SPANSION AM29LV652DU12RMAF

Am29LV652D
Data Sheet
July 2003
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order
these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number 24961 Revision A
Amendment +4 Issue Date October 29, 2004
THIS PAGE LEFT INTENTIONALLY BLANK.
PRELIMINARY
Am29LV652D
128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only
Uniform Sector Flash Memory with VersatileIO™ Control
DISTINCTIVE CHARACTERISTICS
■ Two 64 Megabit (Am29LV065D) in a single 63-ball 11
x 12 mm FBGA package (Note: Features will be
described for each internal Am29LV065D)
■ Two Chip Enable inputs
— Each CE# controls selection of one internal
Am29LV065D device
■ Single power supply operation
— 3.0 to 3.6 volt read, erase, and program operations
■ VersatileIO™ control
— Device generates output voltages and tolerates input
voltages on DQ I/Os as determined by the voltage on
VIO input
■ High performance
— Access times as fast as 90 ns
■ Manufactured on 0.23 µm process technology
■ CFI (Common Flash Interface) compliant
— Provides device-specific information to the system,
allowing host software to easily reconfigure for
different Flash devices
■ Ultra low power consumption (typical values at 3.0 V,
5 MHz) for the part
— 9 mA typical active read current
— 26 mA typical erase/program current
— 400 nA typical standby mode current
■ Flexible sector architecture
— Two hundred fifty-six 64 Kbyte sectors
■ Sector Protection
— A hardware method to lock a sector to prevent
program or erase operations within that sector
— Sectors can be locked in-system or via programming
equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically writes
and verifies data at specified addresses
■ Compatibility with JEDEC standards
— Except for the added CE2#, the FBGA is pinout and
software compatible with single-power supply Flash
— Superior inadvertent write protection
■ Minimum 1 million erase cycle guarantee per sector
■ 63-ball FBGA Package
■ Erase Suspend/Erase Resume
— Suspends an erase operation to read data from, or
program data to, a sector that is not being erased,
then resumes the erase operation
■ Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
■ Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
■ Ready/Busy# output (RY/BY#)
— Provides a hardware method of detecting program or
erase cycle completion
■ Hardware reset input (RESET#)
— Hardware method to reset the device for reading array
data
■ ACC input
— Accelerates programming time for higher throughput
during system production
■ Program and Erase Performance (VHH not applied to
the ACC input)
— Byte program time: 5 µs typical
— Sector erase time: 1.6 s typical for each 64 Kbyte
sector
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 24961
Rev: A Amendment/+4
Issue Date: October 29, 2004
Refer to AMD’s Website (www.amd.com) for the latest information.
P R E L I M I N A R Y
GENERAL DESCRIPTION
The Am29LV652D is a 128 Mbit, 3.0 Volt (3.0 V to 3.6
V) single power supply flash memory device organized
as two Am29LV065D dice in a single 63-ball FBGA
package. Each Am29LV065D is a 64 Mbit, 3.0 Volt
(3.0 V to 3.6 V) single power supply flash memory device organized as 8,388,608 bytes. Data appears on
DQ0-DQ7. The device is designed to be programmed
in-system with the standard system 3.0 volt VCC supply. A 12.0 volt V PP is not required for program or
erase operations. The Am29LV652D is equipped with
two CE#s for flexible selection between the two internal 64 Mb devices. The device can also be programmed in standard EPROM programmers.
The Am29LV652D offers access times of 90 and 120
ns and is offered in a 63-ball FBGA package. To eliminate bus contention the Am29LV652D device contains
two separate chip enables (CE# and CE2#). Each chip
enable (CE# or CE2#) is connected to only one of the
two dice in the Am29LV652D package. To the system, this device is the same as two independent
Am29LV065D on the same board. The only difference is that they are now packaged together to reduce board space.
Each device requires only a single 3.0 Volt power
supply (3.0 V to 3.6 V) for both read and write functions. Internally generated and regulated voltages are
provided for the program and erase operations.
The device is entirely command set compatible with
the JEDEC single-power-supply Flash standard.
Commands are written to the command register using
standard microprocessor write timing. Register contents serve as inputs to an internal state-machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data
needed for the programming and erase operations.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
The VersatileI/O™ (VIO) control allows the host system to set the voltage levels that the device generates
2
at its data outputs and the voltages tolerated at its data
inputs to the same voltage level that is asserted on
VIO. This allows the device to operate in a 3 V or 5 V
system environment as required. For voltage levels
below 3 V, contact an AMD representative for more information.
The host system can detect whether a program or
erase operation is complete by observing RY/BY#, by
reading the DQ7 (Data# Polling), or DQ6 (toggle) status bits. After a program or erase cycle is completed,
the device is ready to read array data or accept another command.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
V CC detector that automatically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of sectors of memory.
This can be achieved in-system or via programming
equipment.
The Erase Suspend/Erase Resume feature enables
the user to put erase on hold for any period of time to
read data from, or program data to, any sector that is
not selected for erasure. True background erase can
thus be achieved.
The hardware RESET# terminates any operation in
progress and resets the internal state machine to
reading array data. RESET# may be tied to the system
reset circuitry. A system reset would thus also reset
the device, enabling the system microprocessor to
read boot-up firmware from the Flash memory device.
The device offers a standby mode as a power-saving
feature. Once the system places the device into the
standby mode power consumption is greatly reduced.
The accelerated program (ACC) feature allows the
system to program the device at a much faster rate.
When ACC is pulled high to VHH, the device enters the
Unlock Bypass mode, enabling the user to reduce the
time needed to do the program operation. This feature
is intended to increase factory throughput during system production, but may also be used in the field if desired.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunnelling.
The data is programmed using hot electron injection.
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
TABLE OF CONTENTS
Distinctive Characteristics . . . . . . . . . . . . . . . . . . 1
General Description . . . . . . . . . . . . . . . . . . . . . . . . 2
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . . 6
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 9
Table 1. Am29LV652D Device Bus Operations ................................9
VersatileIO™ (VIO) Control ....................................................... 9
Requirements for Reading Array Data ..................................... 9
Writing Commands/Command Sequences ............................ 10
Accelerated Program Operation .......................................... 10
Autoselect Functions ........................................................... 10
Standby Mode ........................................................................ 10
Automatic Sleep Mode ........................................................... 10
RESET#: Hardware Reset Pin ............................................... 10
Output Disable Mode .............................................................. 11
Table 2. Sector Address Table for CE# ..........................................11
Table 3. Sector Address Table for CE2# ........................................15
Autoselect Mode ..................................................................... 19
Table 4. Am29LV652D Autoselect Codes, (High Voltage Method) 19
Sector Group Protection and Unprotection ............................. 20
Table 5. Sector Group Protection/Unprotection Address Table .....20
Temporary Sector Group Unprotect ....................................... 21
Figure 1. Temporary Sector Group Unprotect Operation................ 21
Figure 2. In-System Sector Group Protect/Unprotect Algorithms ... 22
Hardware Data Protection ...................................................... 23
Low VCC Write Inhibit ......................................................... 23
Write Pulse “Glitch” Protection ............................................ 23
Logical Inhibit ...................................................................... 23
Power-Up Write Inhibit ......................................................... 23
Common Flash Memory Interface (CFI) . . . . . . . 23
Table 6. CFI Query Identification String ..........................................
System Interface String...................................................................
Table 8. Device Geometry Definition ..............................................
Table 9. Primary Vendor-Specific Extended Query ........................
23
24
24
25
Command Definitions . . . . . . . . . . . . . . . . . . . . . 25
Reading Array Data ................................................................ 25
Reset Command ..................................................................... 26
Autoselect Command Sequence ............................................ 26
Byte Program Command Sequence ....................................... 26
Unlock Bypass Command Sequence .................................. 26
Figure 3. Program Operation .......................................................... 27
Chip Erase Command Sequence ........................................... 27
Sector Erase Command Sequence ........................................ 28
Erase Suspend/Erase Resume Commands ........................... 28
Figure 4. Erase Operation............................................................... 29
October 29, 2004
Table 10. Am29LV652D Command Definitions ............................. 30
Write Operation Status . . . . . . . . . . . . . . . . . . . . 31
DQ7: Data# Polling ................................................................. 31
Figure 5. Data# Polling Algorithm .................................................. 31
RY/BY#: Ready/Busy# ............................................................ 32
DQ6: Toggle Bit I .................................................................... 32
Figure 6. Toggle Bit Algorithm........................................................ 32
DQ2: Toggle Bit II ................................................................... 33
Reading Toggle Bits DQ6/DQ2 ............................................... 33
DQ5: Exceeded Timing Limits ................................................ 33
DQ3: Sector Erase Timer ....................................................... 33
Table 11. Write Operation Status ................................................... 34
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 35
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 7. Maximum Negative Overshoot Waveform ..................... 35
Figure 8. Maximum Positive Overshoot Waveform....................... 35
DC Characteristics (for two Am29LV065 devices)
36
Figure 9. ICC1 Current vs. Time (Showing Active and
Automatic Sleep Currents) ............................................................. 37
Figure 10. Typical ICC1 vs. Frequency ............................................ 37
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 11. Test Setup.................................................................... 38
Table 12. Test Specifications ......................................................... 38
Figure 12. Input Waveforms and Measurement Levels ................. 38
Key to Switching Waveforms. . . . . . . . . . . . . . . . 38
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 39
Read-Only Operations ........................................................... 39
Figure 13. Read Operation Timings ............................................... 39
Hardware Reset (RESET#) .................................................... 40
Figure 14. Reset Timings ............................................................... 40
Erase and Program Operations .............................................. 41
Figure 15. Program Operation Timings..........................................
Figure 16. Accelerated Program Timing Diagram..........................
Figure 17. Chip/Sector Erase Operation Timings ..........................
Figure 18. Data# Polling Timings (During Embedded Algorithms).
Figure 19. Toggle Bit Timings (During Embedded Algorithms)......
Figure 20. DQ2 vs. DQ6.................................................................
