 0.15*1 60 (VR=5 V) 0.8*1 1.5 13 (VR=1 V) 2.5 7 (VR=1 V) 0.9 to 1.7 1.1 Package 5 3 (VR=1 V) TO-8 1 35 (VR=1 V) TO-18 ϕ1 ϕ2 5 4 (VR=1 V) G8370-83*3 ϕ3 15 2 (VR=1 V) G8370-85*3 ϕ5 25*4 0.6 (VR=0 V) 0.07 0.3 1 2.5 0.03 0.15 0.5 1.2 40 (VR=1 V) 13 (VR=1 V) 7 (VR=1 V) 3 (VR=1 V) 40 (VR=1 V) 13 (VR=1 V) 7 (VR=1 V) 3 (VR=1 V) TO-8 0.08*1 2000 (VR=5 V) TO-18 with CD lens G6854-01 *1: VR=5 V One-stage TE-cooled (Td*2=-10 °C) Two-stage TE-cooled (Td=-20 °C) Non-cooled (Ta=25 °C) ϕ1 ϕ2 ϕ3 ϕ5 ϕ1 ϕ2 ϕ3 ϕ5 ϕ0.08 *2: Element temperature 0.9 to1.67 0.95 0.9 to 1.65 0.9 to 1.7 *3: Low PDL (polarization dependence loss) type *4: VR=0.1 V Option (sold separately) TO-5 G8370-82*3 G12180-110A G12180-120A G12180-130A G12180-150A G12180-210A G12180-220A G12180-230A G12180-250A Photo TO-18 G8370-81*3 1.55 (Typ.) C4159-03 TO-5 TO-8 C4159-03 A3179 C1103-04 C4159-03 A3179-01 C1103-04 InGaAs photodiodes 8 Ceramic package Type no. Photosensitive area (mm) G8370-10 ϕ10 G11193-02R ϕ0.2 (Typ. Ta=25 °C) (A/W) (nA) Cutoff frequency fc VR=5 V (MHz) 0.95 200 (VR=10 mV) 0.1 (VR=0 V) 0.04 1000 0.1 500 1 35 0.5 200 0.3 400 Spectral Peak sensitivity Photosensitivity response range wavelength S λ λp λ=λp (μm) (μm) 0.9 to 1.7 Dark current ID VR=5 V 1 G11193-03R ϕ0.3 Package - Photo Surface mount type 1.55 G8941-01 ϕ1 G8941-02 ϕ0.5 G8941-03 ϕ0.3 0.9 to 1.7 0.95 Surface mount type COB (chip on board) package Type no. G11777-003P (Typ. Ta=25 °C) (mm) (μm) (μm) (A/W) (nA) Cutoff frequency fc VR=5 V (MHz) ϕ0.3 0.9 to 1.7 1.55 0.95 0.1 500 Photosensitive area Spectral Peak sensitivity Photosensitivity response range wavelength S λ λp λ=λp Dark current ID VR=5 V Package Surface mount type (Ultra-compact type) Photodiode arrays Type no. Photosensitive area (mm) (Typ. Ta=25 °C) Spectral Peak sensitivity Photosensitivity response range wavelength S λ λp λ=1.55 μm (μm) (μm) (A/W) Dark current ID per element (nA) Cutoff frequency fc VR=1 V (MHz) G6849 ϕ2 (quadrant) 0.5 (VR=1 V) 30 G6849-01 ϕ1 (quadrant) 0.15 (VR=1 V) 120 G7150-16 0.45 × 1.0 (× 16-element) 5 (VR=1 V) 30 G7151-16 0.08 × 0.2 (× 16-element) 0.2 (VR=1 V) 300 1000 (VR=5 V) Package TO-5 0.9 to 1.7 1.55 0.95 G8909-01 ϕ0.08 (× 40-element) 0.02 (VR=5 V) G12430-016D 0.45 × 1.0 (× 16-element) 0.5 (VR=1 V) 30 G12430-032D 0.2 × 1.0 (× 32-element) 0.25 (VR=1 V) 60 G12430-046D 0.2 × 1.0 (× 46-element) 0.25 (VR=1 V) 60 Ceramic 9 InGaAs photodiodes Photo Photo InGaAs PIN photodiodes, InGaAs APD ROSA Type no. G12072-54 (Typ. Ta=25 °C, Vcc=3.3 V, unless otherwise noted) Wavelength band Responsivity R Data rate (μm) (A/W) (Gbps) Minimum receivable sensitivity Pmin (dBm) 1.31 0.8 8.5 to 11.3 -19.5 Maximum receivable sensitivity Pmax (dBm) +5 Type no. Photosensitivity S Cutoff frequency fc (V/mW) (GHz) Maximum receivable sensitivity Pmax (dBm) (kΩ) 2.25 (Single end) Pigtail/receptacle type (InGaAs PIN photodiodes with preamp) Minimum receivable sensitivity Pmin (dBm) Optical return loss ORL min. (dB) Transimpedance Tz Photo 12 (Typ. Ta=25 °C, Vcc=3.3 V, unless otherwise noted) Transimpedance Tz (kΩ) Optical return loss ORL min. (dB) Package Photo FC board receptacle G9821-22 12 FC panel receptacle G9821-32 1.5 2.1 -25.5 1.8 (single end) +1 min. G9822-11 Pigtail coaxial SC 27 G9822-12 Pigtail coaxial FC Pigtail/receptacle type (InGaAs PIN photodiodes) Type no. Spectral response range λ (μm) Peak sensitivity wavelength λp (μm) Photosensitivity S λ=1.55 μm (A/W) (Typ. Ta=25 °C, unless otherwise noted) Dark current ID VR=5 V (pA) Cutoff frequency fc VR=5 V (GHz) Package G8195-11 Photo Pigtail coaxial SC G8195-12 Pigtail coaxial FC 0.9 to 1.7 1.55 0.95 20 2 G9801-22 FC board receptacle G9801-32 FC panel receptacle Long wavelength type InGaAs PIN photodiodes Spectral response range 0.5 μm 1.0 μm 1.5 μm 2.0 μm 2.5 μm These are InGaAs PIN photodiodes whose spectral response range extends up to 2.6 μm. Three groups are available with different peak sensitivity wavelengths of 1.75 μm, 1.95 μm, and 2.3 μm. Thermoelectrically cooled, low noise types are also available. Peak sensitivity wavelength 1.75 μm Type no. G12181-003K G12181-005K G12181-010K G12181-020K G12181-030K G12181-103K G12181-105K