Data Sheet Rev 1

IXD_609SI
Automotive Grade
9-Ampere, Low-Side, Ultrafast MOSFET Drivers
INTEGRATED CIRCUITS DIVISION
Features
Description
•
•
•
•
The IXD_609SI is an automotive grade, high-speed
gate driver that is qualified according to AEC Q100
standards. The IXD_609SI output can source and sink
9A of peak current, while producing rise and fall times
of less than 45ns. Both the output and input are rated
to 35V. The input is virtually immune to latch-up, and
proprietary circuitry eliminates cross conduction and
"shoot-through." The IXD_609SI has a Grade 1, -40°C
to +125°C ambient operating temperature range.
•
•
•
•
•
AEC Q100 Qualified
9A Peak Source/Sink Drive Current
Wide Operating Voltage Range: 4.5V to 35V
AEC Q100 Grade 1 -40°C to +125°C Operating
Temperature Range
Logic Input Withstands Negative Swing of up to 5V
Matched Rise and Fall Times
Low Propagation Delay Time
Low, 10A Supply Current
Low Output Impedance
Applications
•
•
•
•
Automotive DC/DC Regulators
Electronic Power Steering
Electric Vehicle Power Train Drives
Brushless DC Motors
The IXDD609SI is configured as a non-inverting driver
with an enable, the IXDN609SI is configured as a
non-inverting driver, and the IXDI609SI is configured
as an inverting driver. The AEC Q100 qualified
IXD_609SI is available in an 8-pin Power SOIC
package with an exposed metal back.
e3
Pb
Ordering Information
Logic
Configuration
Part Number
Package Type
IXDD609SI
IN
IXDD609SITR
IXDI609SI
IXDI609SITR
OUT
8-Pin Power SOIC
with Exposed Metal Back
IXDN609SI
IXDN609SITR
DS-IXD_609SI-R01
IN
Quantity
Tube
100
Tape & Reel
2000
Tube
100
Tape & Reel
2000
Tube
100
Tape & Reel
2000
OUT
EN
IN
Packing
Method
OUT
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1
INTEGRATED CIRCUITS DIVISION
IXD_609SI
1. Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.1 Pin Configurations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2 Pin Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.3 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.4 Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5 Electrical Characteristics: TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.6 Electrical Characteristics: TA = - 40°C to +125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.7 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
3
3
3
3
4
4
5
2. IXD_609SI Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2 Characteristics Test Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3. Block Diagrams & Truth Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.1 IXDD609SI. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.2 IXDI609SI. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.3 IXDN609SI. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
6
6
6
4. Typical Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5. Manufacturing Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5.1 Moisture Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5.2 ESD Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5.3 Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5.4 Mechanical Dimensions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
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10
10
10
10
11
R01
IXD_609SI
INTEGRATED CIRCUITS DIVISION
1 Specifications
1.1 Pin Configurations
1.2 Pin Definitions
IXDD609SI
Pin Name
VCC
1
8
VCC
IN
2
7
OUT
EN
3
6
OUT
GND
4
5
GND
Description
IN
Logic Input
EN
Output Enable - Drive pin low to disable output,
and force output to a high impedance state
OUT
Output - Sources or sinks current to turn-on or
turn-off a discrete MOSFET or IGBT
OUT
Inverted Output - Sources or sinks current to
turn-on or turn-off a discrete MOSFET or IGBT
VCC
Supply Voltage - Provides power to the device
GND
Ground - Common ground reference for the
device
IXDI609SI
VCC
1
8
VCC
IN
2
7
OUT
NC
3
6
OUT
GND
4
5
GND
NC
Not connected
IXDN609SI
VCC
1
8
VCC
IN
2
7
OUT
NC
3
6
OUT
GND
4
5
GND
1.3 Absolute Maximum Ratings
Parameter
Supply Voltage
Input Voltage
Output Current
Junction Temperature
Storage Temperature
Symbol
Minimum
Maximum
Units
VCC
-0.3
40
V
VIN, VEN
-5
VCC+0.3
V
IOUT
TJ
TSTG
-
±9
-55
+150
A
°C
-65
+150
°C
Unless stated otherwise, absolute maximum electrical ratings are at 25°C
Absolute maximum ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device.
Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not
implied.
1.4 Recommended Operating Conditions
Parameter
Supply Voltage
Operating Temperature Range
R01
Symbol
Range
Units
VCC
TA
4.5 to 35
V
-40 to +125
°C
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3
IXD_609SI
INTEGRATED CIRCUITS DIVISION
1.5 Electrical Characteristics: TA = 25°C
Test Conditions: 4.5V < VCC < 35V (unless otherwise noted).
