Power Module 1200V 75A IGBT Module MG1275W-XBN2MM RoHS Features igh level of • H integration—only one power semiconductor module required for the whole drive ree wheeling diodes • F with fast and soft reverse recovery ow saturation voltage • L and positive temperature coefficient • Industry standard package with insulated copper base plate and soldering pins for PCB mounting ast switching and short • F tail current emperature sense • T included Applications • AC motor control • Motion/servo control • Inverter and power supplies Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max. Junction Temperature TJ max) Max Unit 150 °C TJ op Operating Temperature -40 125 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage CTI Comparative Tracking Index Md Mounting Torque AC, t=1min 3000 V 250 Recommended (M5) Weight 2.5 5 N·m 300 g Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit TJ=25°C 1200 V ±20 V TC=25°C 105 A TC=80°C 75 A tp=1ms 150 A 348 W IGBT VCES Collector - Emitter Voltage VGES Gate - Emitter Voltage IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t MG1275W-XBN2MM TJ=25°C 1200 V TC=25°C 105 A TC=80°C 75 A tp=1ms 150 A TJ =125°C, t=10ms, VR=0V 1150 A2s 256 1 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 75A IGBT Module Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=3.0mA 5.0 5.8 6.5 V Collector - Emitter IC=75A, VGE=15V, TJ=25°C 1.7 V Saturation Voltage IC=75A, VGE=15V, TJ=125°C 1.9 V IGBT VGE(th) VCE(sat) IICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) VCE=1200V, VGE=0V, TJ=25°C 1 mA VCE=1200V, VGE=0V, TJ=125°C 10 mA 400 nA VCE=0V, VGE=±15V, TJ=125°C VCE=600V, IC=75A , VGE=±15V VCE=25V, VGE=0V, f =1MHz Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time IC=75A tf Fall Time VGE=±15V VCC=600V RG =4.7Ω Inductive Load Eon Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current RthJC -400 10 Ω 0.7 μC 5.3 nF 0.2 nF TJ=25°C 260 ns TJ=125°C 290 ns TJ=25°C 30 ns TJ=125°C 50 ns TJ=25°C 420 ns TJ=125°C 520 ns TJ=25°C 70 ns TJ=125°C 90 ns TJ=25°C 6.6 mJ TJ=125°C 9.4 mJ TJ=25°C 6.8 mJ TJ=125°C 8.0 mJ tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V 300 Junction-to-Case Thermal Resistance (Per IGBT) A 0.36 K/W Diode VF Forward Voltage tRR Reverse Recovery Time IRRM Max. Reverse Recovery Current Erec Reverse Recovery Energy RthJCD MG1275W-XBN2MM IF=75A, VGE=0V, TJ =25°C 1.65 V IF=75A, VGE=0V, TJ =125°C 1.65 V IF=75A, VR=600V diF/dt=2000A/µs TJ=125°C 300 ns Junction-to-Case Thermal Resistance (Per Diode) 257 2 85 A 6.5 mJ 0.6 K/W ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 75A IGBT Module Diode-Rectifier Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit VRRM Repetitive Reverse Voltage TJ=25°C 1600 V IF(AV) Average Forward Current TC=80°C 75 A IFRM Non-Repetitive Surge Forward Current TJ=45°C, t=10ms, 50Hz 450 TJ=45°C, t=8.3ms, 60Hz 400 TJ=45°C, t=10ms, 50Hz 1012 TJ=45°C, t=8.3ms, 60Hz 800 I2t A A 2s Diode-Rectifier Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) Symbol Parameters VF Forward Voltage IR Reverse Leakage Current RthJCD Junction-to-Case Thermal Resistance (Per Diode) Test Conditions Min Typ Max Unit IF=75A, TJ =25°C 1.25 V IF=75A, TJ =125°C 1.15 V VR=1600V, TJ =25°C 50 μA VR=1600V, TJ =125°C 1 mA 0.66 K/W Brake-Chopper Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit TJ=25°C 1200 V ±20 V TC=25°C 55 A TC=80°C 40 A tp=1ms 80 A 195 W TJ=25°C 1200 V TC=25°C 35 A TC=80°C 25 A IGBT VCES Collector - Emitter Voltage VGES Gate - Emitter Voltage IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t MG1275W-XBN2MM tp=1ms 50 A TJ =125°C, t=10ms, VR=0V 200 A 2s 258 3 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 75A IGBT Module Brake-Chopper Electrical and Thermal Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=1.5mA 5.0 5.8 6.5 V Collector - Emitter IC=40A, VGE=15V, TJ=25°C 1.8 V Saturation Voltage IC=40A, VGE=15V, TJ=125°C 2.05 V IGBT VGE(th) VCE(sat) IICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time VCE=1200V, VGE=0V, TJ=25°C VCE=1200V, VGE=0V, TJ=125°C