To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING BCR10PM Dimensions in mm 10.5 MAX 2.8 8.5 17 5.0 1.2 5.2 TYPE NAME φ3.2±0.2 VOLTAGE CLASS 13.5 MIN 3.6 1.3 MAX 0.8 2.54 IT (RMS) ...................................................................... 10A VDRM ....................................................................... 600V IFGT !, IRGT !, IRGT # ............................................ 20mA Viso ........................................................................ 2000V UL Recognized: Yellow Card No.E80276(N) File No. E80271 123 0.5 2.6 ∗ Measurement point of case temperature 4.5 • • • • • 2.54 2 1 1 T1 TERMINAL 2 T2 TERMINAL 3 3 GATE TERMINAL TO-220F APPLICATION Switching mode power supply, light dimmer, electric flasher unit, hair drier, control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared kotatsu · carpet, small motor control, copying machine, electric tool, solenoid drivers, other general purpose control applications MAXIMUM RATINGS Symbol Voltage class Parameter Unit 12 VDRM Repetitive peak off-state voltage ✽1 600 V VDSM Non-repetitive peak off-state voltage ✽1 720 V Symbol Parameter Conditions Ratings Unit IT (RMS) RMS on-state current Commercial power frequency, sine full wave 360° conduction, Tc=85°C ITSM Surge on-state current I2t I2t PGM Peak gate power dissipation 5 W PG (AV) Average gate power dissipation 0.5 W VGM Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature Tstg A 60Hz sinewave 1 full cycle, peak value, non-repetitive 100 A Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 41.6 A2s Storage temperature — Viso for fusing 10 Weight Typical value Isolation voltage Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case A –40 ~ +125 °C –40 ~ +125 °C 2.0 g 2000 V ✽1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM MEDIUM POWER USE Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 2.0 mA VTM On-state voltage Tc=25°C, ITM=15A, Instantaneous measurement — — 1.5 V — — 1.5 V — — 1.5 V ! VFGT ! VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω VRGT # # — — 1.5 V IFGT ! ! — — 20 mA — — 20 mA — — 20 mA IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω # IRGT # VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.2 — — V Rth (j-c) Thermal resistance Junction to case ✽3 — — 3.5 °C/ W (dv/dt)c Critical-rate of rise of off-state commutating voltage Tj=125°C 10 — — V/µs ✽4 ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. ✽4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Test conditions SUPPLY VOLTAGE 1. Junction temperature Tj=125°C 2. Rate of decay of on-state commutating current (di/dt)c=–5.0A/ms MAIN CURRENT 3. Peak off-state voltage VD=400V MAIN VOLTAGE TIME (di/dt)c TIME TIME (dv/dt)c VD PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT MAXIMUM ON-STATE CHARACTERISTICS 100 7 5 3 2 101 7 5 3 2 Tj = 125°C Tj = 25°C 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 102 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM MEDIUM POWER USE Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) 102 7 5 3 2 VGM = 10V 101 7 5 3 2 GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE PGM = 5W PG(AV) = 0.5W IGM = 2A VGT = 1.5V 100 7 5 3 2 VGD = 0.2V IRGT I IFGT I, IRGT III 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) GATE VOLTAGE (V) GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) 103 7 5 4 3 2 TYPICAL EXAMPLE IRGT I, IRGT III 102 7 5 4 3 2 IFGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140 GATE CURRENT (mA) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 102 2 3 5 7 103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) JUNCTION TEMPERATURE (°C) 103 7 5 3 2 NO FINS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 16 14 12 360° CONDUCTION 10 RESISTIVE, INDUCTIVE 8 LOADS 6 4 2 0 0 2 4 6 8 10 12 14 16 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM MEDIUM POWER USE Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C INSULATED TYPE, PLANAR PASSIVATION TYPE CASE TEMPERATURE (°C) 160 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 140 120 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 4 2 6 0 8 10 12 14 AMBIENT TEMPERATURE (°C) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 16 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 120 120 t2.3 100 100 100 t2.3 80 60 60 t2.3 60 RESISTIVE, 40 INDUCTIVE LOADS 20 NATURAL CONVECTION 0 4 2 6 0 40 20 HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 100 (%) 0 103 7 5 4 3 2 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 12 14 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 RMS ON-STATE CURRENT (A) JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. JUNCTION TEMPERATURE LACHING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 16 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 100 (%) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) 60 LACHING CURRENT (mA) AMBIENT TEMPERATURE (°C) 80 10 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 8 103 7 5 3 2 DISTRIBUTION 102 7 5 3 2 101 7 5 3 2 T2+, G– TYPICAL EXAMPLE T2+, G+ TYPICAL T2– , G– EXAMPLE 100 –40 0 40 80 120 160 JUNCTION TEMPERATURE (°C) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM MEDIUM POWER USE Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 TYPICAL EXAMPLE 160 TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 120 100 80 60 III QUADRANT 40 20 I QUADRANT 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) COMMUTATION CHARACTERISTICS GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 7 5 3 2 SUPPLY VOLTAGE (di/dt)c TIME MAIN VOLTAGE (dv/dt)c 101 7 5 TIME VD MINIMUM CHARACTERISTICS VALUE 3 2 100 7 100 TYPICAL EXAMPLE Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz TIME MAIN CURRENT 100 (%) JUNCTION TEMPERATURE (°C) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µ s) BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) 140 BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE I QUADRANT III QUADRANT 5 7 101 2 3 2 3 103 7 5 4 3 2 TYPICAL EXAMPLE IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω A 6V A 6V RG V TEST PROCEDURE 1 V RG TEST PROCEDURE 2 6Ω A 6V V RG TEST PROCEDURE 3 Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING BCR10PM Dimensions in mm 10.5 MAX 2.8 8.5 17 5.0 1.2 5.2 TYPE NAME φ3.2±0.2 VOLTAGE CLASS 13.5 MIN 3.6 1.3 MAX 0.8 2.54 IT (RMS) ...................................................................... 10A VDRM ....................................................................... 600V IFGT !, IRGT !, IRGT # ............................................ 20mA Viso ........................................................................ 2000V UL Recognized: Yellow Card No.E80276(N) File No. E80271 123 0.5 2.6 ∗ Measurement point of case temperature 4.5 • • • • • 2.54 2 1 1 T1 TERMINAL 2 T2 TERMINAL 3 3 GATE TERMINAL TO-220F APPLICATION Switching mode power supply, light dimmer, electric flasher unit, hair drier, control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared kotatsu · carpet, small motor control, copying machine, electric tool, solenoid drivers, other general purpose control applications (Warning) 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied. MAXIMUM RATINGS Symbol Voltage class Parameter Unit 12 VDRM Repetitive peak off-state voltage ✽1 600 V VDSM Non-repetitive peak off-state voltage ✽1 720 V Symbol Parameter Conditions Ratings Unit IT (RMS) RMS on-state current Commercial power frequency, sine full wave 360° conduction, Tc=110°C ITSM Surge on-state current I2t I2t PGM Peak gate power dissipation 5 W PG (AV) Average gate power dissipation 0.5 W VGM Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature Tstg A 60Hz sinewave 1 full cycle, peak value, non-repetitive 100 A Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 41.6 A2s Storage temperature — Viso for fusing 10 Weight Typical value Isolation voltage Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case A –40 ~ +150 °C –40 ~ +150 °C 2.0 g 2000 V ✽1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM MEDIUM POWER USE The product guaranteed maximum junction temperature 150°C (See warning.) INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=150°C, VDRM applied — — 2.0 mA VTM On-state voltage Tc=25°C, ITM=15A, Instantaneous measurement — — 1.5 V — — 1.5 V — — 1.5 V ! VFGT ! VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω VRGT # # — — 1.5 V IFGT ! ! — — 20 mA — — 20 mA — — 20 mA 0.2/0.1 — — V — — 3.5 °C/ W 10/1 — — V/µs IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω # IRGT # VGD Gate non-trigger voltage Tj=125°C/150°C, VD=1/2VDRM Rth (j-c) Thermal resistance Junction to case ✽3 (dv/dt)c Critical-rate of rise of off-state commutating voltage ✽4 Tj=125°C/150°C ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. ✽4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Test conditions SUPPLY VOLTAGE 1. Junction temperature Tj=125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c=–5.0A/ms MAIN CURRENT 3. Peak off-state voltage VD=400V MAIN VOLTAGE TIME (di/dt)c TIME TIME (dv/dt)c VD PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT MAXIMUM ON-STATE CHARACTERISTICS 100 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 102 7 5 3 2 Tj = 150°C 101 7 5 3 2 Tj = 25°C 100 7 