G12181-110K G12181-120K G12181-130K G12181-203K G12181-205K G12181-210K G12181-220K G12181-230K Photosensitive Cooling area (measurement condition) (mm) ϕ0.3 ϕ0.5 Non-cooled ϕ1 (Ta=25 °C) ϕ2 ϕ3 ϕ0.3 ϕ0.5 One-stage TE-cooled ϕ1 (Td=-10 °C) ϕ2 ϕ3 ϕ0.3 ϕ0.5 Two-stage TE-cooled ϕ1 (Td=-20 °C) ϕ2 ϕ3 Spectral response range λ (μm) 0.9 to 1.9 0.9 to 1.87 0.9 to 1.85 (Typ.) Cutoff Peak Photosensitivity Dark current frequency sensitivity S ID fc wavelength VR=0.5 V λ=λp VR=0 V λp (A/W) (nA) (MHz) (μm) 1 90 3 35 10 10 50 2.5 100 1.5 0.1 140 0.3 50 1.75 1.1 1 16 5 3.5 10 1.8 0.05 150 0.15 53 0.5 17 2.5 3.7 5 1.9 Package Photo Option (sold separately) TO-18 C4159-03 TO-5 TO-8 C4159-03 A3179 C1103-04 TO-8 C4159-03 A3179-01 C1103-04 InGaAs photodiodes 10 Peak sensitivity wavelength 1.95 μm Type no. G12182-003K G12182-005K G12182-010K G12182-020K G12182-030K G12182-103K G12182-105K G12182-110K G12182-120K G12182-130K G12182-203K G12182-205K G12182-210K G12182-220K G12182-230K Photosensitive Cooling area (measurement condition) (mm) ϕ0.3 ϕ0.5 Non-cooled ϕ1 (Ta=25 °C) ϕ2 ϕ3 ϕ0.3 ϕ0.5 One-stage TE-cooled ϕ1 (Td=-10 °C) ϕ2 ϕ3 ϕ0.3 ϕ0.5 Two-stage TE-cooled ϕ1 (Td=-20 °C) ϕ2 ϕ3 Spectral response range λ (μm) 0.9 to 2.1 0.9 to 2.07 0.9 to 2.05 (Typ.) Cutoff Peak Photosensitivity Dark current frequency sensitivity S ID fc wavelength VR=0.5 V λ=λp VR=0 V λp (nA) (A/W) (μm) (MHz) 10 90 20 35 100 10 500 2.5 1000 1.5 1 140 3 50 1.95 1.2 10 16 50 3.5 100 1.8 0.5 150 1.5 53 5 17 25 3.7 50 1.9 Package Photo Option (sold separately) TO-18 C4159-03 TO-5 TO-8 C4159-03 A3179 C1103-04 TO-8 C4159-03 A3179-01 C1103-04 Peak sensitivity wavelength 2.3 μm Type no. G12183-003K G12183-005K G12183-010K G12183-020K G12183-030K G12183-103K G12183-105K G12183-110K G12183-120K G12183-130K G12183-203K G12183-205K G12183-210K G12183-220K G12183-230K Photosensitive Cooling area (measurement condition) (mm) ϕ0.3 ϕ0.5 Non-cooled ϕ1 (Ta=25 °C) ϕ2 ϕ3 ϕ0.3 ϕ0.5 One-stage TE-cooled ϕ1 (Td=-10 °C) ϕ2 ϕ3 ϕ0.3 ϕ0.5 Two-stage TE-cooled ϕ1 (Td=-20 °C) ϕ2 ϕ3 Spectral response range λ (μm) 0.9 to 2.6 0.9 to 2.57 0.9 to 2.55 (Typ.) Cutoff Peak Photosensitivity Dark current frequency sensitivity S ID fc wavelength VR=0.5 V λ=λp VR=0 V λp (μA) (A/W) (MHz) (μm) 0.4 50 1 20 3 6 10 1.5 30 0.8 0.12 70 0.3 25 2.3 1.3 0.9 7 3 2 9 0.9 0.085 75 0.21 28 0.65 8 2.1 2.3 6 1 Package Photo Option (sold separately) TO-18 C4159-03 TO-5 TO-8 C4159-03 A3179 C1103-04 TO-8 C4159-03 A3179-01 C1103-04 Spectral response range InGaAs APD 0.5 μm 1.0 μm 1.5 μm 2.0 μm 2.5 μm These are InGaAs APDs designed for distance measurement, FSO, low-light-detection, and optical communication, etc. The G8931-20 of large photosensitive area ϕ0.2 mm is also available. Type no. Cooling Photosensitive area (mm) G8931-04 G8931-20 11 InGaAs photodiodes Non-cooled ϕ0.04 ϕ0.2 Spectral response range λ (μm) Peak sensitivity wavelength λp (μm) 0.95 to 1.7 1.55 (Typ. Ta=25 °C) Photosensitivity Dark current S ID λ=1.55 μm VR=VBR × 0.9 M=1 (nA) (A/W) 0.9 Cutoff frequency fc M=10 (GHz) 40 4 150 0.9 Package TO-18 Photo InGaAs image sensors InGaAs linear image sensors InGaAs linear image sensors are comprised of an InGaAs photodiode array with high sensitivity in the near infrared region, charge amplifier arrays, an offset compensation circuit, a shift register, and a timing generator. The signal from each pixel is read out in charge integration mode. The G11135/G11620 series use a back-illuminated structure to allow signal readout from a single video line. Spectral response range 0.5 μm Standard type Type no. Cooling (measurement condition) G9202-512S One-stage TE-cooled (Td=-10 °C) G9203-256D Non-cooled (Ta=25 °C) G9203-256S One-stage TE-cooled (Td=-10 °C) G9204-512D Non-cooled (Ta=25 °C) G9204-512S One-stage TE-cooled (Td=-10 °C) G9211-256S G9212-512S G9213-256S G9214-512S One-stage TE-cooled (Td=-10 °C) G9494-256D Pixel pitch Number Photosensitive area of pixels (mm × mm) 50 256 25 512 12.8 × 0.25 G10768-1024D G10768-1024DB Non-cooled (Td=25 °C) 2.0 μm Spectral response range λ (μm) Photosensitivity S λ=λp (A/W) Dark current ID Ta=25 °C (pA) Defective pixels max. Photo 2.5 μm (%) 