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
Input Voltage, High
4.5V < VCC < 18V
VIH
3.0
-
-
Input Voltage, Low
4.5V < VCC < 18V
VIL
-
-
0.8
2/3VCC
-
±10
A
-
1/3VCC
V
Input Current
0V < VIN < VCC
IIN
EN Input Voltage, High
IXDD609SI only
VENH
EN Input Voltage, Low
IXDD609SI only
VENL
Output Voltage, High
-
VOH
VCC-0.025
-
-
Output Voltage, Low
-
VOL
-
-
0.025
Output Resistance, High State
VCC=18V, IOUT=-100mA
ROH
-
0.6
1
Output Resistance, Low State
ROL
-
0.4
0.8
IDC
-
-
±2
Rise Time
VCC=18V, IOUT=100mA
Limited by package power
dissipation
VCC=18V, CLOAD=10nF
tr
-
22
35
Fall Time
VCC=18V, CLOAD=10nF
tf
-
15
25
On-Time Propagation Delay
VCC=18V, CLOAD=10nF
tondly
-
40
60
Off-Time Propagation Delay
Enable to Output-High Delay Time
(IXDD609SI Only)
Disable to High Impedance State Delay Time
(IXDD609SI Only)
Enable Pull-Up Resistor
VCC=18V, CLOAD=10nF
toffdly
-
42
60
tENOH
-
25
60
tDOLD
-
35
60
REN
-
200
1
<1
<1
2
10
10
Output Current, Continuous
Power Supply Current
VCC=18V
VCC=18V
VCC=18V, VIN=3.5V
VCC=18V, VIN=0V
VCC=18V, VIN=VCC
ICC
Units
V
V

A
ns
k
mA
A
1.6 Electrical Characteristics: TA = - 40°C to +125°C
Test Conditions: 4.5V < VCC < 35V unless otherwise noted.
Conditions
Symbol
Minimum
Input Voltage, High
Parameter
4.5V < VCC < 18V
VIH
Maximum
3.3
-
Input Voltage, Low
4.5V < VCC < 18V
VIL
-
0.65
0V < VIN < VCC
IIN
-
VOH
VCC-0.025
±10
Output Voltage, High
Output Voltage, Low
-
VOL
-
0.025
Output Resistance, High State
VCC=18V, IOUT=-100mA
ROH
-
2
Output Resistance, Low State
ROL
-
1.5
IDC
-
±1
Rise Time
VCC=18V, IOUT=100mA
Limited by package power
dissipation
VCC=18V, CLOAD=10nF
tr
-
40
Fall Time
VCC=18V, CLOAD=10nF
tf
-
30
On-Time Propagation Delay
VCC=18V, CLOAD=10nF
tondly
-
75
Off-Time Propagation Delay
VCC=18V, CLOAD=10nF
toffdly
-
75
Enable to Output-High Delay Time
IXDD609SI only, VCC=18V
tENOH
-
75
Disable to High Impedance State Delay Time
IXDD609SI only, VCC=18V
VCC=18V, VIN=3.5V
VCC=18V, VIN=0V
VCC=18V, VIN=VCC
tDOLD
-
75
2.5
150
150
Input Current
Output Current, Continuous
Power Supply Current
4
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ICC
-
Units
V
A
V

A
ns
mA
A
R01
IXD_609SI
INTEGRATED CIRCUITS DIVISION
1.7 Thermal Characteristics
Package
SI (8-Pin Power SOIC)
Parameter
Symbol
Rating
Thermal Resistance, Junction-to-Ambient
JA
85
Thermal Resistance, Junction-to-Case
JC
10
Units
°C/W
2 IXD_609SI Performance
2.1 Timing Diagrams
VIH
IN
VIH
IN
VIL
tondly
VIL
toffdly
toffdly
tondly
90%
OUT
OUT
10%
90%
10%
tf
tr
tf
tr
2.2 Characteristics Test Diagram
+
0.1μF
10μF
OUT
VCC
EN
VIN
R01
VCC
IN
VCC
-
GND
CLOAD
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Tektronix
Current Probe
6302
5
IXD_609SI
INTEGRATED CIRCUITS DIVISION
3 Block Diagrams & Truth Tables
3.1 IXDD609SI
3.3 IXDN609SI
VCC
VCC
IN
OUT
IN
OUT
GND
EN
GND
IN
EN
OUT
IN
OUT
0
1 or open
0
0
0
1
1 or open
1
1
1
x
0
Z
3.2 IXDI609SI
VCC
OUT
IN
GND
6
IN
OUT
0
1
1
0
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R01
IXD_609SI
INTEGRATED CIRCUITS DIVISION
4 Typical Performance Characteristics
Rise Time vs. Supply Voltage
(Input=0-5V, f=10kHz, TA=25ºC)
60
60
CL=10nF
CL=5.4nF
CL=1.5nF
50
40
30
20
30
20
10
0
0
5
10
15
20
25
Supply Voltage (V)
30
CL=10nF
CL=5.4nF
CL=1.5nF
40
10
0
35
5
10
15
20
25
Supply Voltage (V)
VCC=4.5V
VCC=8V
VCC=12V
VCC=18V
VCC=25V
VCC=30V
VCC=35V
40
30
Fall Time (ns)
Rise Time (ns)
50
20
4000
6000
8000
Load Capacitance (pF)
