TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SP1008 Series SP1008 Series 6pF 15kV Bidirectional Discrete TVS Protection RoHS Pb GREEN Description The SP1008 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in the IEC61000-4-2 international standard (±15kV contact discharge) without performance degradation. The back-to-back configuration provides symmetrical ESD protection for data lines when AC signals are present. Pinout Features 1 2 Note: Drawing not to scale Functional Block Diagram • Low capacitance of 6pF (@ VR=5V) • EFT, IEC61000-4-4, 40A (5/50ns) • Low leakage current of 0.1μA at 5V • Lightning, IEC61000-4-5, 3A (tP=8/20μs) • Space efficient 0201 footprint Applications 2 1 • ESD, IEC61000-4-2, ±15kV contact, ±15kV air Additional Information • Mobile phones • Smart phones • MP3/PMP • External storage • PDA • Tablets • Camcorders • Digital cameras Application Example I/O Controller Keypads P1 Datasheet Resources Samples P2 Outside World P3 IC P4 SP1008 (x4) GND Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. © 2013 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/20/13 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SP1008 Series Absolute Maximum Ratings Symbol Parameter Value Units 3.0 A Operating Temperature –40 to 125 °C Storage Temperature –55 to 150 °C IPP Peak Current (tp=8/20μs) TOP TSTOR CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Storage Temperature Range Rating Units –55 to 150 °C Maximum Junction Temperature 150 °C Maximum Lead Temperature (Soldering 20-40s) 260 °C Electrical Characteristics (TOP=25ºC) Parameter Symbol Reverse Standoff Voltage VRWM Test Conditions Min Typ Max Units 6.0 V 8.5 V Breakdown Voltage VBR IR=1mA 7.0 Leakage Current ILEAK VR=5V with 1 pin at GND 0.1 μA IPP=1A, tp=8/20µs, Fwd 10.7 V IPP=2A, tp=8/20µs, Fwd 12.0 V (VC2 - VC1) / (IPP2 - IPP1) 1.3 W Clamp Voltage1 VC Dynamic Resistance RDYN ESD Withstand Voltage1 VESD Diode Capacitance 1 IEC61000-4-2 (Contact Discharge) ±15 kV IEC61000-4-2 (Air Discharge) ±15 kV CD Note: Parameter is guaranteed by design and/or device characterization. 1 © 2013 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/20/13 Reverse Bias=5.0V 6 9 pF TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SP1008 Series Capacitance vs. Reverse Bias Insertion Loss (S21) I/O to GND 0 10.0 Attenuation (dB) 9.0 I/O Capacitance (pF) 8.0 7.0 6.0 5.0 4.0 -5 -10 -15 -20 -25 -30 3.0 -35 2.0 -40 1.0 -45 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 10 I/O Bias Voltage (V) 100 Frequency (MHz) 1000 Clamping Voltage vs. IPP Pulse Waveform 110% 14 Clamp Voltage (VC) 100% 90% Percent of IPP 80% 70% 60% 50% 12 10 8 6 40% 30% 4 20% 2 10% 0% 0.0 5.0 10.0 15.0 20.0 25.0 0 30.0 1.0 Time (μs) Soldering Parameters Pre Heat 1.5 Pb – Free assembly - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds 260 Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds 1.5 tP Critical Zone TL to TP Ramp-up TL TS(max) tL Ramp-do Ramp-down Preheat TS(min) 25 Peak Temperature (TP) +0/-5 2.5 1.5 TP Temperature Reflow Condition 1.5 2.0 Peak Pulse Current-IPP (A) tS time to peak temperature Time °C Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C © 2013 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/20/13 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SP1008 Series Part Numbering System Ordering Information SP 1008 – 01 W T G TVS Diode Arrays (SPA® Diodes) Part Number Package Marking Min. Order Qty. SP1008-01WTG 0201 Flipchip X 10000 G= Green T= Tape & Reel Part Marking System Series Package W: 0201 Flipchip Number of Channels x Package Dimensions — 0201 Flip Chip 0201 Flipchip A Symbol B F C G E D D Millimeters Inches Min Typ Max Min Typ Max A 0.595 0.620 0.645 0.0234 0.0244 0.0254 B 0.295 0.320 0.345 0.0116 0.0126 0.0136 C 0.245 0.275 0.305 0.0096 0.0108 0.0120 D 0.145 0.150 0.155 0.0057 0.0059 0.0061 E 0.245 0.250 0.255 0.0096 0.0098 0.0100 F 0.245 0.250 0.255 0.0096 0.0098 0.0100 G 0.005 0.010 0.015 0.0002 0.0004 0.0006 Embossed Carrier Tape & Reel Specification — 0201 Flipchip P1 P2 D P0 0.30 E 0.28 F W 0.75 0.19 D1 T *Sizes in mm A0 K0 B0 © 2013 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/20/13 Recommended Solder Pad Footprint Symbol Millimeters A0 0.41±0.03 B0 0.70±0.03 D ø 1.50 + 0.10 D1 ø 0.20 ± 0.05 E 1.75±0.10 F 3.50±0.05 K0 0.38±0.03 P0 2.00±0.05 P1 2.00±0.05 P2 4.00±0.10 W 8.00 + 0.30 -0.10 T 0.23±0.02