2 0.9 to 1.67 Applicable driver circuit (sold separately) C8061-01 1 0.9 to 1.7 50 - 256 4 0.9 to 1.67 0.95 C8061-01 0 12.8 × 0.5 0.9 to 1.7 25 - 512 1 0.9 to 1.67 50 25 50 25 256 512 256 512 50 256 12.8 × 0.05 25 512 12.8 × 0.025 25 1024 C8061-01 12.8 × 0.25 0.9 to 1.67 0.95 12.8 × 0.5 Non-cooled (Ta=25 °C) G9494-512D 1.5 μm (Typ. unless otherwise noted) (μm) G9201-256S 1.0 μm 25.6 × 0.1 1 C8061-01 1 C10820 1 C10854 4 0.9 to 1.7 25.6 × 0.025 2 1 4 1 0.95 1 0.9 to 1.7 0.95 ±1 Back-illuminated type Spectral response range These linear image sensors use a back-illuminated type InGaAs photodiode array 0.5 μm that is bump-connected to a CMOS-ROIC with a single output terminal. Type no. G11135-256DD G11135-512DE G11620-256DA G11620-512DA Cooling Pixel pitch Non-cooled (μm) 50 25 50 25 256 512 256 512 50 128 25 256 50 256 25 512 G11620-128DA G11620-256DF G11620-256SA G11620-512SA One-stage TE-cooled (Td=-10 °C) Photosensitive Number area of pixels (mm × mm) 12.8 × 0.05 12.8 × 0.025 12.8 × 0.5 Spectral response range λ (μm) 1.5 μm 2.0 μm 2.5 μm (Typ., unless otherwise noted) Photosensitivity S λ=λp (A/W) Dark current ID Ta=25 °C Defective pixels max. (pA) (%) ±0.2 Photo Applicable driver circuit (sold separately) C11514 0.95 to 1.7 0.82 6.4 × 0.5 12.8 × 0.5 1.0 μm 1 C11513 ±0.5 0.95 to 1.67 - InGaAs photodiodes 12 Spectral response range 0.5 μm Long wavelength type Type no. G9205-256W G9205-512W G9206-256W G9206-02 G9206-512W G9207-256W G9208-256W G9208-512W Cooling (measurement condition) 1.5 μm 2.0 μm 2.5 μm (Typ., unless otherwise noted) Pixel pitch (μm) 50 25 Two-stage TE-cooled (Td=-20 °C) 1.0 μm Number Photosensitive area of pixels (mm × mm) 256 512 50 256 25 512 50 256 25 512 12.8 × 0.25 Spectral response range λ (μm) Photosensitivity S λ=λp (A/W) Dark current ID Td=-20 °C (pA) 0.9 to 1.85 1.1 15 1.2 30 1.2 1.3 1.3 200 500 500 0.9 0.9 0.9 0.9 0.9 0.9 to to to to to to 2.05 2.15 2.15 2.25 2.55 2.55 Defective pixels max. Photo (%) 5 4 5 5 4 5 5 4 Applicable driver circuit (sold separately) C8062-01 Spectral response range InGaAs area image sensors 0.5 μm 1.0 μm 1.5 μm 2.0 μm 2.5 μm InGaAs area image sensors have a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and a back-illuminated type InGaAs photodiode area array. Type no. Cooling (measurement condition) Pixel pitch (μm) G11097-0606S G11097-0707S G12460-0606S G12242-0707W G12242-0909W 13 InGaAs photodiodes One-stage TE-cooled (Td=25 °C) 64 × 64 50 Photosensitivity S λ=λp (A/W) 0.95 to 1.67 0.8 Dark current ID Td=25 °C Defective pixels max. (pA) (%) 6.4 × 6.4 64 × 64 3.2 × 3.2 128 × 128 2.56 × 2.56 Applicable driver circuit (sold separately) C11512 3.2 × 3.2 128 × 128 Photo 2 C11512-01 1 One-stage TE-cooled (Td=0 °C) Two-stage TE-cooled (Td=15 °C) Number Photosensitive area of pixels (mm × mm) (Typ., unless otherwise noted) Spectral response range λ (μm) 20 1.12 to 1.9 8 (Td=0 °C) 0.8 0.5 (Td=15 °C) C11512 C11512-02 0.95 to 1.7 640 × 512 12.8 × 10.24 1.1 0.37 C12376 Related products Two-color detectors Two-color detectors use a combination of two light sensors with different spectral response, in which one sensor is mounted over the other sensor along the same optical axis to provide a broad spectral response range. As the combination of two light sensors, an infrared-transmitting Si photodiode and an InGaAs PIN photodiode (standard type or long wavelength type) or an infrared-transmitting InGaAs PIN photodiode (standard type) and an InGaAs PIN photodiode (long wavelength type) are available. Thermoelectrically cooled two-color detectors are also provided that cool the sensors to maintain their temperatures constant, allowing high precision measurement with an improved S/N. Features Applications Wide spectral response range Simultaneously detects light of multiple wavelengths in the same optical path High S/N (One-stage TE-cooled type) Spectrophotometers Radiation thermometer Flame monitor Laser monitor (Typ.) Type no. Cooling (measurement condition) K1713-05 K1713-08 K1713-09 Non-cooled (Ta=25 °C) K11908-010K K3413-05 K3413-08 One-stage TE-cooled (Td=-10 °C) K3413-09 K12728-010K K12729-010K Non-cooled (Ta=25 °C) Detector