42
42
43
44
45
45
Temporary Sector Unprotect .................................................. 46
Figure 21. Temporary Sector Group Unprotect Timing Diagram ... 46
Figure 22. Sector Group Protect and Unprotect Timing Diagram .. 47
Figure 23. Alternate CE# Controlled Write
(Erase/Program) Operation Timings .............................................. 49
Erase And Programming Performance . . . . . . . 50
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 50
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 51
FSA063—63-Ball Fine-Pitch Ball Grid Array (FBGA) 11 x 12 mm
package .................................................................................. 51
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 52
Am29LV652D
3
P R E L I M I N A R Y
PRODUCT SELECTOR GUIDE
Part Number
Speed Option
Am29LV652D
Regulated Voltage Range: VCC = 3.0–3.6 V
90R
12R
Max Access Time (ns)
90
120
CE# Access Time (ns)
90
120
OE# Access Time (ns)
35
50
Note: See “AC Characteristics” on page 39 for full specifications.
4
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
BLOCK DIAGRAM
VCC
VSS
Sector Switches
RY/BY#
VIO
Erase Voltage
Generator
RESET#
WE#
Input/Output
Buffers
DQ0–DQ7
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
VCC Detector
Address Latch
STB
Timer
A0–A22
STB
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
DQ0–DQ7
ACC
Sector Switches
RY/BY#
VIO
A0–A22
Erase Voltage
Generator
Input/Output
Buffers
State
Control
Command
Register
PGM Voltage
Generator
CE#2
STB
VCC Detector
A0–A22
October 29, 2004
Timer
Address Latch
Chip Enable
Output Enable
Logic
Am29LV652D
STB
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
5
P R E L I M I N A R Y
CONNECTION DIAGRAM
63-Ball FBGA
Top View, Balls Facing
Down
A8
B8
L8
M8
NC*
NC*
NC*
NC*
A7
B7
C7
D7
E7
F7
G7
H7
J7
K7
L7
M7
NC*
NC*
A14
A13
A15
A16
A17
NC
A20
VSS
NC*
NC*
C6
D6
E6
F6
G6
H6
J6
K6
A9
A8
A11
A12
A19
A10
DQ6
DQ7
C5
D5
E5
F5
G5
H5
J5
K5
WE#
RESET#
A22
NC
DQ5
NC
VCC
DQ4
C4
D4
E4
F4
G4
H4
J4
K4
RY/BY#
ACC
NC
NC
DQ2
DQ3
VIO
A21
C3
D3
E3
F3
G3
H3
J3
K3
A7
A18
A6
A5
DQ0
NC
CE2#
DQ1
A2
C2
D2
E2
F2
G2
H2
J2
K2
L2
M2
NC*
A3
A4
A2
A1
A0
CE#
OE#
VSS
NC*
NC*
L1
M1
NC*
NC*
A1
NC*
B1
NC*
* Balls are shorted together via the substrate but not connected to the die.
Special Handling Instructions for FBGA
Package
Special handling is required for Flash Memory products
in FBGA packages.
6
Flash memory devices in FBGA packages may be
damaged if exposed to ultrasonic cleaning methods.
The package and/or data integrity may be compromised
if the package body is exposed to temperatures above
150°C for prolonged periods of time.
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
PIN DESCRIPTION
A0–A22
= 23 Addresses inputs
DQ0–DQ7
= 8 Data inputs/outputs
CE#
= Chip Enable input
CE2#
= Chip Enable input for second die
OE#
= Output Enable input
WE#
= Write Enable input
ACC
= Acceleration Input
RESET#
= Hardware Reset Pin input
RY/BY#
= Ready/Busy output
VCC
= 3.0 volt-only single power supply
(see Product Selector Guide for
speed options and voltage
supply tolerances)
VIO
= Output Buffer power
VSS
= Device Ground
NC
= Pin Not Connected Internally
October 29, 2004
LOGIC SYMBOL
23
A0–A22
CE#
8
DQ0–DQ7
CE2#
OE#
WE#
ACC
RESET#
RY/BY#
VIO
Am29LV652D
7
P R E L I M I N A R Y
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of the following:
Am29LV652D
U
90R
MA
I
TEMPERATURE RANGE
I
= Industrial (–40°C to +85°C)
E
= Extended (–55°C to +125°C)
F
= Industrial (-40oC to +85oC) with Pb-free Package
K
= Extended (-55oC to +125oC) with Pb-free Package
PACKAGE TYPE
MA
= 63-Ball Fine-Pitch Ball Grid Array (FBGA)
0.80 mm pitch, 11 x 12 mm package (FSA063)
SPEED OPTION
See Product Selector Guide and Valid Combinations
SECTOR ARCHITECTURE
U
= Uniform sector device
DEVICE NUMBER/DESCRIPTION
Am29LV652D
128 Megabit (2 x 8 M x 8-Bit) CMOS Uniform Sector Flash Memory with VersatileIO™ Control
3.0 Volt-only Read, Program, and Erase
Valid Combinations for FBGA Packages
Package
Order Number
Marking
Am29LV652DU90R
Am29LV652DU12R
8
MAF,
MAI
L652DU90R
Valid Combinations
Speed/
VIO Range
F, 90 ns, VIO =
I 3.0 V – 5.0 V
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
I,
MAI,
E,
MAE
120 ns, VIO =
L652DU12R
MAF,
F, 3.0 V – 5.0 V
MAK
K
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information
needed to execute the command. The contents of the
Table 1.
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Am29LV652D Device Bus Operations
CE#
(Note 1)
OE#
WE#
RESET#
ACC
Addresses
(Note 2)
DQ0–DQ7
Read
L
L
H
H
X
AIN
DOUT
Write (Program/Erase)
L
H
L
H
X
AIN
(Note 3)
Accelerated Program
L
H
L
H
VHH
AIN
(Note 3)
VCC ± 0.3 V
X
X
VCC ± 0.3 V
H
X
High-Z
Output Disable
L
H
H
H
X
X
High-Z
Reset
X
X
X
L
X
X
High-Z
Sector Group Protect (Note 4)
L
H
L
VID
X
SA, A6 = L,
A1 = H, A0 = L
(Note 3)
Sector Group Unprotect
(Note 4)
L
H
L
VID
X
SA, A6 = H,
A1 = H, A0 = L
(Note 3)
Temporary Sector Group
Unprotect
X
X
X
VID
X
AIN
(Note 3)
Operation
Standby
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 8.5–12.5 V, VHH = 11.5–12.5 V, X = Don’t Care, SA = Sector Address,
AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. CE# can be replaced with CE2# when referring to the second die in the package. CE# and CE2# must not both be driven at
the same time.
2. Addresses are A22:A0. Sector addresses are A22:A16.
3. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm (see Figure 2).
4. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Group
Protection and Unprotection” section.
5. All sectors are unprotected when shipped from the factory.
VersatileIO™ (VIO) Control
Requirements for Reading Array Data
The VersatileIO (VIO) control allows the host system to
set the voltage levels that the device generates at its
data outputs and the voltages tolerated at its data inputs to the same voltage level that is asserted on VIO.
This allows the device to operate in a 3 V or 5 V system environment as required. For voltage levels below
3 V, contact an AMD representative for more information.
To read array data from the outputs, the system must
drive CE# or CE2# and OE# to VIL. CE# or CE2# is the
power control and selects the device. OE# is the output control and gates array data to the outputs. WE#
should remain at VIH.
For example, a V I/O of 4.5–5.0 volts allows for I/O at
the 5 volt level, driving and receiving signals to and
from other 5 V devices on the same data bus.
October 29, 2004
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No command is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. The device remains
Am29LV652D
9
P R E L I M I N A R Y
enabled for read access until the command register
contents are altered.
See “VersatileIO™ (VIO) Control” for more information.
Refer to the AC “Read-Only Operations” on page 39
table for timing specifications and to Figure 13, on
page 39 for the timing diagram. ICC1 in the DC Characteristics table represents the active current specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# (or CE2#) to VIL, and OE# to VIH.
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required to program a byte, instead of four. The “Byte
Program Command Sequence” on page 26 section
contains details on programming data to the device
using both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Table 2, on page 11 indicates
the address space that each sector occupies.
ICC2 in the DC Characteristics table represents the active current specification for the write mode. The AC
Characteristics section contains timing specification
tables and timing diagrams for write operations.
Accelerated Program Operation
The device offers accelerated program operations
through the ACC function. This function is primarily intended to allow faster manufacturing throughput during system production.
If the system asserts VHH on ACC, the device automatically enters the aforementioned Unlock Bypass mode,
temporarily unprotects any protected sectors, and
uses the higher voltage to reduce the time required for
program operations. The system would use a two-cycle program command sequence as required by the
Unlock Bypass mode. Removing V HH from ACC returns the device to normal operation. Note that ACC
must not be at VHH for operations other than accelerated programming, or device damage may result.
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in
this mode. Refer to the “Autoselect Mode” on page 19
and “Autoselect Command Sequence” on page 26
sections for more information.
10
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE#, CE2#, and RESET# are all held at VCC ± 0.3 V.
(Note that this is a more restricted voltage range than
VIH.) If CE#, CE2#, and RESET# are held at VIH, but
not within V CC ± 0.3 V, the device is in the standby
mode, but the standby current is greater. The device
requires standard access time (tCE) for read access
when the device is in either of these standby modes,
before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
ICC3 in the DC Characteristics (for two Am29LV065 devices) table represents the standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for tACC +
30 ns. The automatic sleep mode is independent of
the CE#, CE2#, WE#, and OE# control signals. Standard address access timings provide new data when
addresses are changed. While in sleep mode, output
data is latched and always available to the system.
ICC4 in the DC Characteristics (for two Am29LV065 devices) table represents the automatic sleep mode current specification.
RESET#: Hardware Reset Pin
RESET# provides a hardware method of resetting the
device to reading array data. When RESET# is driven
low for at least a period of tRP, the device immediately
terminates any operation in progress, tristates all outputs, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets
the internal state machine to reading array data. The
operation that was interrupted should be reinitiated
once the device is ready to accept another command
sequence, to ensure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS ± 0.3 V, the device
draws CMOS standby current (ICC4). If RESET# is held
at VIL, but not within VSS ± 0.3 V, the standby current is
greater.
RESET# may be tied to the system reset circuitry. A
system reset would thus also reset the Flash memory,
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
enabling the system to read the boot-up firmware from
the Flash memory.
of tREADY (not during Embedded Algorithms). The system can read data tRH after RESET# returns to VIH.
If RESET# is asserted during a program or erase operation, RY/BY# remains a “0” (busy) until the internal
reset operation is complete, which requires a time of
tREADY (during Embedded Algorithms). The system can
thus monitor RY/BY# to determine whether the reset
operation is complete. If RESET# is asserted when a
program or erase operation is not executing (RY/BY#
is “1”), the reset operation is completed within a time
Refer to the “AC Characteristics” on page 39 tables for
RESET# parameters and to Figure 14, on page 40 for
the timing diagram.
