TVS Diode Arrays (SPA® Diodes) SESD Series Enhanced ESD Diode Arrays SESD Series Ultra Low Capacitance Discrete TVS RoHS Pb GREEN ELV Description The SESD Series Ultra Low Capacitance Discrete TVS provides unidirectional and bidirectional ESD protection for the world’s most challenging high speed serial interfaces. Ultra low capacitance permits excellent signal integrity on the most challenging consumer electronics interfaces, such as USB 3.1, HDMI 2.0, DisplayPort, and V-by-One®. Providing in excess of 20kV contact ESD protection (IEC61000-4-2) while maintaining extremely low leakage and dynamic resistance, offered in the industry’s most popular footprints (0402 and 0201), the SESD series sets higher standards for signal integrity and usability. Pinout Features • 0.13pF MAX bidirectional 0402 DFN 0201DFN • ESD, IEC61000-4-2, 1 1 • 0.25pF MAX unidirectional ±20kV contact, ±20kV air • Low clamping voltage of 10V @ IPP=2A (Bidirectional) (tP=8/20μs) 2 • Low profile 0201 and 0402 DFN packages • Facilitates excellent signal integrity • AEC-Q101 qualified • ELV Compliant 2 Applications Bottom View Functional Block Diagram • Ultra-high speed data lines • C onsumer, mobile and portable electronics • USB 3.1, 3.0, 2.0 • Tablet PC and external storage with high speed interfaces • HDMI 2.0, 1.4a, 1.3 1 1 • DisplayPort(TM) • Thunderbolt (Light Peak) • V-by-One® • LVDS interfaces 2 Unidirectional © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/26/15 2 Bidirectional • Applications requiring high ESD performance in small packages TVS Diode Arrays (SPA® Diodes) SESD Series Enhanced ESD Diode Arrays Absolute Maximum Ratings Symbol IPP Thermal Information Parameter Parameter Value Units Peak Current (tp=8/20μs) 2.0 A Storage Temperature Range TOP Operating Temperature -55 to 125 °C Maximum Junction Temperature TSTOR Storage Temperature -55 to 150 °C Maximum Lead Temperature (Soldering 20-40s) Rating Units -55 to 150 °C 150 °C 260 °C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Unidirectional Electrical Characteristics - (TOP=25°C) Typ Max Units Input Capacitance Parameter @ VR = 0V, f = 3GHz Test Conditions Min 0.20 0.25 pF Breakdown Voltage VBR @ IT=1mA 9.00 V Reverse Working Voltage Reverse Leakage Current IL @ VRWM=5.0V 25 Clamping Voltage VCL @ IPP=2.0A 9.20 ESD Withstand Voltage IEC61000-4-2 (Contact) ±20 IEC61000-4-2 (Air) ±20 7.0 V 50 nA V kV Bidirectional Electrical Characteristics - (TOP=25°C) Typ Max Units Input Capacitance Parameter @ VR = 0V, f = 3GHz Test Conditions Min 0.10 0.13 pF Breakdown Voltage VBR @ IT=1mA 9.80 Reverse Working Voltage -7.0 Reverse Leakage Current IL @ VRWM=5.0V 25 Clamping Voltage VCL @ IPP=2.0A 10.0 ESD Withstand Voltage IEC61000-4-2 (Contact) ±20 IEC61000-4-2 (Air) ±20 0 0 -5.0 -5.0 S21 Insertion Loss (dB) S21 Insertion Loss (dB) 7.0 V 50 nA V kV Insertion Loss Diagram - Bidirectional Insertion Loss Diagram - Unidirectional -10.0 -15.0 -20.0 -25.0 -30.0 1.E+06 V -10.0 -15.0 -20.0 -25.0 -30.0 1.E+07 1.E+08 Frequency (Hz) 1.E+09 1.E+10 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 Frequency (Hz) © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/26/15 TVS Diode Arrays (SPA® Diodes) SESD Series Enhanced ESD Diode Arrays Device IV Curve - Bidirectional 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 Current (mA) Current (mA) Device IV Curve - Unidirectional 0.0 -0.2 -0.4 0.0 -0.2 -0.4 -0.6 -0.6 -0.8 -0.8 -1.0 -1.0 -2 -1 0 1 2 3 4 5 6 7 8 9 -10 10 -8 -6 -4 -2 0 2 4 6 8 10 Voltage (V) Voltage (V) USB3.0 Eye Diagram 5.0 Gb/s, 1000mV differential, CPO Compliant Test Pattern Without SESD Device With SESD Device Soldering Parameters Pre Heat Pb – Free assembly - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds tP TP Temperature Reflow Condition Critical Zone TL to TP Ramp-up TL TS(max) tL Ramp-do Ramp-down Preheat TS(min) 25 tS time to peak temperature Time Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Product Characteristics of 0402 DFN Package Ramp-down Rate 6°C/second max Lead Plating Pre-Plated Frame Time 25°C to peak Temperature (TP) 8 minutes Max. Lead Material Copper Alloy Do not exceed 260°C Lead Coplanarity 0.0004 inches (0.102mm) Substrate material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/26/15 TVS Diode Arrays (SPA® Diodes) SESD Series Enhanced ESD Diode Arrays Package Dimensions — 0201 DFN A3 Symbol END VIEW 2 L1 PIN 1 ID C0.05 e K E L2 1 SIDE VIEW 1 TOP VIEW SIDE VIEW 2 BOTTOM VIEW Max Min Typ A 0.28 0.30 0.32 0.011 0.012 0.013 A1 0 - 0.05 0 - 0.002 0.010 0.102 ref. A1 END VIEW Max 0.004 ref. D 0.25 0.30 0.35 E 0.55 0.60 0.65 0.022 0.024 0.026 K 0.11 0.17 0.22 0.004 0.007 0.009 0.012 0.014 b 0.20 0.25 0.30 0.008 0.010 0.012 L1 0.13 0.18 0.23 0.005 0.008 0.009 L2 0.14 0.19 0.24 0.006 0.007 0.009 e A Inches Typ A3 b D Millimeters Min 0.356 BSC 0.014 BSC M 0.32 0.013 N 0.24 0.009 O 0.62 0.024 P 0.14 0.006 M P O N Package Dimensions — 0402 DFN A3 Symbol END VIEW b D Millimeters Typ Max Min Typ A 0.33 0.38 0.43 0.013 0.015 0.017 A1 0 - 0.05 0 - 0.002 0.65 0.022 0.024 0.026 A3 L K E e PIN 1 ID 0.125 x 45° SIDE VIEW1 TOP VIEW SIDE VIEW2 A A1 END VIEW BOTTOM VIEW Inches Min 0.13 ref. 0.60 Max 0.005 ref. D 0.55 E 0.95 1.00 1.05 0.037 0.039 0.041 K 0.35 0.40 0.45 0.014 0.016 0.018 b 0.45 0.50 0.55 0.018 0.020 0.022 L 0.20 0.25 0.30 0.008 0.010 0.012 e 0.65 BSC 0.026 BSC M 0.60 0.024 N 0.35 0.014 O 1.00 0.039 P 0.30 0.012 M P O N © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/26/15 TVS Diode Arrays (SPA® Diodes) SESD Series Enhanced ESD Diode Arrays Part Numbering System Part Marking System SESD xxxx X 1 x N 00x0 – xxx C Breakdown Voltage 090:9.0V (TYP) 098: 9.8V (TYP) SESD product Package 0201 0402 Input Capacitance 0010: 0.1pF (TYP) 0020: 0.2pF (TYP) DFN Package C C Unidirectional C Bidirectional No Common pin 1: one channel Directional U: Unidirectional B: Bidirectional Ordering Information Part Number Package Marking Ordering Part Number Components/Reel Quantity SESD0201X1UN-0020-090 0201 DFN I C RF2192-000 15000 SESD0201X1BN-0010-098 0201 DFN C RF2193-000 15000 SESD0402X1UN-0020-090 0402 DFN I C RF2943-000 10000 SESD0402X1BN-0010-098 0402 DFN C RF2945-000 10000 Embossed Carrier Tape & Reel Specification — 0201 DFN D0 T Y P0 P2 E1 D1 F B0 W K0 A0 Section Y - Y P1 Y Symbol Millimeters A0 B0 D0 D1 E1 F K0 P0 P1 P2 W T 0.36+/-0.03 0.66+/-0.03 ø 1.50 + 0.10/-0 ø 0.20 +/- 0.05 1.75+/-0.10 3.50+/-0.05 0.33+/-0.03 4.00+/-0.10 2.00+/-0.10 2.00+/-0.05 8.00 +/-0.10 0.23+/-0.02 Embossed Carrier Tape & Reel Specification — 0402 DFN D0 T Y P0 P2 E1 D1 F B0 K0 Section Y - Y A0 © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/26/15 Y P1 W Symbol Millimeters A0 B0 D0 D1 E1 F K0 P0 P1 P2 W T 0.70+/-0.05 1.15+/-0.05 ø 1.55 + 0.05 ø 0.40 +/- 0.05 1.75+/-0.10 3.50+/-0.05 0.47+/-0.05 4.00+/-0.10 2.00+/-0.10 2.00+/-0.05 8.00 +/-0.10 0.20+/-0.05