Photosensitive area Si InGaAs Si InGaAs Si InGaAs InGaAs InGaAs Si InGaAs Si InGaAs Si InGaAs Si InGaAs InGaAs InGaAs (mm) 2.4 × 2.4 ϕ0.5 2.4 × 2.4 ϕ1 2.4 × 2.4 ϕ1 2.4 × 2.4 ϕ1 2.4 × 2.4 ϕ0.5 2.4 × 2.4 ϕ1 2.4 × 2.4 ϕ1 2.4 × 2.4 ϕ1 2.4 × 2.4 ϕ1 Spectral response range λ (μm) 0.32 to 1.7 0.32 to 2.6 0.32 to 1.7 0.9 to 2.55 0.32 to 1.67 0.32 to 2.57 0.32 to 1.67 0.32 to 1.65 0.9 to 2.55 Peak sensitivity wavelength λp (μm) 0.94 1.55 0.94 2.3 0.94 1.55 1.55 2.1 0.94 1.55 0.94 2.3 0.94 1.55 0.96 1.55 1.55 2.1 Cutoff frequency Photofc sensitivity VR=0 V S RL=1 kΩ λ=λp (MHz) (A/W) 0.45 1.75 0.55 200 0.45 1.75 0.60 6*1 0.45 1.75 0.55 50 0.95 2*1 1.0 6*1 0.45 1.75 0.55 200 0.45 1.75 0.60 15 0.45 1.75 0.55 50 0.45 2*1 0.55 10*1 0.95 2*1 1.0 6*1 Package TO-5 Photo Option (sold separately) C9329 C4159-03 C4159-03 TO-8 C9329 C4159-03 A3179-03 C1103-04 Ceramic - *1: VR=0 V, RL=50 Ω InGaAs photodiodes 14 Infrared detector modules with preamps These are infrared detector modules using an InGaAs PIN photodiode and a preamp integrated into a compact case. Thermoelectrically cooled types and liquid nitrogen cooled types are provided for applications requiring low noise. Custom products are also available with different spectral response ranges, time response characteristics, and gains. Features Applications Easy to use Just connecting it to a DC power supply provides a voltage output that varies with the incident light level. Compact size Low noise, high sensitivity (TE-cooled type, liquid nitrogen cooled type) Type no. G6121 C12485-210 G8370-05 G12183-210K C12483-250 G12180-250A G7754-03 InGaAs photodiodes Cooling (measurement condition) Non-cooled (Ta=25 °C) G12182-210K C12486-210 G7754-01 15 Detector G12183-010 (chip) G12183-030 (chip) TE-cooled (Td=-15 °C) Liquid nitrogen (Td=-196 °C) Various infrared detections (Typ.) (mm) Cutoff wavelength λc (μm) Peak sensitivity wavelength λp (μm) Photosensitivity S λ=λp (V/W) ϕ5 1.7 1.55 1 × 106 ϕ1 2.05 1.95 1.7 × 108 ϕ1 2.56 2.3 1.5 × 108 ϕ5 1.66 1.55 5 × 107 2.4 2.0 Photosensitive area 2 × 109 ϕ1 ϕ3 5 × 108 Photo Options A variety of options are provided to facilitate using InGaAs photodiodes. Connection example *1 Power supply (±15 V) TE-cooled detector*3 *2 POWER OUT Measurement instrument Amplifier for infrared detector C4159-03 Heatsink for TE-cooled detector A3179 series Power suppy (100 V, 115 V, 230 V) ûC Temperature controller C1103-04 KIRDC0101EB Cable no. Cable Approx. length Coaxial cable (for signal, no connector) 2m 4-conductor cable (with a connector) A4372-05 3m 4-conductor cable (with a connector) A4372-02 2m BNC connector cable E2573 1m Power supply cable(for temperature controller) 1.9 m Note Supplied with heatsink A3179 series. When using this cable, make it as short as possible (preferably about 10 cm). Supplied with temperature controller C1103-04. This cable is also sold separately. This cable is supplied with the C4159-03 amplifier for infrared detector, and infrared detector modules with preamps (non-cooled type). This cable is also sold separately. Besides this cable, the A4372-03, which is a 6-conductor cable (with connector) supplied with infrared detector module with preamp (non-cooled type), is also sold separately. Option Supplied with temperature controller C1103-04 *1: Attach the bare wire end to a 3-pin or 4-pin connector or to a banana plug, and then connect them to the power supply. *2: Soldering is needed. When using the C5185 series amplifier, a BNC connector (prepared by the user, example: one end of the E2573) is required. *3: No socket is available. Soldering is needed. Amplifier for infrared detectors For InGaAs PIN photodiode The C4159-03 is a low noise amplifier for InGaAs PIN photodiodes. Features Accessories Low noise 3 ranges switchable Instruction manual Power cable A4372-02 (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) Specification Parameter Applicable detector*4 *5 Conversion impedance Frequency response Output impedance Maximum output voltage Output offset voltage Equivalent input noise current Reverse voltage External power supply*6 Current consumption (Typ.) Condition Amp only, -3 