Table 2.
Output Disable Mode
When the OE# input is at VIH, output from the device is
d i s a b l ed . Th e o u t pu ts a r e p l a c e d i n t h e h i g h
impedance state.
Sector Address Table for CE# (Sheet 1 of 4)
Sector
A22
A21
A20
A19
A18
A17
A16
8-bit Address Range
(in hexadecimal)
SA0
0
0
0
0
0
0
0
000000–00FFFF
SA1
0
0
0
0
0
0
1
010000–01FFFF
SA2
0
0
0
0
0
1
0
020000–02FFFF
SA3
0
0
0
0
0
1
1
030000–03FFFF
SA4
0
0
0
0
1
0
0
040000–04FFFF
SA5
0
0
0
0
1
0
1
050000–05FFFF
SA6
0
0
0
0
1
1
0
060000–06FFFF
SA7
0
0
0
0
1
1
1
070000–07FFFF
SA8
0
0
0
1
0
0
0
080000–08FFFF
SA9
0
0
0
1
0
0
1
090000–09FFFF
SA10
0
0
0
1
0
1
0
0A0000–0AFFFF
SA11
0
0
0
1
0
1
1
0B0000–0BFFFF
SA12
0
0
0
1
1
0
0
0C0000–0CFFFF
SA13
0
0
0
1
1
0
1
0D0000–0DFFFF
SA14
0
0
0
1
1
1
0
0E0000–0EFFFF
SA15
0
0
0
1
1
1
1
0F0000–0FFFFF
SA16
0
0
1
0
0
0
0
100000–10FFFF
SA17
0
0
1
0
0
0
1
110000–11FFFF
SA18
0
0
1
0
0
1
0
120000–12FFFF
SA19
0
0
1
0
0
1
1
130000–13FFFF
SA20
0
0
1
0
1
0
0
140000–14FFFF
SA21
0
0
1
0
1
0
1
150000–15FFFF
SA22
0
0
1
0
1
1
0
160000–16FFFF
SA23
0
0
1
0
1
1
1
170000–17FFFF
SA24
0
0
1
1
0
0
0
180000–18FFFF
SA25
0
0
1
1
0
0
1
190000–19FFFF
SA26
0
0
1
1
0
1
0
1A0000–1AFFFF
October 29, 2004
Am29LV652D
11
P R E L I M I N A R Y
Table 2.
12
Sector Address Table for CE# (Sheet 2 of 4)
Sector
A22
A21
A20
A19
A18
A17
A16
8-bit Address Range
(in hexadecimal)
SA27
0
0
1
1
0
1
1
1B0000–1BFFFF
SA28
0
0
1
1
1
0
0
1C0000–1CFFFF
SA29
0
0
1
1
1
0
1
1D0000–1DFFFF
SA30
0
0
1
1
1
1
0
1E0000–1EFFFF
SA31
0
0
1
1
1
1
1
1F0000–1FFFFF
SA32
0
1
0
0
0
0
0
200000–20FFFF
SA33
0
1
0
0
0
0
1
210000–21FFFF
SA34
0
1
0
0
0
1
0
220000–22FFFF
SA35
0
1
0
0
0
1
1
230000–23FFFF
SA36
0
1
0
0
1
0
0
240000–24FFFF
SA37
0
1
0
0
1
0
1
250000–25FFFF
SA38
0
1
0
0
1
1
0
260000–26FFFF
SA39
0
1
0
0
1
1
1
270000–27FFFF
SA40
0
1
0
1
0
0
0
280000–28FFFF
SA41
0
1
0
1
0
0
1
290000–29FFFF
SA42
0
1
0
1
0
1
0
2A0000–2AFFFF
SA43
0
1
0
1
0
1
1
2B0000–2BFFFF
SA44
0
1
0
1
1
0
0
2C0000–2CFFFF
SA45
0
1
0
1
1
0
1
2D0000–2DFFFF
SA46
0
1
0
1
1
1
0
2E0000–2EFFFF
SA47
0
1
0
1
1
1
1
2F0000–2FFFFF
SA48
0
1
1
0
0
0
0
300000–30FFFF
SA49
0
1
1
0
0
0
1
310000–31FFFF
SA50
0
1
1
0
0
1
0
320000–32FFFF
SA51
0
1
1
0
0
1
1
330000–33FFFF
SA52
0
1
1
0
1
0
0
340000–34FFFF
SA53
0
1
1
0
1
0
1
350000–35FFFF
SA54
0
1
1
0
1
1
0
360000–36FFFF
SA55
0
1
1
0
1
1
1
370000–37FFFF
SA56
0
1
1
1
0
0
0
380000–38FFFF
SA57
0
1
1
1
0
0
1
390000–39FFFF
SA58
0
1
1
1
0
1
0
3A0000–3AFFFF
SA59
0
1
1
1
0
1
1
3B0000–3BFFFF
SA60
0
1
1
1
1
0
0
3C0000–3CFFFF
SA61
0
1
1
1
1
0
1
3D0000–3DFFFF
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
Table 2.
Sector Address Table for CE# (Sheet 3 of 4)
Sector
A22
A21
A20
A19
A18
A17
A16
8-bit Address Range
(in hexadecimal)
SA62
0
1
1
1
1
1
0
3E0000–3EFFFF
SA63
0
1
1
1
1
1
1
3F0000–3FFFFF
SA64
1
0
0
0
0
0
0
400000–40FFFF
SA65
1
0
0
0
0
0
1
410000–41FFFF
SA66
1
0
0
0
0
1
0
420000–42FFFF
SA67
1
0
0
0
0
1
1
430000–43FFFF
SA68
1
0
0
0
1
0
0
440000–44FFFF
SA69
1
0
0
0
1
0
1
450000–45FFFF
SA70
1
0
0
0
1
1
0
460000–46FFFF
SA71
1
0
0
0
1
1
1
470000–47FFFF
SA72
1
0
0
1
0
0
0
480000–48FFFF
SA73
1
0
0
1
0
0
1
490000–49FFFF
SA74
1
0
0
1
0
1
0
4A0000–4AFFFF
SA75
1
0
0
1
0
1
1
4B0000–4BFFFF
SA76
1
0
0
1
1
0
0
4C0000–4CFFFF
SA77
1
0
0
1
1
0
1
4D0000–4DFFFF
SA78
1
0
0
1
1
1
0
4E0000–4EFFFF
SA79
1
0
0
1
1
1
1
4F0000–4FFFFF
SA80
1
0
1
0
0
0
0
500000–50FFFF
SA81
1
0
1
0
0
0
1
510000–51FFFF
SA82
1
0
1
0
0
1
0
520000–52FFFF
SA83
1
0
1
0
0
1
1
530000–53FFFF
SA84
1
0
1
0
1
0
0
540000–54FFFF
SA85
1
0
1
0
1
0
1
550000–55FFFF
SA86
1
0
1
0
1
1
0
560000–56FFFF
SA87
1
0
1
0
1
1
1
570000–57FFFF
SA88
1
0
1
1
0
0
0
580000–58FFFF
SA89
1
0
1
1
0
0
1
590000–59FFFF
SA90
1
0
1
1
0
1
0
5A0000–5AFFFF
SA91
1
0
1
1
0
1
1
5B0000–5BFFFF
SA92
1
0
1
1
1
0
0
5C0000–5CFFFF
SA93
1
0
1
1
1
0
1
5D0000–5DFFFF
SA94
1
0
1
1
1
1
0
5E0000–5EFFFF
SA95
1
0
1
1
1
1
1
5F0000–5FFFFF
SA96
1
1
0
0
0
0
0
600000–60FFFF
October 29, 2004
Am29LV652D
13
P R E L I M I N A R Y
Table 2.
Sector Address Table for CE# (Sheet 4 of 4)
Sector
A22
A21
A20
A19
A18
A17
A16
8-bit Address Range
(in hexadecimal)
SA97
1
1
0
0
0
0
1
610000–61FFFF
SA98
1
1
0
0
0
1
0
620000–62FFFF
SA99
1
1
0
0
0
1
1
630000–63FFFF
SA100
1
1
0
0
1
0
0
640000–64FFFF
SA101
1
1
0
0
1
0
1
650000–65FFFF
SA102
1
1
0
0
1
1
0
660000–66FFFF
SA103
1
1
0
0
1
1
1
670000–67FFFF
SA104
1
1
0
1
0
0
0
680000–68FFFF
SA105
1
1
0
1
0
0
1
690000–69FFFF
SA106
1
1
0
1
0
1
0
6A0000–6AFFFF
SA107
1
1
0
1
0
1
1
6B0000–6BFFFF
SA108
1
1
0
1
1
0
0
6C0000–6CFFFF
SA109
1
1
0
1
1
0
1
6D0000–6DFFFF
SA110
1
1
0
1
1
1
0
6E0000–6EFFFF
SA111
1
1
0
1
1
1
1
6F0000–6FFFFF
SA112
1
1
1
0
0
0
0
700000–70FFFF
SA113
1
1
1
0
0
0
1
710000–71FFFF
SA114
1
1
1
0
0
1
0
720000–72FFFF
SA115
1
1
1
0
0
1
1
730000–73FFFF
SA116
1
1
1
0
1
0
0
740000–74FFFF
SA117
1
1
1
0
1
0
1
750000–75FFFF
SA118
1
1
1
0
1
1
0
760000–76FFFF
SA119
1
1
1
0
1
1
1
770000–77FFFF
SA120
1
1
1
1
0
0
0
780000–78FFFF
SA121
1
1
1
1
0
0
1
790000–79FFFF
SA122
1
1
1
1
0
1
0
7A0000–7AFFFF
SA123
1
1
1
1
0
1
1
7B0000–7BFFFF
SA124
1
1
1
1
1
0
0
7C0000–7CFFFF
SA125
1
1
1
1
1
0
1
7D0000–7DFFFF
SA126
1
1
1
1
1
1
0
7E0000–7EFFFF
SA127
1
1
1
1
1
1
1
7F0000–7FFFFF
Note: All sectors are 64 Kbytes in size.
14
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
Table 3.