-40 -20
35
40
30
0
20 40 60 80
Temperature (ºC)
100 120 140
20
150
toffdly
tondly
10000
0
2000
4000
6000
8000
Load Capacitance (pF)
Propagation Delay vs. Input Voltage
(VIN=5V, VCC=12V, f=1kHz, CL=5.4nF)
180
160
tondly
140
120
100
80
toffdly
60
40
20
30
Input Threshold Voltage
vs. Temperature
(VCC=18V, CL=2.5nF)
50
toffdly
45
40
tondly
35
30
2
35
10000
Propagation Delay
vs. Temperature
(VCC=18V, f=1kHz, CL=5.4nF)
55
0
10
15
20
25
Supply Voltage (V)
4
6
8
Input Voltage (V)
10
-40 -20
12
Input Threshold vs. Supply Voltage
0
20 40 60 80
Temperature (ºC)
100 120 140
Enable Threshold vs. Supply Voltage
3.5
25
2.7
2.6
2.5
Min VIH
2.4
2.3
2.2
2.1
Max VIL
2.0
3.0
Enable Threshold (V)
Input Threshold (V)
Input Threshold Voltage (V)
30
Propagation Delay (ns)
Propagation Delay vs. Supply Voltage
(VIN=0-5V, f=1kHz, CL=5.4nF)
Propagation Delay (ns)
Propagation Delay (ns)
2000
0
Min VIH
2.5
Max VIL
2.0
1.5
1.0
1.9
-40 -20
R01
6
0
0
2.8
tf
7
10
0
5
8
VCC=4.5V
VCC=8V
VCC=12V
VCC=18V
VCC=25V
VCC=30V
VCC=35V
50
10
0
tr
9
60
60
50
10
Fall Time vs. Load Capacitance
Rise Time vs. Load Capacitance
100
Rise and Fall Times vs. Temperature
(VIN=0-5V, VCC=18V, f=10kHz, CL=2.5nF)
5
0
70
200
11
50
Fall Time (ns)
Rise Time (ns)
Fall Time vs. Supply Voltage
(Input=0-5V, f=10kHz, TA=25ºC)
Rise & Fall Times (ns)
70
0
20 40 60 80
Temperature (ºC)
100 120 140
20
Min VENH
15
Max VENL
10
5
0
0
5
10
15
20
25
Supply Voltage (V)
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30
35
0
5
10
15
20
25
Supply Voltage (V)
30
35
7
IXD_609SI
INTEGRATED CIRCUITS DIVISION
300
200
100
0
1000
150
100
50
150
100
50
0
1000
10000
10000
Load Capacitance (pF)
Supply Current vs. Frequency
(VCC=18V)
Supply Current vs. Frequency
(VCC=12V)
Supply Current vs. Frequency
(VCC=8V)
1000
1
1000
CL=10nF
CL=5.4nF
CL=1.5nF
100
10
1
10
100
1000
Frequency (kHz)
10000
1
10
100
1000
Frequency (kHz)
1.0
0.8
0.6
0.4
0.2
VIN=0V & 18V
0
1
0.1
20 40 60 80
Temperature (ºC)
10000
1
10
100
1000
Frequency (kHz)
10000
0.60
0.55
0.50
0.45
0.40
0.35
-40 -20
100 120 140
Output Source Current
vs. Supply Voltage
(f=422Hz, CL=66nF)
-25
-20
-15
-10
-5
0
20 40 60 80
Temperature (ºC)
100 120 140
Output Sink Current
vs. Supply Voltage
(f=422Hz, CL=66nF)
30
Output Sink Current (A)
-30
Output Source Current (A)
0.65
VIN=3.5V
VIN=5V
VIN=10V
1.2
Supply Current (mA)
Supply Current (mA)
1.4
-40 -20
10
Dynamic Supply Current
vs. Temperature
(VIN=5V, VCC=18V, f=1kHz, CL=1.5nF)
Quiescent Supply Current
vs. Temperature
0.0
CL=10nF
CL=5.4nF
CL=1.5nF
100
0.01
0.1
0.1
25
20
15
10
5
0
0
0
8
f=2MHz
f=1MHz
f=500kHz
f=100kHz
f=50kHz
f=10kHz
f=1kHz
Load Capacitance (pF)
10
1
Supply Current vs. Load Capacitance
(VCC=8V)
Load Capacitance (pF)
CL=10nF
CL=5.4nF
CL=1.5nF
100
200
0
1000
10000
Supply Current (mA)
Supply Current (mA)
1000
200
f=2MHz
f=1MHz
f=500kHz
f=100kHz
f=50kHz
f=10kHz
f=1kHz
250
Supply Current (mA)
400
Supply Current vs. Load Capacitance
(VCC=12V)
Supply Current (mA)
f=2MHz
f=1MHz
f=500kHz
f=100kHz
f=50kHz
f=10kHz
f=1kHz
300
Supply Current (mA)
Supply Current (mA)
500
Supply Current vs. Load Capacitance
(VCC=18V)
5
10
15
20
25
Supply Voltage (V)
30
35
0
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5
10
15
20
25
Supply Voltage (V)
30
35
R01
IXD_609SI
INTEGRATED CIRCUITS DIVISION
Output Source Current
vs. Temperature
(VCC=18V, f=422Hz, CL=66nF)
14.0
Output Sink Current (A)
Output Source Current (A)
-12.0
-11.5
-11.0