dB 1 kΩ load f=1 kHz Specification InGaAs 107, 106, 105 (3 ranges switchable) DC to 15 kHz 50 +10 ±5 2.5 Can be applied from external unit ±15 ±15 max. Unit V/A Ω V mV pA/Hz1/2 V mA Photo Note: A power supply is needed to use this amplifier. *4: These amplifiers cannot operate multiple detectors. *5: Consult us before purchasing if you want to use with a detector other than listed here. *6: Recommended DC power supply (analog power supply): ±15 V Current capacity: more than 1.5 times the maximum current consumption Ripple noise: 5 mVp-p or less InGaAs photodiodes 16 Heatsinks for TE-cooled detectors For InGaAs PIN photodiode and two-color detector The A3179 series heatsinks are designed specifically for thermoelectrically cooled infrared detectors. When used at an ambient temperature of 25 °C, the A3179 and A3179-03 provide a temperature difference (ΔT) of about 35 °C and the A3179-01 provides a temperature difference (ΔT) of about 45 °C. Features Accessories A3179: for one-stage TE-cooled type A3179-01: for two-stage TE-cooled type A3179-03: for two-color detector K3413 series Compact size Instruction manual 4-conductor cable (2 m): for TE-cooler and thermistor*1 *2 Coaxial cable (2 m): for signal*1 Note: *1: When used in combination with the C1103-04 temperature controller, do not use the 4-conductor cable supplied with the A3179 series, but use the 4-conductor cable A4372-05 (sold separately, with a connector). *2: No socket is supplied for connection to infrared detectors. Connect infrared detectors by soldering. Cover the soldered joints and detector pins with vinyl insulating tubes. A3179-01 Temperature controller For InGaAs PIN photodiode The C1103-04 is a temperature controller designed for TE-cooled infrared detectors. The C1103-04 allows temperature setting for the TE-cooler mounted in an infrared detector. Accessories Instruction manual 4-conductor cable A4372-05 (with a connector, 3 m): for TE-cooler and thermistor*3 Power supply cable Specifications Parameter Applicable detector*4 Specification One-stage /two-stage TE-cooled InGaAs PIN photodiode Setting element temperature -30 to +20 °C Temperature stability within ±0.1 °C Output current for temperature control Power supply Power consumption Dimensions Weight Photo 1.1 A min., 1.2 A typ., 1.3 A max. 100 V ± 10% ∙ 50/60 Hz*5 30 W 107 (W) × 84 (H) × 190 (D) mm Approx. 1.9 kg *3: When used in combination with the A3179 series heatsink, do not use an 4-conductor cable supplied with the A3179 series, but use the A4372-05 instead. *4: This temperature controller does not support TE-cooled infrared detector modules with preamps and cannot set temperatures on two or more TE-coolers. *5: Please specify power supply requirement (AC line voltage) from among 100 V, 115 V and 230 V when ordering. 17 InGaAs photodiodes Options Multichannel detector heads For InGaAs image sensor Multichannel detector heads for InGaAs linear image sensor (one-stage/two-stage TE- cooled type) C8061/C8062-01 The C8061-01 and C8062-01 are multichannel detector heads designed for use with an InGaAs linear image sensor developed for near infrared spectrophotometry. These detector heads contain a driver circuit that operates from input of simple external signals. When used in combination with the C7557-01 multichannel detector head controller and the supplied software, these multichannel detector heads can be controlled from a PC and easily acquire data. Features Applications Built-in driver circuit for InGaAs linear image sensor C8061-01: for one-stage TE-cooled type C8062-01: for two-stage TE-cooled type Highly stable temperature controller Cooling temperature (Ta=10 to 30 °C) fixed at Td=-10 ± 0.1 °C (C8061-01), -20 ± 0.1 °C (C8062-01) Simple signal input operation Compact size Type no. Output Near infrared multichannel spectroscopy Radiation thermometer Non-destructive inspection Optical fiber transmittance measurement Photo Applicable sensor (sold separately) G9201/G9203/G9211/G9213-256S, G9202/G9204/G9212/G9214-512S C8061-01 Analog G9205/G9206/G9207/G9208-256W, G9206-02 G9205/G9206/G9208-512W C8062-01 Multichannel detector head controller