Sector Address Table for CE2# (Sheet 1 of 4)
Sector
A22
A21
A20
A19
A18
A17
A16
8-bit Address Range
(in hexadecimal)
SA0
0
0
0
0
0
0
0
000000–00FFFF
SA1
0
0
0
0
0
0
1
010000–01FFFF
SA2
0
0
0
0
0
1
0
020000–02FFFF
SA3
0
0
0
0
0
1
1
030000–03FFFF
SA4
0
0
0
0
1
0
0
040000–04FFFF
SA5
0
0
0
0
1
0
1
050000–05FFFF
SA6
0
0
0
0
1
1
0
060000–06FFFF
SA7
0
0
0
0
1
1
1
070000–07FFFF
SA8
0
0
0
1
0
0
0
080000–08FFFF
SA9
0
0
0
1
0
0
1
090000–09FFFF
SA10
0
0
0
1
0
1
0
0A0000–0AFFFF
SA11
0
0
0
1
0
1
1
0B0000–0BFFFF
SA12
0
0
0
1
1
0
0
0C0000–0CFFFF
SA13
0
0
0
1
1
0
1
0D0000–0DFFFF
SA14
0
0
0
1
1
1
0
0E0000–0EFFFF
SA15
0
0
0
1
1
1
1
0F0000–0FFFFF
SA16
0
0
1
0
0
0
0
100000–10FFFF
SA17
0
0
1
0
0
0
1
110000–11FFFF
SA18
0
0
1
0
0
1
0
120000–12FFFF
SA19
0
0
1
0
0
1
1
130000–13FFFF
SA20
0
0
1
0
1
0
0
140000–14FFFF
SA21
0
0
1
0
1
0
1
150000–15FFFF
SA22
0
0
1
0
1
1
0
160000–16FFFF
SA23
0
0
1
0
1
1
1
170000–17FFFF
SA24
0
0
1
1
0
0
0
180000–18FFFF
SA25
0
0
1
1
0
0
1
190000–19FFFF
SA26
0
0
1
1
0
1
0
1A0000–1AFFFF
SA27
0
0
1
1
0
1
1
1B0000–1BFFFF
SA28
0
0
1
1
1
0
0
1C0000–1CFFFF
SA29
0
0
1
1
1
0
1
1D0000–1DFFFF
SA30
0
0
1
1
1
1
0
1E0000–1EFFFF
SA31
0
0
1
1
1
1
1
1F0000–1FFFFF
SA32
0
1
0
0
0
0
0
200000–20FFFF
SA33
0
1
0
0
0
0
1
210000–21FFFF
October 29, 2004
Am29LV652D
15
P R E L I M I N A R Y
Table 3.
16
Sector Address Table for CE2# (Sheet 2 of 4)
Sector
A22
A21
A20
A19
A18
A17
A16
8-bit Address Range
(in hexadecimal)
SA34
0
1
0
0
0
1
0
220000–22FFFF
SA35
0
1
0
0
0
1
1
230000–23FFFF
SA36
0
1
0
0
1
0
0
240000–24FFFF
SA37
0
1
0
0
1
0
1
250000–25FFFF
SA38
0
1
0
0
1
1
0
260000–26FFFF
SA39
0
1
0
0
1
1
1
270000–27FFFF
SA40
0
1
0
1
0
0
0
280000–28FFFF
SA41
0
1
0
1
0
0
1
290000–29FFFF
SA42
0
1
0
1
0
1
0
2A0000–2AFFFF
SA43
0
1
0
1
0
1
1
2B0000–2BFFFF
SA44
0
1
0
1
1
0
0
2C0000–2CFFFF
SA45
0
1
0
1
1
0
1
2D0000–2DFFFF
SA46
0
1
0
1
1
1
0
2E0000–2EFFFF
SA47
0
1
0
1
1
1
1
2F0000–2FFFFF
SA48
0
1
1
0
0
0
0
300000–30FFFF
SA49
0
1
1
0
0
0
1
310000–31FFFF
SA50
0
1
1
0
0
1
0
320000–32FFFF
SA51
0
1
1
0
0
1
1
330000–33FFFF
SA52
0
1
1
0
1
0
0
340000–34FFFF
SA53
0
1
1
0
1
0
1
350000–35FFFF
SA54
0
1
1
0
1
1
0
360000–36FFFF
SA55
0
1
1
0
1
1
1
370000–37FFFF
SA56
0
1
1
1
0
0
0
380000–38FFFF
SA57
0
1
1
1
0
0
1
390000–39FFFF
SA58
0
1
1
1
0
1
0
3A0000–3AFFFF
SA59
0
1
1
1
0
1
1
3B0000–3BFFFF
SA60
0
1
1
1
1
0
0
3C0000–3CFFFF
SA61
0
1
1
1
1
0
1
3D0000–3DFFFF
SA62
0
1
1
1
1
1
0
3E0000–3EFFFF
SA63
0
1
1
1
1
1
1
3F0000–3FFFFF
SA64
1
0
0
0
0
0
0
400000–40FFFF
SA65
1
0
0
0
0
0
1
410000–41FFFF
SA66
1
0
0
0
0
1
0
420000–42FFFF
SA67
1
0
0
0
0
1
1
430000–43FFFF
SA68
1
0
0
0
1
0
0
440000–44FFFF
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
Table 3.
Sector Address Table for CE2# (Sheet 3 of 4)
Sector
A22
A21
A20
A19
A18
A17
A16
8-bit Address Range
(in hexadecimal)
SA69
1
0
0
0
1
0
1
450000–45FFFF
SA70
1
0
0
0
1
1
0
460000–46FFFF
SA71
1
0
0
0
1
1
1
470000–47FFFF
SA72
1
0
0
1
0
0
0
480000–48FFFF
SA73
1
0
0
1
0
0
1
490000–49FFFF
SA74
1
0
0
1
0
1
0
4A0000–4AFFFF
SA75
1
0
0
1
0
1
1
4B0000–4BFFFF
SA76
1
0
0
1
1
0
0
4C0000–4CFFFF
SA77
1
0
0
1
1
0
1
4D0000–4DFFFF
SA78
1
0
0
1
1
1
0
4E0000–4EFFFF
SA79
1
0
0
1
1
1
1
4F0000–4FFFFF
SA80
1
0
1
0
0
0
0
500000–50FFFF
SA81
1
0
1
0
0
0
1
510000–51FFFF
SA82
1
0
1
0
0
1
0
520000–52FFFF
SA83
1
0
1
0
0
1
1
530000–53FFFF
SA84
1
0
1
0
1
0
0
540000–54FFFF
SA85
1
0
1
0
1
0
1
550000–55FFFF
SA86
1
0
1
0
1
1
0
560000–56FFFF
SA87
1
0
1
0
1
1
1
570000–57FFFF
SA88
1
0
1
1
0
0
0
580000–58FFFF
SA89
1
0
1
1
0
0
1
590000–59FFFF
SA90
1
0
1
1
0
1
0
5A0000–5AFFFF
SA91
1
0
1
1
0
1
1
5B0000–5BFFFF
SA92
1
0
1
1
1
0
0
5C0000–5CFFFF
SA93
1
0
1
1
1
0
1
5D0000–5DFFFF
SA94
1
0
1
1
1
1
0
5E0000–5EFFFF
SA95
1
0
1
1
1
1
1
5F0000–5FFFFF
SA96
1
1
0
0
0
0
0
600000–60FFFF
SA97
1
1
0
0
0
0
1
610000–61FFFF
SA98
1
1
0
0
0
1
0
620000–62FFFF
SA99
1
1
0
0
0
1
1
630000–63FFFF
SA100
1
1
0
0
1
0
0
640000–64FFFF
SA101
1
1
0
0
1
0
1
650000–65FFFF
SA102
1
1
0
0
1
1
0
660000–66FFFF
SA103
1
1
0
0
1
1
1
670000–67FFFF
October 29, 2004
Am29LV652D
17
P R E L I M I N A R Y
Table 3.
Sector Address Table for CE2# (Sheet 4 of 4)
Sector
A22
A21
A20
A19
A18
A17
A16
8-bit Address Range
(in hexadecimal)
SA104
1
1
0
1
0
0
0
680000–68FFFF
SA105
1
1
0
1
0
0
1
690000–69FFFF
SA106
1
1
0
1
0
1
0
6A0000–6AFFFF
SA107
1
1
0
1
0
1
1
6B0000–6BFFFF
SA108
1
1
0
1
1
0
0
6C0000–6CFFFF
SA109
1
1
0
1
1
0
1
6D0000–6DFFFF
SA110
1
1
0
1
1
1
0
6E0000–6EFFFF
SA111
1
1
0
1
1
1
1
6F0000–6FFFFF
SA112
1
1
1
0
0
0
0
700000–70FFFF
SA113
1
1
1
0
0
0
1
710000–71FFFF
SA114
1
1
1
0
0
1
0
720000–72FFFF
SA115
1
1
1
0
0
1
1
730000–73FFFF
SA116
1
1
1
0
1
0
0
740000–74FFFF
SA117
1
1
1
0
1
0
1
750000–75FFFF
SA118
1
1
1
0
1
1
0
760000–76FFFF
SA119
1
1
1
0
1
1
1
770000–77FFFF
SA120
1
1
1
1
0
0
0
780000–78FFFF
SA121
1
1
1
1
0
0
1
790000–79FFFF
SA122
1
1
1
1
0
1
0
7A0000–7AFFFF
SA123
1
1
1
1
0
1
1
7B0000–7BFFFF
SA124
1
1
1
1
1
0
0
7C0000–7CFFFF
SA125
1
1
1
1
1
0
1
7D0000–7DFFFF
SA126
1
1
1
1
1
1
0
7E0000–7EFFFF
SA127
1
1
1
1
1
1
1
7F0000–7FFFFF
Note: All sectors are 64 Kbytes in size.
18
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming
algorithm. However, the autoselect codes can also be
accessed in-system through the command register.
When using programming equipment, the autoselect
mode requires V ID (8.5 V to 12.5 V) on address A9.
Addresses A6, A1, and A0 must be as shown in
Table 4, on page 19. In addition, when verifying sector
protection, the sector address must appear on the appropriate highest order address bits (see Table 2, on
page 11 and Table 3, on page 15). Table 4 shows the
remaining address bits that are don’t care. When all
necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ7–DQ0.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Table 10, on page 30.
This method does not require V ID. Refer to the “Autoselect Command Sequence” on page 26 section for
more information.