VCE=0V, VGE=±15V, TJ=125°C VCE=600V, IC=40A , VGE=±15V VCE=25V, VGE=0V, f =1MHz VCC=600V IC=40A RG =27Ω tf Fall Time VGE=±15V Inductive Load Eon Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current RthJC Junction-to-Case Thermal Resistance (Per IGBT) -400 0.25 μA 2 mA 400 nA 6 Ω 0.33 μC 2.5 nF 0.11 nF TJ =25°C 90 ns TJ =125°C 90 ns TJ =25°C 30 ns TJ =125°C 50 ns TJ =25°C 420 ns TJ =125°C 520 ns TJ =25°C 70 ns TJ =125°C 90 ns TJ =25°C 4.1 mJ TJ =125°C 6.0 mJ TJ =25°C 3.1 mJ TJ =125°C 3.6 mJ 160 A tpsc≤10μS, VGE=15V; TJ=125°C, VCC=900V 0.62 K/W Diode Forward Voltage VF tRR Reverse Recovery Time IRRM Max. Reverse Recovery Current Erec Reverse Recovery Energy RthJCD Junction-to-Case Thermal Resistance (Per Diode) IF=25A , VGE=0V, TJ =25°C 1.55 V IF=25A , VGE=0V, TJ =125°C 1.54 V IF=25A, VR=600V diF/dt=-400A/µs TJ=125°C 200 ns 20 A 1.5 mJ 1.22 K/W Max Unit NTC Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions R25 Resistance Tc=25°C B25/50 MG1275W-XBN2MM 259 4 Min Typ 5 KΩ 3375 K ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 75A IGBT Module Figure 1: Typical Output Characteristics for IGBT Inverter Figure 2: Typical Output Characteristics for IGBT Inverter 150 150 VGE =19V VGE =17V VGE =15V VGE =13V VGE =11V VGE = 9V VGE =15V 120 Tj =25°C 90 IC (A) IC (A) 120 60 90 TJ =125°C 60 Tj =125°C 30 30 0 0 0.5 1.0 1.5 2.0 VCE˄V˅ 2.5 3.0 0 3.5 Figure 3: T ypical Transfer Characteristics for IGBT Inverter 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE˄V˅ Figure 4: Switching Energy vs. Gate Resistor for IGBT Inverter 150 25 VCE=600V IC=75A VGE=±15V Tj =125°C VCE =20V 20 Tj =25°C 90 60 Eon Eoff (mJ) IC (A) 120 Tj =125°C 0 5 6 7 9 8 VGE˄V˅ 10 11 10 0 12 Figure 5: Switching Energy vs. Collector Current for IGBT Inverter 30 25 Eoff 10 20 30 RG˄Ω˅ 40 50 180 VCE=600V RG=4.7Ω VGE=±15V Tj =125°C 150 120 20 15 Eon 10 90 RG=4.7Ω VGE=±15V Tj =125°C 60 Eoff 30 5 0 0 0 Figure 6: Reverse Biased Safe Operating Area for IGBT Inverter IC (A) Eon Eoff (mJ) 15 5 30 MG1275W-XBN2MM Eon 30 60 90 IC˄A˅ 120 0 150 260 5 0 200 400 600 800 1000 1200 1400 VCE˄V˅ ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 75A IGBT Module Figure 7: Diode Forward Characteristics for Diode Inverter Figure 8: Switching Energy vs. Gate Resistort for Diode Inverter 150 10.0 8.0 Erec (mJ) IF (A) 120 IF=75A VCE=600V Tj =125°C 90 60 6.0 4.0 Tj =125°C 30 2.0 Tj =25°C 0 0 0.5 1.0 1.5 V ˄V˅ 2.0 0 2.5 0 10 20 F Figure 9: Switching Energy vs. Forward Current for Diode Inverter 1 RG=4.7Ω VCE=600V Tj =125°C Diode ZthJC (K/W) Erec (mJ) 50 40 Figure 10: Transient Thermal Impedance of Diode and IGBT Inverter 10.0 8.0 30 RG˄Ω˅ 6.0 4.0 IGBT 0.1 2.0 0 0 30 60 90 120 0.01 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) 150 IF (A) Figure 11: Diode Forward Characteristics for IGBT Inverter Figure 12: Typical Output Characteristics for IGBT Brake Chopper 80 150 VGE =15V 125 60 Tj =25°C 75 IC (A) IF (A) 100 Tj =125°C 40 Tj =125°C 50 20 25 0 MG1275W-XBN2MM Tj =25°C 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF˄V˅ 261 6 0.5 1.0 1.5 2.0 VCE˄V˅ 2.5 3.0 3.5 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 75A IGBT Module Figure 13: Diode Forward Characteristics for Diode Brake Chopper Figure 14: NTC Characteristics 50 100000 IFGE =25=15V A V VCE=600V TVj =125°C 40 10000 20 Tj =125°C 10 0 TVj =25°C R (¡) IF (A) 30 R TVj =125°C 1000 Tj =25°C 0 0.5 1.0 2.0 1.5 VF˄V˅ 2.5 100 0 3.0 20 40 60 80 100 120 140 160 TC˄°C˅ Circuit Diagram Part Marking System Part Numbering System MG1275 W-XBN2MM PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200V CURRENT RATING 75: 75A MG1275W-XBN2MM ASSEMBLY SITE WAFER TYPE MG1275W-XBN2MM CIRCUIT TYPE XB: XB LOT NUMBER PACKAGE TYPE Space reserved for QR code W: Package W 262 7 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 75A IGBT Module Packing Options Part Number Marking Weight Packing Mode M.O.Q MG1275W-XBN2MM MG1275W-XBN2MM 300g Bulk Pack 20 Dimensions-Package W $ Ø Dimensions (mm) MG1275W-XBN2MM 263 8 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14