Type no. Interface C7557-01 Photo Applicable multichannel detector head (sold separately) USB 2.0 C8061-01, C8062-01 Connection example Shutter* timing pulse AC cable (100 to 240 V; included with C7557-01) Trig. POWER Dedicated cable (included with C7557-01) SIGNAL I/O USB cable (included with C7557-01) TE CONTROL I/O Image sensor + Multichannel detector head C7557-01 PC [Windows 7 (32-bit, 64-bit), 8 (64-bit), 8.1 (64-bit)] (USB 2.0) * Shutter, etc. are not available KACCC0402EE InGaAs photodiodes 18 Multichannel detector head for InGaAs linear image sensor (G10768 series) C10854 The C10854 is a multichannel detector head designed for applications such as sorting machines and SD-OCT (spectral domain optical coherence tomography) where high-speed response is essential. The C10854 is optimized for use with the G10768 series InGaAs linear image sensors and controllable from a PC by using the supplied application software (DCam-CL) that runs on Windows 7 (32-bit, 64-bit). Features Applications High-speed operation: 5 MHz Line rate: 31.25 kHz Supports CameraLink Type no. C10854 Near infrared multichannel spectroscopy Foreign object screening OCT (optical coherence tomography) Interface Output CameraLink Digital Photo Applicable sensor (sold separately) G10768-1024D, G10768-1024DB Multichannel detector heads for InGaAs area image sensors (G11097 series) C11512 series The C11512 series is a multichannel detector head designed for the G11097 series InGaAs area image sensors. The C11512 series supports a variety of near infrared imaging applications and is controllable from a PC by using the supplied application software (DCam-CL) that runs on Windows 7 (32-bit, 64-bit). Features Applications Built-in temperature control circuit [Td=10 °C typ. (Ta=25 °C)] Supports CameraLink Compact size External trigger input Adjustable offset and gain Pulse output setting Type no. Thermal imaging Laser beam profiler Foreign object inspection Interface Output CameraLink Digital C11512 C11512-01 19 InGaAs photodiodes Photo Applicable sensor (sold separately) G11097-0606S G11097-0707S Description of terms Spectral response Terminal capacitance: Ct The relation (photoelectric sensitivity) between the incident light level and resulting photocurrent differs depending on the wavelength of the incident light. This relation between the photoelectric sensitivity and wavelength is referred to as the spectral response characteristic and is expressed in terms of photosensitivity or quantum efficiency. In a photodiode, the PN junction can be considered as a type of capacitor. This capacitance is termed the junction capacitance and is an important parameter in determining the response speed. In current-to-voltage conversion circuits using an op amp, the junction capacitance might cause gain peaking. At HAMAMATSU, we specify the terminal capacitance including this junction capacitance plus the package stray capacitance. Photosensitivity: S The ratio of photocurrent expressed in amperes (A) or output voltage expressed in volts (V) to the incident light level expressed in watts (W). Photosensitivity is represented as an absolute sensitivity (A/W or V/W) or as a relative sensitivity (%) to the peak wavelength sensitivity normalized to 100. We usually define the spectral response range as the range in which the relative sensitivity is higher than 5% or 10% of the peak sensitivity. Quantum efficiency: QE This is the number of electrons or holes that can be extracted as photocurrent divided by the number of incident photons. It is commonly expressed in percent (%). The quantum efficiency QE and photosensitivity S (unit: A/W) have the following relationship at a given wavelength (unit: nm). Rise time: tr The rise time is the time required for the output to rise from 10% to 90% of the maximum output value (steady-state value) in response to input of step-function light. Cutoff frequency: fc This is the measure used to evaluate the time response of high-speed PIN photodiodes to a sinewave-modulated light input. It is defined as the frequency at which the photodiode output decreases by 3 dB from the output at 100 kHz. The