Table 4. Am29LV652D Autoselect Codes, (High Voltage Method)
Description
CE# OE# WE#
A22
to
A16
A15
to
A10
A9
A8
to
A7
A6
A5
to
A2
A1
A0
DQ7 to DQ0
Manufacturer ID: AMD
L
L
H
X
X
VID
X
L
X
L
L
01h
Device ID: Am29LV652D
L
L
H
X
X
VID
X
L
X
L
H
93h
Sector Protection
Verification
L
L
H
SA
X
VID
X
L
X
H
L
01h (protected),
00h (unprotected)
Legend: L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
Notes:
1. CE# can be replaced with CE2# when referring to the second die in the package.
2. The device ID’s used for the Am29LV652 are the same as the Am29LV065, because the Am29LV652 uses two Am29LV065
dice and appears to the system as two Am29LV065 devices.
October 29, 2004
Am29LV652D
19
P R E L I M I N A R Y
Sector Group Protection and
Unprotection
Table 5. Sector Group Protection/Unprotection
Address Table
The hardware sector group protection feature disables
both program and erase operations in any sector
group. In this device, a sector group consists of four
adjacent sectors that are protected or unprotected at
the same time (see Table 5). The hardware sector
group unprotection feature re-enables both program
and erase operations in previously protected sector
groups. Sector group protection/unprotection can be
implemented via two methods.
Sector Group
A22–A18
SA0–SA3
00000
The primary method requires V ID on RESET# only,
and can be implemented either in-system or via programming equipment. Figure 2, on page 22 shows the
algorithms and Figure 22, on page 47 shows the timing diagram. This method uses standard microprocessor bus cycle timing. For sector group unprotect, all
unprotected sector groups must first be protected prior
to the first sector group unprotect write cycle.
SA4–SA7
00001
SA8–SA11
00010
SA12–SA15
00011
SA16–SA19
00100
SA20–SA23
00101
SA24–SA27
00110
SA28–SA31
00111
SA32–SA35
01000
SA36–SA39
01001
SA40–SA43
01010
SA44–SA47
01011
SA48–SA51
01100
SA52–SA55
01101
SA56–SA59
01110
SA60–SA63
01111
SA64–SA67
10000
SA68–SA71
10001
SA72–SA75
10010
The device is shipped with all sector groups unprotected. AMD offers the option of programming and
protecting sector groups at its factory prior to shipping
the device through AMD’s ExpressFlash™ Service.
Contact an AMD representative for details.
SA76–SA79
10011
SA80–SA83
10100
SA84–SA87
10101
SA88–SA91
10110
It is possible to determine whether a sector group is
protected or unprotected. See the “Autoselect Mode”
on page 19 section for details.
SA92–SA95
10111
SA96–SA99
11000
SA100–SA103
11001
SA104–SA107
11010
SA108–SA111
11011
SA112–SA115
11100
Some earlier 3.0 volt-only AMD flash devices used a
sector protection/unprotection method intended only
for programming equipment, and required VID on address A9 and OE#. If this earlier method is required for
the intended application, contact AMD for further details.
SA116–SA119
11101
SA120–SA123
11110
SA124–SA127
11111
Note: All sector groups are 256 Kbytes in size.
20
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
Temporary Sector Group Unprotect
(Note: In this device, a sector group consists of four adjacent
sectors that are protected or unprotected at the same time
(see Table 5, on page 20)).
START
This feature allows temporary unprotection of previously protected sector groups to change data in-system. The Sector Group Unprotect mode is activated by
setting RESET# to VID (8.5 V – 12.5 V). During this
mode, formerly protected sector groups can be programmed or erased by selecting the sector group addresses. Once VID is removed from RESET#, all the
previously protected sector groups are
protected again. Figure 1, on page 21 shows the algorithm, and Figure 21, on page 46 shows the timing diagrams, for this feature.
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Group Unprotect
Completed (Note 2)
Notes:
1. All protected sector groups unprotected.
2. All previously protected sector groups are protected
once again.
Figure 1. Temporary Sector Group
Unprotect Operation
October 29, 2004
Am29LV652D
21
P R E L I M I N A R Y
START
START
PLSCNT = 1
RESET# = VID
Wait 1 µs
Temporary Sector
Group Unprotect
Mode
No
PLSCNT = 1
Protect all sector
groups: The indicated
portion of the sector
group protect algorithm
must be performed for all
unprotected sector
groups prior to issuing
the first sector group
unprotect address
RESET# = VID
Wait 1 µs
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Temporary Sector
Group Unprotect
Mode
Yes
Yes
Set up sector
group address
No
Sector Group Protect:
Write 60h to sector
group address with
A6 = 0, A1 = 1,
A0 = 0
All sector
groups
protected?
Yes
Set up first sector
group address
Sector Group
Unprotect:
Write 60h to sector
group address with
A6 = 1, A1 = 1,
A0 = 0
Wait 150 µs
Increment
PLSCNT
No
Verify Sector Group
Protect: Write 40h
to sector group
address twith A6 = 0,
A1 = 1, A0 = 0
Reset
PLSCNT = 1
Wait 15 ms
Read from
sector group address
with A6 = 0,
A1 = 1, A0 = 0
Verify Sector Group
Unprotect: Write
40h to sector group
address with
A6 = 1, A1 = 1,
A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Read from
sector group
address with A6 = 1,
A1 = 1, A0 = 0
Data = 01h?
Yes
No
Yes
Device failed
Protect
another
sector group?
Yes
PLSCNT
= 1000?
No
Yes
Remove VID
from RESET#
Device failed
Write reset
command
Sector Group
Protect
Algorithm
Set up
next sector group
address
No
Data = 00h?
Yes
Last sector
group
verified?
No
Yes
Sector Group
Protect complete
Sector Group
Unprotect
Algorithm
Remove VID
from RESET#
Write reset
command
Sector Group
Unprotect complete
Figure 2.
22
In-System Sector Group Protect/Unprotect Algorithms
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 10, on
page 30 for command definitions). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might
otherwise be caused by spurious system level signals
during VCC power-up and power-down transitions, or
from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to the read mode. Subsequent
writes are ignored until VCC is greater than VLKO. The
system must provide the proper signals to the control
inputs to prevent unintentional writes when V CC is
greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#,
CE2#, or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH, CE2# = VIH or WE# = VIH. To initiate a
write cycle, CE# (or CE2#), and WE# must be a logical
zero while OE# is a logical one.
Power-Up Write Inhibit
If WE# = CE# = CE2# = V IL and OE# = V IH during
power up, the device does not accept commands on
the rising edge of WE#. The internal state machine is
automatically reset to the read mode on power-up.
COMMON FLASH MEMORY INTERFACE (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
The Am29LV652 is a two die solution which appears
as two 64 Mbit Am29LV065 devices in the system.
This allows the same CFI information to be used because the system “sees” two 64 Mbit devices, not a
single 128 Mbit device.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, any time the
device is ready to read array data (addresses are don’t
Table 6.
care). The system can read CFI information at the addresses given in Table 6, on page 23 to Table 9, on
page 25. To terminate reading CFI data, the system
must write the reset command.
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Table 6, on
page 23 to Table 9, on page 25. The system must
write the reset command to return the device to the
autoselect mode.
For further information, please refer to the CFI Specification and CFI Publication 100, available via the
World Wide Web at http://www.amd.com/products/nvd/overview/cfi.html. Alternatively, contact an
AMD representative for copies of these documents.
CFI Query Identification String
Addresses (x8)
Data
10h
11h
12h
51h
52h
59h
Query Unique ASCII string “QRY”
13h
14h
02h
00h
Primary OEM Command Set
15h
16h
40h
00h
Address for Primary Extended Table
17h
18h
00h
00h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
00h
00h
Address for Alternate OEM Extended Table (00h = none exists)
October 29, 2004
Description
Am29LV652D
23
P R E L I M I N A R Y
Table 7. System Interface String
Addresses (x8)
Data
Description
1Bh
27h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
36h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
00h
VPP Min. voltage (00h = no VPP input present)
1Eh
00h
VPP Max. voltage (00h = no VPP input present)
1Fh
04h
Typical timeout per single byte write 2N µs
20h
00h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
0Ah
Typical timeout per individual block erase 2N ms
22h
00h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
05h
Max. timeout for byte write 2N times typical
24h
00h
Max. timeout for buffer write 2N times typical
25h
04h
Max. timeout per individual block erase 2N times typical
26h
00h
Max. timeout for full chip erase 2N times typical (00h = not supported)
Table 8.
Device Geometry Definition
Addresses (x8)
Data
27h
17h
Device Size = 2N byte
28h
29h
00h
00h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
00h
00h
Max. number of bytes in multi-byte write = 2N
(00h = not supported)
2Ch
01h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
7Fh
00h
00h
01h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
00h
00h
00h
00h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
00h
00h
00h
00h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
00h
00h
00h
00h
Erase Block Region 4 Information (refer to CFI publication 100)
24
Description
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
Table 9.
Primary Vendor-Specific Extended Query
Addresses (x8)
Data
Description
40h
41h
42h
50h
52h
49h
Query-unique ASCII string “PRI”
43h
31h
Major version number, ASCII
44h
31h
Minor version number, ASCII
45h
01h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Silicon Revision Number (Bits 7-2)
46h
02h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
04h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
01h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
04h
Sector Protect/Unprotect scheme
04 = 29LV800 mode
4Ah
00h
Simultaneous Operation
00 = Not Supported, X = Number of Sectors in Bank
4Bh
000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
00h
Page Mode Type
00 = Not Supported
4Dh
B5h
4Eh
C5h
4Fh
00h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
02h = Bottom Boot Device, 03h = Top Boot Device
COMMAND DEFINITIONS
Writing specific address and data commands or sequences into the command register initiates device operations. Table 10, on page 30 defines the valid
register command sequences. Writing incorrect address and data values or writing them in the improper sequence resets the device to reading array
data.
All addresses are latched on the falling edge of WE#
or CE# (or CE2#), whichever happens later. All data is
latched on the rising edge of WE# or CE# (or CE2#),
whichever happens first. Refer to “AC Characteristics”
on page 39 for timing diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
October 29, 2004
retrieve data. The device is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the erase-suspend-read mode, after
which the system can read data from any
non-erase-suspended sector. After completing a programming operation in the Erase Suspend mode, the
system may once again read array data with the same
exception. See “Erase Suspend/Erase Resume Commands” on page 28 for more information.