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 ON-STATE VOLTAGE (V) 4.0 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM MEDIUM POWER USE The product guaranteed maximum junction temperature 150°C (See warning.) INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE GATE VOLTAGE (V) 5 3 2 VGM = 10V 101 7 5 3 2 PGM = 5W PG(AV) = 0.5W IGM = 2A VGT = 1.5V 100 7 5 3 2 IRGT I IFGT I, IRGT III 10–1 7 VGD = 0.1V 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 100 (%) GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) 103 TYPICAL EXAMPLE 7 5 3 IRGT I, IRGT III 2 102 IFGT I 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 GATE CURRENT (mA) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 102 2 3 5 7 103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) JUNCTION TEMPERATURE (°C) 103 7 5 3 2 NO FINS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 16 14 12 360° CONDUCTION 10 RESISTIVE, INDUCTIVE 8 LOADS 6 4 2 0 0 2 4 6 8 10 12 14 16 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM MEDIUM POWER USE The product guaranteed maximum junction temperature 150°C (See warning.) INSULATED TYPE, PLANAR PASSIVATION TYPE CASE TEMPERATURE (°C) 160 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 140 120 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 2 6 0 4 8 10 12 14 AMBIENT TEMPERATURE (°C) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 16 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 CURVES APPLY REGARDLESS OF 120 CONDUCTION 100 ANGLE 120 120 t2.3 80 100 100 t2.3 60 RESISTIVE, 40 INDUCTIVE LOADS 20 NATURAL CONVECTION 0 2 6 0 4 40 20 HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 100 (%) 0 103 7 5 4 3 2 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 12 14 7 5 3 2 TYPICAL EXAMPLE 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 160 RMS ON-STATE CURRENT (A) JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. JUNCTION TEMPERATURE LACHING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 16 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 100 (%) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) 60 10 106 LACHING CURRENT (mA) AMBIENT TEMPERATURE (°C) 80 8 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION 140 NO FINS,CURVES APPLY REGARDLESS 120 OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE 100 LOADS 60 60 t2.3 103 7 5 3 2 DISTRIBUTION 102 7 5 3 2 101 7 5 3 2 T2+, G– TYPICAL EXAMPLE T2+, G+ TYPICAL T2– , G– EXAMPLE 100 –40 0 40 80 120 160 JUNCTION TEMPERATURE (°C) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM MEDIUM POWER USE The product guaranteed maximum junction temperature 150°C (See warning.) 160 TYPICAL EXAMPLE 140 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 160 TYPICAL EXAMPLE Tj = 125°C 120 100 80 60 III QUADRANT 40 20 I QUADRANT 0 1 2 10 2 3 5 7 10 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 150°C) COMMUTATION CHARACTERISTICS (Tj = 125°C) 160 TYPICAL EXAMPLE Tj = 150°C 120 100 80 60 40 III QUADRANT 20 I QUADRANT 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µ s) JUNCTION TEMPERATURE (°C) 7 5 3 2 SUPPLY VOLTAGE MAIN VOLTAGE (dv/dt)c 101 7 5 TIME VD MINIMUM CHARACTERISTICS VALUE 3 2 TYPICAL EXAMPLE Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz TIME (di/dt)c TIME MAIN CURRENT I QUADRANT III QUADRANT 100 7 0 10 2 3 5 7 101 2 3 5 7 102 RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s) RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) COMMUTATION CHARACTERISTICS (Tj = 150°C) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 7 5 3 2 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c 101 7 5 TIME (di/dt)c TIME TIME VD TYPICAL EXAMPLE Tj = 150°C IT = 4A τ = 500µs VD = 200V f = 3Hz I QUADRANT III QUADRANT 3 2 100 7 100 MINIMUM CHARACTERISTICS VALUE 2 3 5 7 101 2 3 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) 100 (%) BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 120 140 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µ s) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 125°C) 140 GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) INSULATED TYPE, PLANAR PASSIVATION TYPE 103 7 5 4 3 2 TYPICAL EXAMPLE IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µ s) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM MEDIUM POWER USE The product guaranteed maximum junction temperature 150°C (See warning.) INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω RECOMMENDED CIRCUIT VALUES AROUND THE TRIAC 6Ω LOAD A 6V RG V TEST PROCEDURE 1 C1 A 6V V RG TEST PROCEDURE 2 R1 C1 = 0.1~0.47µF R1 = 47~100Ω C0 R0 C0 = 0.1µF R0 = 100Ω 6Ω A 6V V RG TEST PROCEDURE 3 Mar. 2002