Total Dose Radiation Test Report MSK 4304RH 3 - Phase Motor Drive Hybrid June 14, 2007 (1st test) November 6, 2013 (2nd test: IC Wafer Lot: DJA6ENC Transistor Wafer Lot: BA1016MFA #16) B. Horton R. Wakeman M.S. Kennedy Corporation Liverpool, NY Page 1 of 23 I. Introduction: The total dose radiation test plan for the MSK 4304 RH was developed to qualify the devices as RAD Hard to 300 KRAD (Si). The testing was performed beyond 300 KRAD (Si) to show trends in device performance as a function of total dose. The test does not classify maximum radiation tolerance of the device, but simply offers designers insight to the critical parameter-shifts up to the specified total dose level. MIL-STD-883 Method 1019.7 and ASTM F1892-06 were used as guidelines in the development and implementation of the total dose test plan for the MSK 4304 RH. II. Radiation Source: Total dose was performed at the University of Massachusetts, Lowell, using a cobalt 60 radiation source. The dose rate was determined to be 88 Rads(Si)/sec. The total dose schedule can be found in Table I. III. Test Setup: All test samples were subjected to Group A Electrical Test at 25°C in accordance with the device data sheet. In addition, all devices received 320 hours of burn-in per MIL-STD-883 Method 1015. For test platform verification, one control device was tested at 25°C. Four devices (12 samples, See para. IV) were then tested at 25°C, prior to irradiation, and were found to be within acceptable test limits. The devices were vertically aligned with the radiation source and enclosed in a lead/aluminum container during irradiation. Two devices (six samples) were biased during irradiation. Two devices (six samples) had all leads grounded during irradiation for the unbiased condition. After each irradiation the device leads were shorted together and transported to the MSK automatic electrical test platform and tested IAW MSK device data sheet. Testing was performed on irradiated devices, as well as the control device, at each total dose level. Electrical tests were completed within one hour of irradiation. Devices were subjected to subsequent radiation doses within two hours of removal from the radiation field. IV. Data: Each device contains three identical and independently operating circuits. For each MSK4304RH tested the effective sample size is three. All performance curves are averaged from the test results of the biased and unbiased devices, respectively. If required, full test data can be obtained by contacting M.S. Kennedy Corporation. V. Summary: Based on the test data recorded during radiation testing, the MSK4304RH qualified as a 300 KRAD (Si) radiation hardened device. All performance curves stayed well within specification up to the maximum test dose, 450 KRAD (Si) TID Page 2 of 23 MSK 4304RH Biased/Unbiased Dose Rate Schedule Dosimetry Equipment Bruker Biospin # 0162 Irradiation Date 11/6/13 Exposure Incremental Dose Length rads(Si) (min:sec) 0:19:31 0:09:46 0:29:16 0:29:16 103,048 51,568 154,528 154,528 Cumulative Dose rads(Si) 103,048 154,616 309,144 463,672 Biased S/N – 0154, 0155 Unbiased S/N – 0156, 0157 Table 1 Dose Time, Incremental Dose and Total Cumulative Dose Page 3 of 23 Page 4 of 23 Page 5 of 23 Page 6 of 23 Page 7 of 23 Page 8 of 23 Page 9 of 23 Page 10 of 23 Page 11 of 23 Page 12 of 23 Total Dose Radiation Test Report MSK 4304RH 3 - Phase Motor Drive Hybrid June 14, 2007 J. Douglas B. Erwin M.S. Kennedy Corporation Liverpool, NY Page 13 of 23 I. Introduction: The total dose radiation test plan for the MSK 4304RH was developed to qualify the device as a radiation tolerant device to 300 Krad(Si). The testing was performed up to 450 Krad to show trends in device performance as a function of total dose. MIL-STD-883 Method 1019.7 and ASTM F1892-98 were used as guidelines in the development and implementation of the total dose test plan for the MSK 4304RH. II. Radiation Source: Total dose was performed at the University of Massachusetts, Lowell, using a cobalt 60 radiation source. Alanine dosimetry was performed and the dose rate was determined to be 118 Rads(Si)/sec. The total dose schedule can be found in Table I. III. Test Setup: All test samples were subjected to Group A Electrical Test in accordance with MSK4304RH Electrical Test Procedure 1702-12750 Rev -. In addition, all devices received 320 hours of burn-in per MIL-STD-883 Method 1015 and were electrically tested prior to irradiation. For