TVS Diode Arrays (SPA® Diodes) Diodes) Low Capacitance ESD and Surge Protection - SP1255P Series SP1255P Series 0.5pF, 12kV Diode Array for μUSB RoHS Pb GREEN Description The SP1255P integrates 3 channels of ultra-low capacitance steering diodes and a low voltage TVS diode to provide maximum protection of the USB data and ID pins against ESD per the IEC61000-4-2 standard. An additional 12V TVS diode is included to provide lightning surge protection for the USB VBUS pin up to 100A (tP=8/20μs) per the IEC610004-5 standard. The SP1255P provides superior protection for current intensive applications such as fast charging peripharals. The SP1255P comes in a space saving 2.0x1.8mm μDFN package with a typical height of 0.55mm making it an ideal solution for smart phones, tablets, and other portable electronics. Pinout Features For USB Voltage Bus Pin (VBUS) AEC-Q101 qualified • ESD, IEC61000-4-2, ±30kV contact, ±30kV air • EFT, IEC61000-4-4, 80A (tP=5/50ns) • Lightning, IEC61000-4-5, 100A (tP=8/20μs) • Protection for VBUS operating up to 12V • Benchmark setting protection • High current handling capability for fast charging applications For USB Data Pin (D+, D-, ID) • ESD, IEC61000-4-2, ±12kV contact, ±15kV air • EFT, IEC61000-4-4, 40A (tP=5/50ns) • Lightning, IEC61000-4-5, 4A (tP=8/20μs) Bottom View • 0.5pF capacitance • Low clamping voltage and dynamic resistance (0.3Ω) Functional Block Diagram Applications PIN 1 (VBUS ) • USB OTG • μUSB PIN 2 (D+) PIN 3 (D-) PIN 4 (ID) • Protection for the VBUS circuit on USB2.0 Fast Charging PIN 5,6 (GND) Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/17/15 • USB 2.0 TVS Diode Arrays (SPA®® Diodes) Low Capacitance ESD and Surge Protection - SP1255P Series Symbol Parameter IPP (Pin 1) Peak Current (tp=8/20μs) Value Units 100 A IPP (Pin 2-4) Peak Current (tp=8/20μs) 4 A TOP Operating Temperature -40 to 125 °C TSTOR Storage Temperature -55 to 150 °C SP3012 Absolute Maximum Ratings CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions Min Typ Max Units 12 V 13.0 13.5 16.5 V 0.1 µA 0.6 0.7 1.0 V USB VBUS (Pin 1) Reverse Standoff Voltage VRWM Pin 1 to GND Reverse Breakdown Voltage VBR IT=1mA, Pin 1 to GND Reverse Leakage Current ILEAK VR=12V, Pin 1 to GND Forward Voltage VF IF=10mA, GND to Pin 1 Clamp Voltage1 VC ESD Withstand Voltage1 VESD Diode Capacitance IPP=30A, tp=8/20µs, Fwd 16.5 18 V IPP=100A, tp=8/20µs, Fwd 19.5 25 V IEC61000-4-2 (Contact) ±30 kV IEC61000-4-2 (Air) ±30 kV CD Reverse Bias=0V, f=1MHz VRWM Pin 2, 3 and 4 to GND VBR IT=2µA, Pin 2, 3 and 4 to GND 1 1300 2500 pF 4 V 7.5 V USB D+, D-, ID (Pin 2, 3, 4) Reverse Standoff Voltage Reverse Breakdown Voltage Reverse Leakage Current ILEAK Clamp Voltage1 RDYN ESD Withstand Voltage1 VESD Diode Capacitance1 6.0 0.02 VR=4V, Pin 2, 3 and 4 to GND 0.1 IPP=1A, tp=8/20µs, Fwd 6.6 8.0 IPP=2A, tp=8/20µs, Fwd 7.0 8.5 TLP, tP=100ns, Pin 2, 3 and 4 to GND2 0.3 VC Dynamic Resistance 4.5 VR=2V, Pin 2, 3 and 4 to GND CI/O-GND IEC61000-4-2 (Contact) ±12 IEC61000-4-2 (Air) ±15 µA V V Ω kV kV Reverse Bias=0V, f=1MHz 0.5 0.6 pF Note: 1 Parameter is guaranteed by design and/or device characterization. 2 Transmission Line Pulse (TLP) Test Setting: tP=100ns, tr=0.2ns ITLP and VTLP averaging window: star t1=70ns to t2=90ns Capacitance vs. Reverse Bias (Pin1 to GND) Capacitance vs. Reverse Bias (Pin2, 3, 4 to GND) 1100 1 1000 900 0.8 700 Capacitance (pF) Capacitance (pF) 800 600 500 400 300 200 100 0 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 Bias Voltage (V) 9 10 11 12 0 0.5 1 1.5 2 2.5 3 3.5 4 Bias Voltage (V) © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/17/15 TVS Diode Arrays (SPA® Diodes) Diodes) Low Capacitance ESD and Surge Protection - SP1255P Series