DS18B20

10/24/2005
PRODUCT RELIABILITY REPORT
FOR
DS18B20, Rev C3
Dallas Semiconductor
4401 South Beltwood Parkway
Dallas, TX 75244-3292
Prepared by:
Don Lipps
Staff Reliability Engineer
Dallas Semiconductor
4401 South Beltwood Pkwy.
Dallas, TX 75244-3292
Email : [email protected]
ph: 972-371-3739
fax: 972-371-6016
Conclusion:
The following qualification successfully meets the quality and reliability standards required of all Dallas
Semiconductor products:
DS18B20, Rev C3
In addition, Dallas Semiconductor's continuous reliability monitor program ensures that all outgoing
product will continue to meet Maxim's quality and reliability standards. The current status of the
reliability monitor program can be viewed at http://www.maxim-ic.com/TechSupport /dsreliability.html.
Device Description:
A description of this device can be found in the product data sheet. You can find the product data
sheet at http://dbserv.maxim-ic.com/l_datasheet3.cfm.
Reliability Derating:
The Arrhenius model will be used to determine the acceleration factor for failure mechanisms that are
temperature accelerated.
AfT = exp((Ea/k)*(1/Tu - 1/Ts)) = tu/ts
AfT = Acceleration factor due to Temperature
tu = Time at use temperature (e.g. 55°C)
ts = Time at stress temperature (e.g. 125°C)
k = Boltzmann‚Äôs Constant (8.617 x 10-5 eV/°K)
Tu = Temperature at Use (°K)
Ts = Temperature at Stress (°K)
Ea = Activation Energy (e.g. 0.7 ev)
The activation energy of the failure mechanism is derived from either internal studies or industry
accepted standards, or activation energy of 0.7ev will be used whenever actual failure mechanisms or
their activation energies are unknown. All deratings will be done from the stress ambient temperature
to the use ambient temperature.
An exponential model will be used to determine the acceleration factor for failure mechanisms, which
are voltage accelerated.
AfV = exp(B*(Vs - Vu))
AfV = Acceleration factor due to Voltage
Vs = Stress Voltage (e.g. 7.0 volts)
Vu = Maximum Operating Voltage (e.g. 5.5 volts)
B = Constant related to failure mechanism type (e.g. 1.0, 2.4, 2.7, etc.)
The Constant, B, related to the failure mechanism is derived from either internal studies or industry
accepted standards, or a B of 1.0 will be used whenever actual failure mechanisms or their B are
unknown. All deratings will be done from the stress voltage to the maximum operating voltage.
Failure rate data from the operating life test is reported using a Chi-Squared statistical model at the
60% or 90% confidence level (Cf).
The failure rate, Fr, is related to the acceleration during life test by:
Fr = X/(ts * AfV * AfT * N * 2)
X = Chi-Sq statistical upper limit
N = Life test sample size
Failure Rates are reported in FITs (Failures in Time) or MTTF (Mean Time To Failure). The FIT rate is
related to MTTF by:
MTTF = 1/Fr
NOTE: MTTF is frequently used interchangeably with MTBF.
The calculated failure rate for this device/process is:
FAILURE RATE:
MTTF (YRS): 25120
FITS: 4.5
The parameters used to calculate this failure rate are as follows:
Cf: 60%
Ea: 0.7
B: 0
Tu: 25
°C
Vu: 5.5
Volts
The reliability data follows. A the start of this data is the device information. The next section is the
detailed reliability data for each stress. The reliability data section includes the latest data available
and may contain some generic data. "*" after DATE CODE denotes specific product data.
Device Information:
Process:
Passivation:
Die Size:
Number of Transistors:
Interconnect:
Gate Oxide Thickness:
E6WA-2P2M,HPVt,E2,EPROGVt,TCN1,PF ALOCOS:GOI
NRL Laser w/Nov TEOS Oxide-Nitride
78 x 54
9820
Aluminum / 1% Silicon / 0.5% Copper
150 Å
ELECTRICAL CHARACTERIZATION
DESCRIPTION
DATE CODE CONDITION
READPOINT
QTY FAILS
ESD SENSITIVITY
0539 *
EOS/ESD S5.1 HBM 500 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0539 *
EOS/ESD S5.1 HBM 1000 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0539 *
EOS/ESD S5.1 HBM 2000 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0539 *
EOS/ESD S5.1 HBM 3000 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0539 *
EOS/ESD S5.1 HBM 4000 VOLTS
1
PUL'S
3
0
LATCH-UP
0539 *
JESD78, I-TEST 125C
2
DYS
6
0
LATCH-UP
0539 *
JESD78, Vsupply TEST 125C
2
DYS
6
0
FA#
0
Total:
OPERATING LIFE
DESCRIPTION
DATE CODE CONDITION
READPOINT
HIGH TEMP OP LIFE
0443
125C, 5.5 VOLTS
1000 HRS
77
0
HIGH TEMP OP LIFE
0450
125C, 5.5 VOLTS
1000 HRS
77
0
HIGH TEMP OP LIFE
0507
125C, 5.5 V (PSA) & 17.0 V (PSB)
1000 HRS
45
0
HIGH TEMP OP LIFE
0539 *
125C, 5.5 VOLTS
192
77
0
HRS
Total:
QTY FAILS
0
FA#
W/E ENDURANCE AND DATA RET'N
DESCRIPTION
WRITE CYCLE
STRESS (KCYS)
DATE CODE CONDITION
READPOINT
0443
70 C, 5.5 VOLTS
30
150C
STORAGE LIFE
WRITE CYCLE
STRESS (KCYS)
0450
STORAGE LIFE
WRITE CYCLE
STRESS (KCYS)
STORAGE LIFE
0539 *
*
KCYS
77
0
1000 HRS
77
0
70 C, 5.5 VOLTS
30
77
0
150C
1000 HRS
77
0
55 C, 5.5 VOLTS
30
KCYS
77
0
150C
96
HRS
77
0
KCYS
Total:
FAILURE RATE:
QTY FAILS
MTTF (YRS): 25120
FITS: 4.5
0
FA#