The system must issue the reset command to return
the device to the read (or erase-suspend-read) mode
if DQ5 goes high during an active program or erase
operation, or if the device is in the autoselect mode.
Am29LV652D
25
P R E L I M I N A R Y
See the next section, “Reset Command”, for more information.
may read at any address any number of times without
initiating another autoselect command sequence:
See also “VersatileIO™ (V IO ) Control” on page 9 for
more information. The Read-Only Operations table
provides the read parameters, and Figure 13, on page
39 shows the timing diagram.
■ A read cycle at address XX00h returns the manufacturer code.
Reset Command
■ A read cycle to an address containing a sector
group address (SA), and the address 02h on A7–A0
returns 01h if the sector group is protected, or 00h
if it is unprotected. (Refer to Table 5, on page 20 for
valid sector addresses).
Writing the reset command resets the device to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
■ A read cycle at address XX01h returns the device
code.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to the read
mode. Once erasure begins, however, the device ignores reset commands until the operation is complete.
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the device was previously in Erase Suspend).
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the device to
the read mode. If the program command sequence is
written while the device is in the Erase Suspend mode,
writing the reset command returns the device to the
erase-suspend-read mode. Once programming begins, however, the device ignores reset commands
until the operation is complete.
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verifies the
programmed cell margin. Table 10, on page 30 shows
the address and data requirements for the byte program command sequence.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If the device entered the autoselect mode while in the Erase
Suspend mode, writing the reset command returns the
device to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to the
read mode (or erase-suspend-read mode if the device
was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and device codes,
and determine whether or not a sector is protected.
Table 10, on page 30 shows the address and data requirements. This method is an alternative to that
shown in Table 4, on page 19, which is intended for
PROM programmers and requires VID on address A9.
The autoselect command sequence may be written to
an address that is either in the read or
erase-suspend-read mode. The autoselect command
may not be written while the device is actively programming or erasing.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the autoselect command. The
device then enters the autoselect mode. The system
26
Byte Program Command Sequence
When the Embedded Program algorithm is complete,
the device then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using
DQ7, DQ6, or RY/BY#. Refer to the “Write Operation
Status” on page 31 section for information on these
status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program
operation. The program command sequence should
be reinitiated once the device returns to the read
mode, to ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from “0” back to a “1.” Attempting to do so may
cause the device to set DQ5 = 1, or cause the DQ7
and DQ6 status bits to indicate the operation was successful. However, a succeeding read shows that the
data is still “0.” Only erase operations can convert a
“0” to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes to the device faster than using the standard program command sequence. The unlock
bypass command sequence is initiated by first writing
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
two unlock cycles. This is followed by a third write
cycle containing the unlock bypass command, 20h.
The device then enters the unlock bypass mode. A
two-cycle unlock bypass program command sequence
is all that is required to program in this mode. The first
cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the
program address and data. Additional data is programmed in the same manner. This mode dispenses
with the initial two unlock cycles required in the standard program command sequence, resulting in faster
total programming time. Table 10, on page 30 shows
the requirements for the command sequence.
START
Write Program
Command Sequence
Embedded
Program
algorithm
in progress
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the data
90h. The second cycle must contain the data 00h. The
device then returns to the read mode.
The device offers accelerated program operations
through ACC. When the system asserts VHH on ACC,
the device automatically enters the Unlock Bypass
mode. The system may then write the two-cycle Unlock Bypass program command sequence. The device
uses the higher voltage on ACC to accelerate the operation. Note that ACC must not be at VHH for operations other than accelerated programming, or device
damage may result.
Figure 3, on page 27 illustrates the algorithm for the
program operation. Refer to the “Erase and Program
Operations” on page 41 table in the AC Characteristics section for parameters, and Figure 15, on page 42
for timing diagrams.
Data Poll
from System
Verify Data?
No
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note: See Table 10, on page 30 for program command
sequence.
Figure 3.
Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations. Table 10, on
page 30 shows the address and data requirements for
the chip erase command sequence.
October 29, 2004
Am29LV652D
27
P R E L I M I N A R Y
When the Embedded Erase algorithm is complete, the
device returns to the read mode and addresses are no
longer latched. The system can determine the status
of the erase operation by using DQ7, DQ6, DQ2, or
RY/BY#. Refer to “Write Operation Status” on page 31
for information on these status bits.
Any commands written during the chip erase operation
are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be
reinitiated once the device returns to reading array
data, to ensure data integrity.
Figure 4, on page 29 illustrates the algorithm for the
erase operation. Refer to the “Erase and Program Operations” on page 41 tables in the AC Characteristics
section for parameters, and Figure 17, on page 43
section for timing diagrams.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and
the sector erase command. Table 10, on page 30
shows the address and data requirements for the sector erase command sequence.
The device does not require the system to preprogram
prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or timings during these operations.
After the command sequence is written, a sector erase
time-out of 50 µs occurs. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time
between these additional cycles must be less than 50
µs, otherwise erasure may begin. Any sector erase
address and command following the exceeded
time-out may or may not be accepted. It is recommended that processor interrupts be disabled during
this time to ensure all commands are accepted. The
interrupts can be re-enabled after the last Sector
Erase command is written. Any command other than
Se ct o r Er ase o r E ras e Su sp e n d d u ri ng t h e
time-out period resets the device to the read
mode. The system must rewrite the command sequence and any additional addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out (See “DQ3: Sector Erase
Timer” on page 33.). The time-out begins from the ris-
28
ing edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses
are no longer latched. Note that while the Embedded
Erase operation is in progress, the system can read
data from the non-erasing sector. The system can determine the status of the erase operation by reading
DQ7, DQ6, DQ2, or RY/BY# in the erasing sector.
Refer to “Write Operation Status” on page 31 for information on these status bits.
Once the sector erase operation begins, only the
Erase Suspend command is valid. All other commands are ignored. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once the device returns to reading array data, to ensure data integrity.
Figure 4, on page 29 illustrates the algorithm for the
erase operation. Refer to the “Erase and Program Operations” on page 41 tables in the AC Characteristics
section for parameters, and Figure 17, on page 43
section for timing diagrams.
Erase Suspend/Erase Resume
Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. This command is valid only during the
sector erase operation, including the 50 µs time-out
period during the sector erase command sequence.
The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program
algorithm.
When the Erase Suspend command is written during
the sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written
during the sector erase time-out, the device immediately terminates the time-out period and suspends the
erase operation.
After the erase operation is suspended, the device enters the erase-suspend-read mode. The system can
read data from or program data to any sector not selected for erasure. (The device “erase suspends” all
sectors selected for erasure.) Reading at any address
within erase-suspended sectors produces status information on DQ7–DQ0. The system can use DQ7, or
DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to “Write
Operation Status” on page 31 for information on these
status bits.
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
After an erase-suspended program operation is complete, the device returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard byte program operation.
Refer to “Write Operation Status” on page 31 for more
information.
START
Write Erase
Command Sequence
(Notes 1, 2)
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
“Autoselect Mode” on page 19 and “Autoselect Command Sequence” on page 26 sections for details.
Data Poll to Erasing
Bank from System
To resume the sector erase operation, the system
must write the Erase Resume command. The address
of the erase-suspended sector is required when writing this command. Further writes of the Resume command are ignored. Another Erase Suspend command
can be written after the chip resumes erasing.
Embedded
Erase
algorithm
in progress
No
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 10, on page 30 for erase command
sequence.
2. See the section on DQ3 for information on the sector
erase timer.
Figure 4. Erase Operation
October 29, 2004
Am29LV652D
29
P R E L I M I N A R Y
Command Definitions
Table 10.
Read (Note 5)
Addr
Data
1
RA
RD
First
Second
Third
Fourth
Fifth
Addr
Data
Addr
Data
Addr
Data
Addr
Sixth
Data
Addr
Data
1
XXX
F0
Manufacturer ID
4
XXX
AA
XXX
55
XXX
90
X00
01
Device ID
4
XXX
AA
XXX
55
XXX
90
X01
93
Sector Group Protect Verify
(Note 8)
4
XXX
AA
XXX
55
XXX
90
(SA)X02
00/01
Program
4
XXX
AA
XXX
55
XXX
A0
PA
PD
Unlock Bypass
XXX
AA
XXX
55
XXX
20
XXX
A0
PA
PD
Unlock Bypass Reset (Note 10)
3
2
2
XXX
90
XXX
00
Chip Erase
6
XXX
AA
XXX
55
XXX
80
XXX
AA
XXX
55
XXX
10
Sector Erase
6
XXX
AA
XXX
55
XXX
80
XXX
AA
XXX
55
SA
30
Erase Suspend (Note 11)
1
BA
B0
Erase Resume (Note 12)
1
BA
30
CFI Query (Note 13)
1
XX
98
Autoselect (Note 7)
Reset (Note 6)
Bus Cycles (Notes 2–4)
Cycles
Command
Sequence
(Note 1)
Am29LV652D Command Definitions
Unlock Bypass Program (Note 9)
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses
latch on the falling edge of the WE# or CE# (or CE2#) pulse, whichever
happens later.
PD = Data to be programmed at location PA. Data latches on the rising
edge of WE# or CE# (or CE2#) pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A22–A16 uniquely select any sector.
Notes:
1. See Table 1, on page 9 for description of bus operations.
2. All values are in hexadecimal.
8.
The data is 00h for an unprotected sector group and 01h for a
protected sector group.
3.
Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
9.
The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
4.
Unless otherwise noted, address bits A22–A12 are don’t cares.
5.
No unlock or command cycles required when device is in read
mode.
10. The Unlock Bypass Reset command is required to return to the
read mode when the device is in the unlock bypass mode.
6.
The Reset command is required to return to the read mode (or to
the erase-suspend-read mode if previously in Erase Suspend)
when the device is in the autoselect mode, or if DQ5 goes high
(while the device is providing status information).
7.
30
The fourth cycle of the autoselect command sequence is a read
cycle. See the Autoselect Command Sequence section for more
information.
11. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation.
12. The Erase Resume command is valid only during the Erase
Suspend mode.
13. Command is valid when device is ready to read array data or when
device is in autoselect mode.
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
WRITE OPERATION STATUS
The device provides several bits to determine the status of a
program or erase operation: DQ2, DQ3, DQ5, DQ6, and
DQ7. Table 11, on page 34 and the following subsections
describe the function of these bits. DQ7 and DQ6 each offer
a method for determining whether a program or erase operation is complete or in progress. The device also provides a
hardware-based output signal, RY/BY#, to determine
whether an Embedded Program or Erase operation is in
progress or is completed.
invalid. Valid data on DQ0–DQ7 appears on successive read cycles.