Non-Repetitive Peak Pulse Power vs. Pulse Duration (Pin1 to GND) Non-Repetitive Peak Pulse Power vs. Pulse Duration (Pin2, 3, 4 to GND) 1000 P eak Pulse Power - P pp (W) P eak Pulse Power - P (kW) pp 100 10 1 0.1 0.1 1 10 100 1 1000 100 10 0.1 1 P ulse Duration tp(µs) Clamping Voltage vs. Peak Pulse Current (Pin1 to GND) 100 1000 Clamping Voltage vs. Peak Pulse Current (Pin2, 3, 4 to GND) 28.0 12.0 24.0 10.0 Clamp Voltage (V ) C Clamp Voltage (VC ) 10 Pulse Duration - tp( µs) 20.0 16.0 12.0 8.0 8.0 6.0 4.0 2.0 4.0 0.0 0.0 0.0 20.0 40.0 60.0 80.0 1.0 100.0 3.0 4.0 5.0 Peak Pulse Current - I PP (A) Peak Pulse Current - I PP (A) Positive Transmission Line Pulsing (TLP) Plot (Pin 2, 3, 4 to GND ) Negative Transmission Line Pulsing (TLP) Plot (Pin 2, 3, 4 to GND ) 16 0 14 -2 12 -4 10 -6 TLP Current (A) TLP Current (A) 2.0 8 6 4 -8 -10 -12 -14 2 -16 0 0 2 4 6 TLP Volts (V) © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/17/15 8 10 12 -6 -5 -4 -3 TLP Volts (V) -2 -1 0 TVS Diode Arrays (SPA®® Diodes) Low Capacitance ESD and Surge Protection - SP1255P Series Soldering Parameters Pre Heat Pb – Free assembly - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C Part Numbering System tL Ramp-do Ramp-down Preheat TS(min) tS time to peak temperature Time Product Characteristics SP 1255P U T G TVS Diode Arrays (SPA® Diodes) G= Green T= Tape & Reel Series Critical Zone TL to TP Ramp-up TL TS(max) 25 Peak Temperature (TP) tP TP Temperature Reflow Condition Package U=µDFN-6 Lead Plating Pre-Plated Frame Lead Material Copper Alloy Lead Coplanarity 0.0004 inches (0.102mm) Substrate material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 Notes : 1. All dimensions are in millimeters Part Marking System 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. A G3 Product Series A = SP1255P 5. Package surface matte finish VDI 11-13. Assembly Site Ordering Information Part Number Package Marking SP1255PUTG µDFN-6 A G3 Min. Order Qty. Packaging Option P0/P1 3000 Tape & Reel – 8mm tape/7” reel 2mm/4mm Packaging Specification EIA RS-481 © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/17/15 TVS Diode Arrays (SPA® Diodes) Diodes) Low Capacitance ESD and Surge Protection - SP1255P Series Package Dimensions — µDFN-6 (1.8x2.0x0.55mm) Top View µDFN6 (1.8x2.0x0.55mm) JEDEC MO-229 C J N Side View G P Y Z Recommended Soldering Footprint Bottom View Inches Min Nom Max Min Nom Max A 0.50 0.55 0.60 0.020 0.022 0.024 A1 0.00 - 0.05 0.000 - 0.002 0.15 Ref A3 F X Millimeters Symbol B 0.006 Ref D 1.75 1.80 1.85 0.069 0.071 0.073 E 1.95 2.00 2.05 0.077 0.079 0.081 b 0.15 0.20 0.25 0.006 0.008 0.010 L 0.20 0.30 0.40 0.008 0.012 0.016 D2 0.35 0.45 0.55 0.014 0.018 0.022 E2 0.74 0.84 0.94 0.029 0.033 0.037 e 0.40 BSC 0.016 BSC e1 0.80 BSC 0.031 BSC B 0.80 BSC 0.031 BSC C 0.35 0.45 0.55 0.014 0.018 0.022 F 0.81 0.84 0.87 0.032 0.033 0.034 G 0.82 0.85 0.88 0.032 0.033 0.034 J 0.24 0.25 0.26 0.010 0.010 0.010 N 0.47 0.48 0.49 0.018 0.019 0.020 P 0.24 0.25 0.26 0.010 0.010 0.010 X 0.23 0.24 0.25 0.009 0.009 0.009 Y 0.35 0.36 0.37 0.014 0.014 0.014 Z 0.62 0.64 0.66 0.024 0.025 0.026 Notes: 1. Dimension and tolerancing comform to ASME Y14.5M-1994. 2. Controlling dimensions: Millimeter. Converted Inch dimensions are not necessarily exact. P2 E ø70.55 D0 ø155.37 P0 ø13.22 P1 ø179.90 22.12 Embossed Carrier Tape & Reel Specification — µDFN-6 F W 1.46 D1 24.32 1.11 9.04 5 T Pin1 Location K0 © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/17/15 B0 5 ø58.11 ø15.57 A0 Symbol Millimeters A0 1.95 +/- 0.05 B0 2.30 +/- 0.05 D0 1.50 + 0.10 D1 Ø 0.60 + 0.05 E 1.75 +/- 0.10 F 3.50 +/- 0.05 K0 0.75 +/- 0.05 P0 2.00 +/- 0.05 P1 4.00 +/- 0.10 P2 4.00 +/- 0.10 T 0.25 +/- 0.02 W 8.00 + 0.30 /- 0.10