light source used is a laser diode (1.3 μm or 1,55 μm) and the load resistance is 50 Ω. The rise time tr has a relation with the cutoff frequency fc as follows: tr [s]= Short circuit current: Isc This is the output current that flows in a photodiode when load resistance is zero. This is called "white light sensitivity" to differentiate it from the spectral response, and is measured with light from a standard tungsten lamp at 2856 K distribution temperature (color temperature). Our product catalog lists the short circuit current measured under an illuminance of 100 lx. 0.35 fc [Hz] Noise equivalent power: NEP NEP is the incident light level equivalent to the noise level of a device. In other words, it is the light level required to obtain a signal-to-noise ratio (S/N) of 1. We define the NEP value at the peak sensitivity wavelength (λp). Since the noise level is proportional to the square root of the frequency bandwidth, the bandwidth is normalized to 1 Hz. Peak sensitivity wavelength: λp This is the wavelength at which the photosensitivity of the detector is at maximum. Cutoff wavelength: λ c This represents the long wavelength limit of spectral response and in datasheets is listed as the wavelength at which the sensitivity becomes 10% of the value at the peak sensitivity wavelength. Dark current: ID A small current which flows when a reverse voltage is applied to a photodiode even in a dark state. This current is called the dark current. Noise resulting from dark current becomes dominant when a reverse voltage is applied to photodiodes (PIN photodiodes, etc.). Reverse voltage: VR max A p p l y i n g a r eve r s e vo l t a g e t o a p h o t o d i o d e t r i g g e r s a b r e a k d ow n a t a c e r t a i n vo l t a g e a n d c a u s e s s eve r e deterioration of the device performance. Therefore the absolute maximum rating is specified for reverse voltage at the voltage somewhat lower than this breakdown voltage. The reverse voltage shall not exceed the maximum rating, even instantaneously. Reference (Physical constants relating to light and opto-semiconductors) Constant Electron charge Symbol Numerical value Unit q 1.602 × 10-19 C 108 Shunt resistance: Rsh Speed of light in vacuum c This is the voltage/current ratio of a photodiode operated in the vicinity of 0 V. In our product catalog, the shunt resistance is specified by the following equation, where the dark current (ID) is a value measured at a reverse voltage of 10 mV. Planck's constant h 6.626 × 10-34 J·s Boltzmann's constant k 1.381 × 10-23 J/K Thermal energy at room temperature kT 0.0259 (300 K) eV Energy of 1eV eV 1.602 × 10-19 J - 1240 nm Permittivity of vacuum εo 8.854 × 10-12 F/m Band gap energy of silicon Eg Approx. 1.12 (25 °C) eV Wavelength equivalent to 1 eV in vacuum Noise generated from the shunt resist ance becomes dominant in applications where a reverse voltage is not applied to the photodiode. 2.998 × m/s InGaAs photodiodes 20 Disclaimer Products manufactured by Hamamatsu Photonics K.K. (hereafter “Hamamatsu”) are intended for use in general-use electronic devices (such as measurement equipment, office equipment, information communications equipment, household appliances, etc.). Unless an exception to the following is stated in the documentation of a specific product, Hamamatsu products are not to be used for special applications which demand extremely high reliability or safety (such as equipment for nuclear power control, aerospace equipment, medical equipment and transportation equipment that directly affect human life, or disaster prevention or safety equipment). Hamamatsu products should not be used in excess of their absolute maximum ratings. Attention must be paid to all documented precautions. Hamamatsu continually makes efforts to improve the quality and reliability of its products; however these efforts cannot ensure 100% compliance with the manufacturing specifications. Sufficient safety design (such as redundant safety, fire preventative, and malfunction preventative features) are to be implemented in the development of equipment manufactured with the Hamamatsu product so that personal