“Write Operation Status” on page 34 shows the outputs for Data# Polling on DQ7. Figure 5 shows the
Data# Polling algorithm. Figure 18, on page 44 in the
AC Characteristics section shows the Data# Polling
timing diagram.
DQ7: Data# Polling
START
The Data# Polling bit, DQ7, indicates to the host system
whether an Embedded Program or Erase algorithm is in
progress or completed, or whether the device is in Erase
Suspend. Data# Polling is valid after the rising edge of the
final WE# pulse in the command sequence.
Read DQ7–DQ0
Addr = VA
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to
DQ7. This DQ7 status also applies to programming during
Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to
DQ7. The system must provide the program address to
read valid status information on DQ7. If a program address
falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then the device returns to the
read mode.
DQ7 = Data?
No
No
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the
sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then
the device returns to the read mode. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected
sector, the status may not be valid.
Just prior to the completion of an Embedded Program
or Erase operation, DQ7 may change asynchronously
with DQ0–DQ6 while Output Enable (OE#) is asserted
low. That is, the device may change from providing
status information to valid data on DQ7. Depending on
when the system samples the DQ7 output, it may read
the status or valid data. Even if the device completes
the program or erase operation and DQ7 contains
valid data, the data outputs on DQ0–DQ6 may be still
October 29, 2004
Yes
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Am29LV652D
Figure 5. Data# Polling Algorithm
31
P R E L I M I N A R Y
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output which
indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY#s can be tied together in parallel with a
pull-up resistor to VCC.
Table 11, on page 34 shows the outputs for Toggle Bit
I on DQ6. Figure 6 shows the toggle bit algorithm. Figure 19, on page 45 in the “AC Characteristics” section
shows the toggle bit timing diagrams. Figure 20, on
page 45 shows the differences between DQ2 and DQ6
in graphical form. See also the subsection “DQ2: Toggle Bit II” on page 33.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is in the read mode, the standby
mode, or the device is in the erase-suspend-read
mode.
START
Read DQ7–DQ0
Table 11, on page 34 shows the outputs for RY/BY#.
DQ6: Toggle Bit I
Read DQ7–DQ0
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase
Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
Toggle Bit
= Toggle?
Yes
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or
CE# (or CE2#) to control the read cycles. When the
operation is complete, DQ6 stops toggling.
No
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading
array data.
Read DQ7–DQ0
Twice
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Note: The system should recheck the toggle bit even if
DQ5 = “1” because the toggle bit may stop toggling as DQ5
changes to “1.” See the subsections on DQ6 and DQ2 for
more information.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Program algorithm is complete.
32
DQ5 = 1?
Yes
After an erase command sequence is written, if all sectors
selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading array data. If not all
selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine
whether a sector is actively erasing or is erase-suspended.
When the device is actively erasing (that is, the Embedded
Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling.
However, the system must also use DQ2 to determine
which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on
“DQ7: Data# Polling” on page 31).
No
Am29LV652D
Figure 6. Toggle Bit Algorithm
October 29, 2004
P R E L I M I N A R Y
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for erasure. (The system may use either OE# or CE# or
CE2# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is
erase-suspended. DQ6, by comparison, indicates
whether the device is actively erasing, or is in Erase
Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required
for sector and mode information. Refer to Table 11, on
page 34 to compare outputs for DQ2 and DQ6.
Figure 6, on page 32 shows the toggle bit algorithm in
flowchart form, and the section “DQ2: Toggle Bit II” explains the algorithm. See also the DQ6: Toggle Bit I
subsection. Figure 19, on page 45 shows the toggle bit
timing diagram. Figure 20, on page 45 shows the differences between DQ2 and DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 6, on page 32 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a
row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the
toggle bit after the first read. After the second read, the
system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device
has completed the program or erase operation. The
system can read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the
program or erase operation. If it is still toggling, the device did not completed the operation successfully, and
the system must write the reset command to return to
reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor
October 29, 2004
the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 6, on
page 32).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time exceeded a specified internal pulse count limit. Under these
conditions DQ5 produces a “1,” indicating that the program
or erase cycle was not successfully completed.
The device may output a “1” on DQ5 if the system tries
to program a “1” to a location that was previously programmed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the timing limit is
exceeded, DQ5 produces a “1.”
Under both these conditions, the system must write
the reset command to return to the read mode (or to
the erase-suspend-read mode if the device was previously in the erase-suspend-program mode).
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not
erasure began. (The sector erase timer does not apply
to the chip erase command.) If additional sectors are
selected for erasure, the entire time-out also applies
after each additional sector erase command. When
the time-out period is complete, DQ3 switches from a
“0” to a “1.” If the time between additional sector erase
commands from the system can be assumed to be
less than 50 µs, the system need not monitor DQ3.
See also “Sector Erase Command Sequence” on
page 28
After the sector erase command is written, the system
should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device accepted the
command sequence, and then read DQ3. If DQ3 is
“1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the
device accepts additional sector erase commands. To
ensure the command is accepted, the system software
should check the status of DQ3 prior to and following
each subsequent sector erase command. If DQ3 is
high on the second status check, the last command
might not have been accepted.
Table 11, on page 34 shows the status of DQ3 relative
to the other status bits.
Am29LV652D
33
P R E L I M I N A R Y
Table 11.
Standard
Mode
Erase
Suspend
Mode
Status
Embedded Program Algorithm
Embedded Erase Algorithm
Erase
Erase-Suspend- Suspended Sector
Read
Non-Erase
Suspended Sector
Erase-Suspend-Program
Write Operation Status
DQ7
(Note 2)
DQ7#
0
DQ6
Toggle
Toggle
DQ5
(Note 1)
0
0
DQ3
N/A
1
DQ2
(Note 2)
No toggle
Toggle
RY/BY#
0
0
1
No toggle
0
N/A
Toggle
1
Data
Data
Data
Data
Data
1
DQ7#
Toggle
0
N/A
N/A
0
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
34
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
ABSOLUTE MAXIMUM RATINGS
OPERATING RANGES
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C
Industrial (I) Devices
Ambient Temperature
with Power Applied . . . . . . . . . . . . . –65°C to +125°C
Extended (E) Devices
Ambient Temperature (TA) . . . . . . . . .–40°C to +85°C
Ambient Temperature (TA) . . . . . . . .–55°C to +125°C
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
Supply Voltages
VIO . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +5.5 V
VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0 V–3.6 V
A9, OE#, ACC, and RESET#
(Note 2) . . . . . . . . . . . . . . . . . . . .–0.5 V to +12.5 V
VIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0 V–5.0 V
All others (Note 1) . . . . . . . . . –0.5 V to VCC +0.5 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/Os is –0.5 V. During
voltage transitions, input or I/Os may overshoot VSS to
–2.0 V for periods of up to 20 ns. Maximum DC voltage
on input or I/Os is VCC +0.5 V. See Figure 7, on page 35.
During voltage transitions, input or I/Os may overshoot to
VCC +2.0 V for periods up to 20 ns. See Figure 8, on
page 35.
2. Minimum DC input voltage on A9, OE#, ACC, and
RESET# is –0.5 V. During voltage transitions, A9, OE#,
ACC, and RESET# may overshoot V SS to –2.0 V for
periods of up to 20 ns. See Figure 7, on page 35.
Maximum DC input voltage on A9, OE#, ACC, and
RESET# is +12.5 V which may overshoot to +14.0 V for
periods up to 20 ns.
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
20 ns
20 ns
20 ns
VCC
+2.0 V
VCC
+0.5 V
+0.8 V
–0.5 V
–2.0 V
2.0 V
20 ns
20 ns
Figure 8. Maximum Positive
Overshoot Waveform
Figure 7. Maximum Negative
Overshoot Waveform
October 29, 2004
20 ns
Am29LV652D
35
P R E L I M I N A R Y
DC CHARACTERISTICS (For Two Am29LV065 Devices)
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
ILI
Input Load Current
VIN = VSS to VCC,
VCC = VCC max
ILIT
A9, ACC Input Load Current
VCC = VCC max; A9 = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max
ICC1
VCC Active Read Current
(Notes 1, 2)
CE# (or CE2#) = VIL,
OE# = VIH
ICC2
VCC Active Write Current (Notes 2, 3,
CE# (or CE2#) = VIL, OE# = VIH
4)
ICC3
VCC Standby Current (Note 2)
ICC4
Typ
Max
Unit
±1.0
µA
70
µA
±1.0
µA
5 MHz
9
16
1 MHz
2
4
26
30
mA
CE#, CE2#, RESET# = VCC ± 0.3 V
0.4
10
µA
VCC Reset Current (Note 2)
RESET# = VSS ± 0.3 V
0.4
10
µA
ICC5
Automatic Sleep Mode (Notes 2, 5)
VIH = VCC ± 0.3 V; VIL = VSS ± 0.3 V
0.4
10
µA
IACC
ACC Accelerated Program Current
(Note 4)
CE# = VIL, OE# = VIH
ACC
5
10
mA
VCC
15
30
mA
VIL
Input Low Voltage (Note 6)
–0.5
0.8
V
VIH
Input High Voltage (Note 6)
0.7 x VCC
VCC + 0.3
V
VHH
Voltage for ACC Program
Acceleration
VCC = 3.0 V ± 10%
11.5
12.5
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
VCC = 3.0 V ± 10%
8.5
12.5
V
VOL
Output Low Voltage
IOL = 4.0 mA, VCC = VCC min
0.45
V
VOH1
VOH2
VLKO
Output High Voltage (Note 7)
mA
IOH = –2.0 mA, VCC = VCC min
0.85 VIO
V
IOH = –100 µA, VCC = VCC min
VIO–0.4
V
Low VCC Lock-Out Voltage (Note 7)
2.3
2.5
V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Assumes only one Am29LV065 die being programmed at the same time.
5. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is
400 nA.