-10.5
-10.0
-9.5
-9.0
-40 -20
13.0
12.5
12.0
11.5
11.0
10.5
100 120 140
-40 -20
1.0
0.5
0
20 40 60 80
Temperature (ºC)
100 120 140
Low State Output Resistance
vs. Supply Voltage
(IOUT= +10mA )
1.1
Output Resistance (Ω)
Output Resistance (Ω)
20 40 60 80
Temperature (ºC)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0
0
R01
13.5
10.0
0
High State Output Resistance
vs. Supply Voltage
(IOUT= -10mA)
1.5
Output Sink Current
vs. Temperature
(VCC=18V, f=422Hz, CL=66nF)
5
10
15
20
25
Supply Voltage (V)
30
35
0
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5
10
15
20
25
Supply Voltage (V)
30
35
9
IXD_609SI
INTEGRATED CIRCUITS DIVISION
5 Manufacturing Information
5.1 Moisture Sensitivity
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated
Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to the
latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product
evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee
proper operation of our devices when handled according to the limitations and information in that standard as well as
to any limitations set forth in the information or standards referenced below.
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced
product performance, reduction of operable life, and/or reduction of overall reliability.
This product carries a Moisture Sensitivity Level (MSL) rating of 1, and should be handled according to the
requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033.
5.2 ESD Sensitivity
This product is ESD Sensitive, and should be handled according to the industry standard
JESD-625.
5.3 Reflow Profile
This product has a maximum body temperature and time rating of 260°C for 30 seconds. All other guidelines of
J-STD-020 must be observed.
Pb
10
e3
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R01
IXD_609SI
INTEGRATED CIRCUITS DIVISION
5.4 Mechanical Dimensions
5.4.1 SI Package (8-Pin Power SOIC with Exposed Metal Back)
3.80
(0.150)
0.762 ± 0.254
(0.030 ± 0.010)
3.937 ± 0.254
(0.155 ± 0.010)
5.994 ± 0.254
(0.236 ± 0.010)
1.55
(0.061)
5.40
2.75
(0.209) (0.108)
Pin 1
0.406 ± 0.076
(0.016 ± 0.003)
4.928 ± 0.254
(0.194 ± 0.010)
0.60
(0.024)
1.27
(0.050)
1.270 REF
(0.050)
Recommended PCB Land Pattern
1.346 ± 0.076
(0.053 ± 0.003)
2.540 ± 0.254
(0.100 ± 0.010)
7º
0.051 MIN - 0.254 MAX
(0.002 MIN - 0.010 MAX)
Dimensions
mm
(inches)
3.556 ± 0.254
(0.140 ±0.010)
Note: The exposed metal pad on the back of the SI package should be connected to GND. It is not suitable for
carrying current.
5.4.2 Tape & Reel Information for SI Package
330.2 DIA.
(13.00 DIA.)
Top Cover
Tape Thickness
0.102 MAX.
(0.004 MAX.)
W=12.00
(0.472)
B0=5.30
(0.209)
K0= 2.10
(0.083)
A0=6.50
(0.256)
P=8.00
(0.315)
User Direction of Feed
Embossed Carrier
Embossment
Dimensions
mm
(inches)
NOTE: Tape dimensions not shown comply with JEDEC Standard EIA-481-2
For additional information please visit our website at: www.ixysic.com
IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make
changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated
Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its
products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe
property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice.
Specification: DS-IXD_609SI-R01
©Copyright 2013, IXYS Integrated Circuits Division
All rights reserved. Printed in USA.
2/5/2013
R01
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11