TVS Diode Arrays (SPA® Diodes) Lightning Surge Protection - SLVU2.8-4 Series SLVU2.8-4 Series 2.8V 40A TVS Array RoHS Pb GREEN Description The SLVU2.8-4 was designed to protect low voltage, CMOS devices from ESD and lightning induced transients. There is a compensating diode in series with each low voltage TVS to present a low loading capacitance to the line being protected. These robust structures can safely absorb repetitive ESD strikes at ±30kV (contact discharge) per IEC61000-4-2 standard and each structure can safely dissipate up to 40A (IEC61000-4-5, tP=8/20μs) with very low clamping voltages. Features Pinout 4 3 2 1 • ESD, IEC61000-4-2, ±30kV contact, ±30kV air • Low leakage current of 1μA (MAX) at 2.8V • EFT, IEC61000-4-4, 40A (5/50ns) • SOIC-8 (JEDEC MO-012) pin configuration allows for simple flow-through layout • Lightning, IEC61000-4-5, 40A (8/20μs) • Low capacitance of 2pF per line Applications 5 6 7 8 • Analog Inputs • WAN/LAN Equipment • Base Stations • Switching Systems Functional Block Diagram Pin 1.3 • 10/100/1000 Ethernet Pin 6.8 • Desktops, Servers, and Notebooks Application Example Ethernet PHY Tx+ TxRx+ Rx- RJ-45 Connector J1 Pin 2.4 Pin 5.7 SLVU2.8-4 Additional Information Device is shown as transparent for actual footprint Datasheet Resources Samples J8 Case GND © 2014 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/22/14 TVS Diode Arrays (SPA® Diodes) Lightning Surge Protection - SLVU2.8-4 Series Electrical Characteristics (TOP = 25°C) Parameter Symbol Test Conditions VRWM IR≤1μA Reverse Breakdown Voltage VBR IT=2μA 3.0 V Snap Back Voltage VSB IT=50mA 2.8 V Reverse Leakage Current Reverse Standoff Voltage Min ILEAK VR=2.8V (Each Line) Clamping Voltage 1 VC IPP=5A, tP=8/20μs (Each Line) Clamping Voltage 1 VC IPP=24A, tP=8/20μs (Each Line) Typ V μA 7.0 8.5 V 13.9 15.0 V IEC61000-4-2 (Contact) ±30 kV IEC61000-4-2 (Air) ±30 kV VESD Dynamic Resistance RDYN (VC2 - VC1) / (IPP2 - IPP1) (Each Line) 0.4 CD VR=0V, f=1MHz (Each Line) 2.0 Diode Capacitance Units 2.8 1 ESD Withstand Voltage1 1 Max Ω 2.5 pF Note: 1Parameter is guaranteed by design and/or device characterization. Absolute Maximum Ratings Figure 1: Capacitance vs. Reverse Voltage Rating Units Peak Pulse Power (tP=8/20µs) 600 W Peak Pulse Current (tP=8/20µs) 40 A Operating Temperature –40 to 125 ºC Storage Temperature –55 to 150 ºC 4.0 3.5 CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Capacitance (pF) Parameter 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 DC Bias (V) Figure 2: Clamping Voltage vs. IPP Figure 3: Pulse Waveform 110% 14 100% 90% Percent of IPP Clamping Voltage-VC (V) 12 10 8 6 80% 70% 60% 50% 40% 30% 20% 4 10% 0% 0.0 2 0 0 5 10 15 Peak Pulse Current-IPP (A) © 2014 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/22/14 20 25 5.0 10.0 15.0 Time (μs) 20.0 25.0 30.0 TVS Diode Arrays (SPA® Diodes) Lightning Surge Protection - SLVU2.8-4 Series Soldering Parameters Product Characteristics Lead Plating Matte Tin Lead Material Copper Alloy Lead Coplanarity 0.0004 inches (0.102mm) Substitute Material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. All specifications comply to JEDEC SPEC MO-203 Issue A 5. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 6. Package surface matte finish VDI 11-13. Pb – Free assembly Reflow Condition Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 5°C/second max TS(max) to TL - Ramp-up Rate - Temperature (TL) (Liquidus) Reflow 5°C/second max 217°C 60 – 150 seconds - Temperature (tL) Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 5°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C tP Temperature TP Critical Zone TL to TP Ramp-up TL TS(max) tL Ramp-do Ramp-down Preheat TS(min) 25 tS time to peak temperature Time Package Dimensions — Mechanical Drawings and Recommended Solder Pad Outline Package SOIC-8 Pins 8 JEDEC MS-012 Millimetres Inches LF A 1.35 1.75 0.053 0.069 o A1 0.10 0.25 0.004 0.010 Min Recommended Soldering Pad Outline (Reference Only) Max Min Max A2 1.25 1.65 0.050 0.065 B 0.31 0.51 0.012 0.020 c 0.17 0.25 0.007 0.010 D 4.80 5.00 0.189 0.197 E 5.80 6.20 0.228 0.244 E1 3.80 4.00 0.150 0.157 1.27 BSC e L 0.40 0.050 BSC 1.27 0.016 0.050 © 2014 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/22/14 TVS Diode Arrays (SPA® Diodes) Lightning Surge Protection - SLVU2.8-4 Series Part Marking System Part Numbering System Marking Code SLVU2.8 -4 B T G G= Green T= Tape & Reel Package Series LF B = SOIC-8 Pin 1 No. of channels Voltage Level U2.8-4 XYYWW Date Code Marking X: Location YYWW: Date Code Ordering Information Part Number Package Marking Min. Order Qty. SLVU2.8-4BTG SOIC-8 U2.8-4 2500 Embossed Carrier Tape & Reel Specification — SOIC Package User Feeding Direction Symbol E Pin 1 Location Millimetres Min Max Min Max 1.65 1.85 0.065 0.073 F 5.4 5.6 0.213 0.22 P2 1.95 2.05 0.077 0.081 D 1.5 1.6 0.059 0.063 4.1 0.154 1.50 Min D1 P0 3.9 W 0.059 Min 40.0 ± 0.20 10P0 11.9 12.1 0.161 1.574 ± 0.008 0.468 0.476 P 7.9 8.1 0.311 0.319 A0 6.3 6.5 0.248 0.256 B0 5.1 5.3 0.2 0.209 K0 2 2.2 0.079 0.087 t © 2014 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/22/14 Inches 0.30 ± 0.05 0.012 ± 0.002