injury, fire, or damage to public property or welfare does not occur in the unlikely event of a malfunction of the Hamamatsu product. A dangerous condition could be created if sufficient consideration is not given to safety design that addresses potential problems, especially in the design of equipment where the failure or malfunction of the Hamamatsu product within the equipment could result in bodily harm, life-threatening injury, or serious property damage during the use of the equipment. With such types of equipment, Hamamatsu shall not be responsible for the use of its products within the equipment in any way for not obtaining our written consent such as specification sheets beforehand. 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HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1, Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558, Japan Telephone: (81)53-434-3311, Fax: (81)53-434-5184 www.hamamatsu.com Main Products Si photodiodes APD MPPC Photo IC Image sensors PSD Infrared detectors LED Optical communication devices Automotive devices X-ray flat panel sensors Mini-spectrometers Opto-semiconductor modules Hamamatsu also supplies: Photoelectric tubes Imaging tubes Light sources Imaging and processing systems Sales Offices Japan: HAMAMATSU PHOTONICS K.K. 325-6, Sunayama-cho, Naka-ku, Hamamatsu City, Shizuoka Pref. 430-8587, Japan Telephone: (81)53-452-2141, Fax: (81)53-456-7889 E-mail: [email protected] Belgian Office Axisparc Technology, rue Andre Dumont 7 1435 Mont-Saint-Guibert, Belgium Telephone: (32)10 45 63 34 Fax: (32)10 45 63 67 E-mail: [email protected] China: HAMAMATSU PHOTONICS (CHINA) Co., Ltd. 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Telephone: (1)408-261-2022, Fax: (1)408-261-2522 E-mail: [email protected] Netherlands Office Televisieweg 2, NL-1322 AC Almere, The Netherlands Telephone: (31)36-5405384, Fax: (31)36-5244948 E-mail: [email protected] Chicago Office 4711 Golf Road, Suite 805, Skokie, IL 60076, U.S.A. Telephone: (1)847-725-6046, Fax: (1)847-825-2189 E-mail: [email protected] Poland Office 02-525 Warsaw, 8 St. A. Boboli Str., Poland Telephone: (48)22-646-0016, Fax: (48)22-646-0018 E-mail: [email protected] Boston Office 20 Park Plaza, Suite 312, Boston, MA 02116, U.S.A. Telephone: (1)617-536-9900, Fax: (1)408-261-2522 E-mail: [email protected] North Europe and CIS: HAMAMATSU PHOTONICS NORDEN AB Main Office Torshamnsgatan 35 16440 Kista, Sweden Telephone: (46)8-509 031 00, Fax: (46)8-509 031 01 E-mail: [email protected] United Kingdom: HAMAMATSU PHOTONICS UK Limited Main Office 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, UK Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: [email protected] South Africa Office: PO Box 1112, Buccleuch 2066, Johannesburg, South Africa Telephone/Fax: (27)11-802-5505 Information in this catalogue is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Germany, Denmark, The Netherlands, Poland: HAMAMATSU PHOTONICS DEUTSCHLAND GmbH. Main Office Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany Telephone: (49)8152-375-0, Fax: (49)8152-265-8 E-mail: [email protected] France, Portugal, Belgium, Switzerland, Spain: HAMAMATSU PHOTONICS FRANCE S.A.R.L. Main Office 19, Rue du Saule Trapu Parc du Moulin de Massy, 91882 Massy Cedex, France Telephone: (33)1 69 53 71 00 Fax: (33)1 69 53 71 10 E-mail: [email protected] Russian Office 11, Christoprudny Boulevard, Building 1, Office 114, 101000, Moscow, Russia Telephone: (7)495 258 85 18, Fax: (7)495 258 85 19 E-mail: [email protected] Italy: HAMAMATSU PHOTONICS ITALIA S.r.l. Main Office Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy Telephone: (39)02-935-81-733, Fax: (39)02-935-81-741 E-mail: [email protected] Rome Office Viale Cesare Pavese, 435, 00144 Roma, Italy Telephone: (39)06-50513454, Fax: (39)06-50513460 E-mail: [email protected] Swiss Office Dornacherplatz 7 4500 Solothurn, Switzerland Telephone: (41)32-625-60-60, Fax: (41)32-625-60-61 E-mail: [email protected] © 2015 Hamamatsu Photonics K.K. Quality, technology, and service are part of every product. Cat. No. KIRD0005E02 Mar. 2015 DN Printed in Japan (2,000)