PHOTOMULTIPLIER TUBE R2496 Fast Time Response 10 mm (3/8 Inch) Diameter, 8-stage, Head-on, Bialkali Photocathode FEATURES ●Coincident Resolving Time with BaF2-BaF2/22Na ........................................... 0.45 ns ●Fast Time Response Transit Time Spread (FWHM) ............................ 0.6 ns ●Quantum Efficiency at 225 nm .............................. 18 % GENERAL Parameter Spectral Response Wavelength of Maximum Response MateriaI Photocathode Minimum Effective Area Window Material Structure Dynode Number of Stages Anode to Last Dynode Direct Interelectrode Anode to All Other Electrodes Capacitances Base Operating Ambient Temperature Storage Temperature Weight Suitable Socket Description / Value 160 to 650 420 Bialkali 8 Fused silica Linear focused 8 0.7 2.0 11-pin glass base -30 to +50 -80 to +50 Approx. 5 E678-11N (supplied) Unit nm nm — mm — — — pF pF — °C °C g — Value 1500 0.03 Unit V mA MAXIMUM RATINGS (Absolute Maximum Values) Supply Voltage Average Anode Current Parameter Between Anode and Cathode CHARACTERISTICS (at 25 °C) Cathode Sensitivity Anode Sensitivity Parameter Luminous (2856 K) Radiant at 420 nm Blue Sensitivity Index (CS 5-58) Luminous (2856 K) Radiant at 420 nm Gain Anode Dark Current (After 30 minute storage in darkness) Anode Pulse Rise Time Time Response Electron Transit Time Transit Time Spread (FWHM) Min. 60 — — 30 — — — — — — Typ. 100 80 10.0 100 8.0 × 104 1.0 × 106 2 0.7 9.0 0.6 Max. — — — — — — 50 — — — Unit µA/lm mA/W — A/lm A/W — nA ns ns ns VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 P Distribution Ratio 3 1.5 1.5 1 1 1 1 1 1 Supply Voltage: 1250 Vdc, K: Cathode, Dy: Dynode, P: Anode Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K. PHOTOMULTIPLIER TUBE R2496 Figure 1: Typical Spectral Response TPMHB0566EA 107 TPMHB0567EA CATHODE RADIANT SENSITIVITY 106 10 QUANTUM EFFICIENCY GAIN CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 100 Figure 2: Typical Gain Characteristics 1 104 0.1 0.01 105 200 400 600 103 500 800 WAVELENGTH (nm) 700 1000 1500 2000 SUPPLY VOLTAGE (V) Figure 3: Dimensional Outline and Basing Diagram (Unit: mm) Socket E678-11N (Supplied) 10.5 ± 0.5 8 MIN. 4.3 P 6 DY7 5 DY5 8 4 9 DY4 DY3 3 2 1 IC 11 K 10 DY2 10.5 9.5 SHORT PIN 3 10 MAX. DY1 11 PIN BASE DY6 11 45.0 ± 1.5 PHOTOCATHODE DY8 7 3 FACEPLATE TPMHA0442EA 9.5 TACCA0043EA HAMAMATSU PHOTONICS K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] TPMH1229E02 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected] DEC. 2010 IP