Power Module 1200V IGBT Family MG12300D-BN3MM Series 300A Dual IGBT RoHS ® Features • H igh short circuit capability, self limiting short circuit current • IGBT CHIP(1200V NPT technology) • V CE(sat) with positive temperature coefficient • F ast switching and short tail current • F ree wheeling diodes with fast and soft reverse recovery • Low switching losses Applications Agency Approvals AGENCY AGENCY FILE NUMBER E71639 • Motor drives • SMPS and UPS • Inverter • Welder • Converter • Induction Heating Module Characteristics (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max. Junction Temperature TJ max) Max Unit 150 °C TJ op Operating Temperature -40 125 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage AC, t=1min CTI Comparative Tracking Index Module case exposed to 0.1% ammonium chloride solution per UL and IEC standards 3000 V 350 V Torque Module-to-Sink Recommended (M6) 3 5 N·m Torque Module Electrodes Recommended (M6) 2.5 5 N·m Weight 320 g Unit Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values VCES Collector - Emitter Voltage TJ=25°C 1200 V VGES Gate - Emitter Voltage ±20 V IC DC Collector Current TC=25°C 450 A TC=75°C 300 A ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT IGBT tp=1ms 600 A 1450 W Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current It 2 TJ=25°C 1200 V TC=25°C 450 A TC=75°C 300 A tp=1ms 600 A TJ =125°C, t=10ms, VR=0V 14500 A 2s Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG12300D-BN3MM 1 ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:09/18/14 Power Module 1200V IGBT Family Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=12mA 4.5 5.5 6.5 V Collector - Emitter Saturation Voltage IC=300A, VGE=15V, TJ=25°C 3.2 V IC=300A, VGE=15V, TJ=125°C 3.85 V IGBT VGE(th) VCE(sat) ICES Collector Leakage Current IGES Gate Leakage Current RGint Intergrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time VCE=1200V, VGE=0V, TJ=25°C 2 mA VCE=1200V, VGE=0V, TJ=125°C 10 mA 400 μA VCE=0V,VGE=±15V, TJ=125°C VCE=600V, IC=300A , VGE=±15V VCE=25V, VGE=0V, f =1MHz VCC=600V IC=300A RG =3.3 Ω tf Fall Time Eon Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current VGE=±15V Inductive Load -400 1.3 Ω 3.2 μC 22 nF 1.0 nF TJ =25°C 110 ns TJ =125°C 120 ns TJ =25°C 70 ns TJ =125°C 80 ns TJ =25°C 550 ns TJ =125°C 600 ns TJ =25°C 50 ns TJ =125°C 60 ns TJ =25°C 18 mJ TJ =125°C 29 mJ TJ =25°C 14 mJ TJ =125°C 22 mJ 1200 A tpsc≤10μS , VGE=15V TJ=125°C,VCC=900V Junction-to-Case Thermal Resistance (Per IGBT) RthJC 0.085 K/W Diode IF=300A , VGE=0V, TJ =25°C 2.0 V IF=300A , VGE=0V, TJ =125°C 2.05 V Max. Reverse Recovery Current IF=300A , VR=-600V 300 A Reverse Recovery Time diF/dt=6000A/μs 350 ns Erec Reverse Recovery Energy TJ=125°C 15.2 mJ RthJCD Junction-to-Case Thermal Resistance (Per Diode) Forward Voltage VF IRRM trr MG12300D-BN3MM 0.15 2 K/W ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:09/18/14 Power Module 1200V IGBT Family Figure 1: Typical Output Characteristics Figure 2: Typical Output Characteristics 600 600 VGE =15V 500 400 400 TVj =25°C IC (A) IC (A) 500 300 200 100 0 0 2 1 0 3 4 VCE˄V˅ 5 6 Figure 3: T ypical Transfer characteristics 120 100 400 Eon Eoff (mJ) TVj =125°C 300 TVj =25°C 200 100 0 80 70 5 6 7 9 8 VGE˄V˅ 10 11 6 Eon 40 Eoff 0 2.5 5 10 7.5 RG˄Ω˅ 12.5 15 Figure 6: R everse Biased Safe Operating Area 700 VCE=600V RG=3.3Ω VGE=±15V TVj =125°C 600 500 50 400 IC (A) Eon 40 30 Eoff 300 RG=3.3Ω VGE=±15V TVj =125°C 200 20 100 10 MG12300D-BN3MM 5 60 0 12 60 0 0 80 20 Figure 5: Switching Energy vs. Collector Current 90 4 2 0 3 VCE˄V˅ VCE=600V IC=300A VGE=±15V TVj =125°C VCE =20V 500 1 Figure 4: Switching Energy vs. Gate Resistor 600 IC (A) TVj =125°C 200 TVj =125°C 10 Eon Eoff (mJ) 300 100 200 300 400 IC˄A˅ 500 0 600 3 0 200 400 600 800 1000 1200 1400 VCE˄V˅ ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:09/18/14 Power Module 1200V IGBT Family Figure 7: Diode Forward Characteristics Figure 8: S witching Energy vs. Gate Resistort 600 20 480 16 IF (A) Erec (mJ) TVj =25°C 360 TVj =125°C 12 8 240 4 120 0 0 0 2 VF˄V˅ 1 3 4 2.5 5 7.5 10 12.5 15 Figure 10: T ransient Thermal Impedance 24 20 0 RG˄Ω˅ Figure 9: Switching Energy vs. Forward Current 1 RG=3.3Ω VCE=600V TVj =125°C Diode ZthJC (K/W) 16 Erec (mJ) IF=300A VCE=600V TVj =125°C 12 8 0.1 IGBT 0.01 4 0 0 MG12300D-BN3MM 50 100 150 200 IF (A) 250 0.001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) 300 4 ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:09/18/14 Power Module 1200V IGBT Family Dimensions-Package D Circuit Diagram and Pin Assignment Packing Options Part Number Marking Weight Packing Mode M.O.Q MG12300D-BN3MM MG12300D-BN3MM 320g Bulk Pack 60 Part Marking System Part Numbering System MG12300D-BN3MM PRODUCT TYPE M: Power Module ASSEMBLY SITE MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200V WAFER TYPE CURRENT RATING PACKAGE TYPE 300: 300A MG12300D-BN3MM CIRCUIT TYPE B: 2x(IGBT+FWD) D: Package D 5 ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:09/18/14