6. If VIO < VCC, maximum VIL for CE# (or CE2#) is 0.3 VIO. If VIO < VCC, minimum VIH for CE# (or CE2#) is 0.3 VIO.
7. Not 100% tested.
8. CE# can be replaced with CE2# when referring to the second device within the package.
9. Specifications in the table are for the Am29LV652 i.e. two Am29LV065 dice.
36
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
DC CHARACTERISTICS
Zero-Power Flash
25
Supply Current in mA
20
15
10
5
0
0
500
1000
1500
Note: Addresses are switching at 1 MHz
2000
2500
3000
3500
4000
Time in ns
Figure 9. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
12
3.6 V
10
Supply Current in mA
8
3.0 V
6
4
2
0
1
2
3
4
5
Frequency in MHz
Note: T = 25 °C
Figure 10.
October 29, 2004
Typical ICC1 vs. Frequency
Am29LV652D
37
P R E L I M I N A R Y
TEST CONDITIONS
Table 12.
3.3 V
Test Condition
2.7 kΩ
Device
Under
Test
Test Specifications
90R
Output Load
30
Note: Diodes are IN3064 or equivalent
3.0 V
Input
Test Setup
pF
5
ns
0.0–3.0
V
Input timing measurement
reference levels (See Note)
1.5
V
Output timing measurement
reference levels
0.5 VIO
V
Input Pulse Levels
Figure 11.
100
Input Rise and Fall Times
6.2 kΩ
Unit
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
CL
12R
Note: If VIO < VCC, the reference level is 0.5 VIO.
1.5 V
0.5 VIO V
Measurement Level
Output
0.0 V
Note: If VIO < VCC, the input measurement reference level is 0.5 VIO.
Figure 12. Input Waveforms and Measurement Levels
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
38
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
AC CHARACTERISTICS
Read-Only Operations
Parameter
Speed Options
Test Setup
(Note 1)
JEDEC
Std.
Description
90R
12R
Unit
tAVAV
tRC
Read Cycle Time (Note 2)
Min
90
120
ns
tAVQV
tACC
Address to Output Delay
CE#, OE# = VIL
Max
90
120
ns
tELQV
tCE
Chip Enable to Output Delay
OE# = VIL
Max
90
120
ns
tGLQV
tOE
Output Enable to Output Delay
Max
35
50
ns
tEHQZ
tDF
Chip Enable to Output High Z (Note 2)
Max
30
30
ns
tGHQZ
tDF
Output Enable to Output High Z (Note 2)
Max
30
30
ns
tAXQX
tOH
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First
Min
0
ns
Min
0
ns
tOEH
Read
Output Enable Hold
Toggle and
Time (Note 2)
Data# Polling
Min
10
ns
Notes:
1. All test setups assume VIO = VCC.
2. Not 100% tested.
3. See Figure 11, on page 38 and Table 12, on page 38 for
test specifications
4. CE# can be replaced with CE2# when referring to the second device within the package.
.
tRC
Addresses Stable
Addresses
tACC
CE# or CE2#
tRH
tRH
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Figure 13.
October 29, 2004
Read Operation Timings
Am29LV652D
39
P R E L I M I N A R Y
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tReady
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note)
Max
20
µs
tReady
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
Reset High Time Before Read (See Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Note: Not 100% tested.
RY/BY#
CE# or CE2#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE# or CE2#, OE#
RESET#
tRP
Figure 14. Reset Timings
40
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
AC CHARACTERISTICS
Erase and Program Operations
Parameter
Speed Options
JEDEC
Std.
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tAH
Address Hold Time
Min
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
tDVWH
tDS
Data Setup Time
Min
tWHDX
tDH
Data Hold Time
Min
0
ns
tOEPH
Output Enable High during toggle bit polling
Min
20
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Byte Programming Operation (Note 2)
Typ
5
µs
tWHWH1
tWHWH1
Accelerated Byte Programming Operation (Note 2)
Typ
4
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
1.6
sec
tVHH
VHH Rise and Fall Time (Note 1)
Min
250
ns
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Write Recovery Time from RY/BY#
Min
0
ns
Program/Erase Valid to RY/BY# Delay
Min
90
ns
tWLAX
tBUSY
90R
12R
Unit
90
120
ns
45
50
0
45
ns
50
35
ns
50
ns
ns
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” on page 50 section for more information.
3. CE# can be replaced with CE2# when referring to the second device within the package.
October 29, 2004
Am29LV652D
41
P R E L I M I N A R Y
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
Read Status Data (last two cycles)
XXXh
PA
PA
PA
tAH
CE# or CE2#
tCH
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
PD
A0h
Data
Status
tBUSY
DOUT
tRB
RY/BY#
VCC
tVCS
Note: PA = program address, PD = program data, DOUT is the true data at the program address.
Figure 15.
Program Operation Timings
VHH
ACC
VIL or VIH
VIL or VIH
tVHH
Figure 16.
42
tVHH
Accelerated Program Timing Diagram
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SA
VA
555 h for chip erase
tAH
CE# or CE2#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
Note: SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status” on page 31.
Figure 17. Chip/Sector Erase Operation Timings
October 29, 2004
Am29LV652D
43
P R E L I M I N A R Y
AC CHARACTERISTICS
tRC
Addresses
VA
VA
VA
tACC
tCE
CE# or CE2#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ0–DQ6
Status Data
Status Data
True
Valid Data
High Z
True
Valid Data
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 18.
44
Data# Polling Timings (During Embedded Algorithms)
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
AC CHARACTERISTICS
tAHT
tAS
Addresses
tAHT
tASO
CE# or CE2#
tCEPH
tOEH
WE#
tOEPH
OE#
tDH
DQ6/DQ2
tOE
Valid Data
Valid
Status
Valid
Status
Valid
Status
(first read)
(second read)
(stops toggling)
Valid Data
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status
read cycle, and array data read cycle
Figure 19.
Enter
Embedded
Erasing
WE#
Erase
Suspend
Erase
Toggle Bit Timings (During Embedded Algorithms)
Enter Erase
Suspend Program
Erase
Suspend
Program
Erase Suspend
Read
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle
DQ2 and DQ6.
Figure 20.
October 29, 2004
DQ2 vs. DQ6
Am29LV652D
45
P R E L I M I N A R Y
AC CHARACTERISTICS
Temporary Sector Unprotect
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
µs
tRRB
RESET# Hold Time from RY/BY# High for
Temporary Sector Group Unprotect
Min
4
µs
Note: Not 100% tested.
VID
RESET#
VID
VSS, VIL,
or VIH
VSS, VIL,
or VIH
tVIDR
tVIDR
Program or Erase Command Sequence
CE# or CE2#
WE#
tRRB
tRSP
RY/BY#
Figure 21.
46
Temporary Sector Group Unprotect Timing Diagram
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
AC CHARACTERISTICS
VID
VIH
RESET#
SA, A6,
A1, A0
Valid*
Valid*
Sector Group Protect/Unprotect
Data
60h
60h
Valid*
Verify
40h
Status
1 µs
Sector Group Protect: 150 µs
Sector Group Unprotect: 15 ms
CE# or CE2#
WE#
OE#
* For sector group protect, A6 = 0, A1 = 1, A0 = 0. For sector group unprotect, A6 = 1, A1 = 1, A0 = 0.
Figure 22.
October 29, 2004
Sector Group Protect and Unprotect Timing Diagram
Am29LV652D
47
P R E L I M I N A R Y
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Parameter
Speed Options
JEDEC
Std
Description
90R
12R
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
120
ns
tAVWL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
45
50
ns
tDVEH
tDS
Data Setup Time
Min
45
50
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
tEHEL
tCPH
CE# Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Byte Programming Operation (Note 2)
Typ
5
µs
tWHWH1
tWHWH1
Accelerated Byte Programming Operation (Note 2)
Typ
4
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
1.6
sec
0
45
ns
50
ns
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. CE# can be replaced with CE2# when referring to the second device within the package.
48
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
AC CHARACTERISTICS
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or 2
tCP
CE# or CE2#
tWS
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
Figure 23. Alternate CE# Controlled Write (Erase/Program) Operation Timings
October 29, 2004
Am29LV652D
49
P R E L I M I N A R Y
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
1.6
15
sec
Chip Erase Time
205
Excludes 00h programming
prior to erasure (Note 4)
sec
Byte Program Time
5
150
µs
Accelerated Byte Program Time
4
120
µs
Chip Program Time (Note 3)
42
126
sec
Excludes system level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 3.0 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 10, on page 30 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all device connections (including
A9, OE#, and RESET#) except I/Os
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/Os
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
VCC Current
Note: Includes all connections except VCC. Test conditions: VCC = 3.0 V, one connection at a time.
INPUT/OUTPUT CAPACITANCE
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
12
16
pF
COUT
Output Capacitance
VOUT = 0
12
16
pF
CE/CE2
Control Pin Capacitance
VIN = 0
6
8
pF
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter Description
Minimum Pattern Data Retention Time
50
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
PHYSICAL DIMENSIONS
FSA063—63-Ball Fine-Pitch Ball Grid Array (FBGA) 11 x 12 mm package
October 29, 2004
Am29LV652D
51
P R E L I M I N A R Y
REVISION SUMMARY
Revision A (May 24, 2001)
Ordering Information
Removed the Optional Processing from the order
number.
Initial release.
Revision A+1 (July 31, 2001)
Revision A+3 (January 10, 2002)
AC Characteristics—Alternate CE# Controlled
Erase and Program Table
Global
tWHWH1—Byte Programming Operation: Changed typical value from 11 µs to 5 µs.
tWHWH1 —Accelerated Byte Programming Operation:
Changed typical value from 7 µs to 4 µs.
Clarified description of VersatileIO (VIO) in the following sections: Distinctive Characteristics; General Description; VersatileIO (VIO) Control; Operating Ranges;
DC Characteristics; CMOS compatible.
Revision A+2 (August 14, 2001)
Revision A+4 (October 29, 2004
Global
Global
Removed the speed options for 100 ns with VIO = 1.8
V – 2.9 V and 120 ns with V I O = 1.8 V – 2.9 V.
Changed the speed option for 120 ns with VIO = 3.0 V
– 5.0 V from 120R to 12R.
Added Spansion Cover Sheet
General Description and Device Bus Operations
Ordering Information
Added “For voltage levels below 3 V, contact an AMD
representative for more information.” to VersatileI/O™
text.
Added two package types to temperature range.
Added reference links to page numbers
Added Colophon
Valid Combination for FBGA Packages
Added MAF and MAK to order number.
Added F and K to Package Marking.
52
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion LLC will not be liable
to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the
Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the
prior authorization by the respective government entity will be required for export of those product
Trademarks
Copyright © 2000-2004 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies
53
Am29LV652D
October 29, 2004