test platform verification, one control device was tested at 25°C. The devices were vertically aligned with the radiation source and enclosed in a lead/aluminum container during irradiation. Four devices were kept under bias during irradiation. Four devices had all leads grounded during irradiation for the unbiased condition. After each irradiation the device leads were held electrically common and the devices were transported to the MSK electrical test platform and tested IAW the MSK 4304RH Electrical Test Procedure 1702-12750 Rev -. Testing was performed on irradiated devices, as well as the control device, at each total dose level. Electrical tests were completed within one hour of irradiation. IV. Data: All performance curves are averaged from the test results of the biased and unbiased devices respectively. V. Summary: Based on the test data recorded during radiation testing, the MSK 4304RH qualified as a 300 Krad(Si) radiation tolerant device. All test parameters stayed within specification up to and beyond 450 Krad(Si) TID. Page 14 of 23 Dosimetry Equipment: Bruker Biospin #0141 Dose Rate = 118 Rads(Si)/Sec Device Date Code 0721 Board Identification MSK 4304 GND Exposure Length (min:sec) Incremental Dose Rads(Si) 07:17 Testing Performed: 6/12/2007 Board Identification 4304 BIAS Cumulative Dose Rads(Si) Exposure Length (min:sec) Incremental Dose Rads(Si) Cumulative Dose Rads(Si) 51,556 51,556 07:17 51,556 51,556 07:17 51,556 103,132 07:17 51,556 103,132 07:17 51,556 154,698 07:17 51,556 154,698 07:17 51,556 206,264 07:17 51,556 206,264 14:33 103,014 309,278 14:33 103,014 309,278 14:33 103,014 412,292 14:33 103,014 412,292 14:33 103,014 515,306 14:33 103,014 515,306 Serial #’s: 3645, 3646, 3647 & 3648 Serial #’s: 3650, 3651, 3652 & 3654 Table I Dose Time, Incremental Dose and Total Cumulative Dos +Vcc current +Vcc = +15V 0.1 0.09 0.08 0.07 mA 0.06 Avg gnd Avg bias Control 0.05 0.04 0.03 0.02 0.01 0 0K 50K 100K 150K 200K 300K 400K 450K Total dose (rad(SI)) Page 15 of 23 +VB Current +VB = +15V 0.1 0.09 0.08 0.07 mA 0.06 Avg gnd Avg bias Control 0.05 0.04 0.03 0.02 0.01 0 0K 50K 100K 150K 200K 300K 400K 450K Total dose (rad(SI)) +VDD Current +VDD = +15V 4.9 4.7 mA 4.5 Avg gnd Avg bias Control 4.3 4.1 3.9 3.7 3.5 0K 50K 100K 150K 200K 300K 400K 450K Total Dose (rad(SI)) Page 16 of 23 UVLO 10.75 10.7 10.65 10.6 V 10.55 Avg gnd Avg bias Control 10.5 10.45 10.4 10.35 10.3 10.25 0K 50K 100K 150K 200K 300K 400K 450K Total dose (rad(SI)) High Side Leakage VD = 80V 3 2.5 uA 2 Avg gnd Avg bias Control 1.5 1 0.5 0 0K 50K 100K 150K 200K 300K 400K 450K Total Dose (rad(SI)) Page 17 of 23 Low Side Leakage VD = 80V 3 2.5 uA 2 Avg gnd Avg bias Control 1.5 1 0.5 0 0K 50K 100K 150K 200K 300K 400K 450K Total Dose (rad(SI)) High Side VDS(on) IDS = 10A 0.83 0.81 Avg gnd Avg Bias Control V 0.79 0.77 0.75 0.73 0K 50K 100K 150K 200K 300K 400K 450K Total Dose (rad(SI)) Page 18 of 23 Low Side VDS(on) IDS = 10A 0.55 0.53 Avg gnd Avg bias Control V 0.51 0.49 0.47 0.45 0K 50K 100K 150K 200K 300K 400K 450K Total Dose (rad(SI)) High Side Logic Low Input Threshold V 2.4 2.2 2 1.8 1.6 1.4 Avg gnd Avg bias Control 1.2 1 0.8 0K 50K 100K 150K 200K 300K 400K 450K Total Dose (rad(SI)) Page 19 of 23 V High Side Logic High Input Threshold 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 Avg gnd Avg bias Control 0K 50K 100K 150K 200K 300K 400K 450K Total Dose (rad(SI)) V Low Side Logic Low Input Threshold 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 Avg gnd Avg bias Control 0K 50K 100K 150K 200K 300K 400K 450K Total Dose (rad(SI)) Page 20 of 23 V Low Side Logic High Input Threshold 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 Avg gnd Avg bias Control 0K 50K 100K 150K 200K 300K 400K 450K Total Dose (rad(SI)) High Side Logic Input Current Vin = 0V 0 -0.5 uA -1 Avg gnd V = 0V Avg bias V = 0V Control -1.5 -2 -2.5 -3 0K 50K 100K 150K 200K 300K 400K 450K Total Dose (rad(SI)) Page 21 of 23 High Side Logic Input Current Vin = 5V 26 25.5 uA 25 Avg gnd V = 5V Avg bias V = 5V Control 24.5 24 23.5 23 0K 50K 100K 150K 200K 300K 400K 450K Total Dose (rad(SI)) Low Side Logic Input Current Vin = 0V 0 -0.5 uA -1 Avg gnd V = 0V Avg bias V = 0V Control -1.5 -2 -2.5 -3 0K 50K 100K 150K 200K 300K 400K 450K Total Dose (rad(SI)) Page 22 of 23 Low Side Logic Input Current Vin = 5V 26 25.5 uA 25 Avg gnd V = 5V Avg bias V = 5V Control 24.5 24 23.5 23 0K 50K 100K 150K 200K 300K 400K 450K Total Dose (rad(SI)) Page 23 of 23