MMBT3904

MMBT3904
SOT-23 Transistor(NPN)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Features
—
As complementary type the PNP
transistor MMBT3906 is recommended
—
Epitaxial planar die construction
MARKING: 1AM
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
200
mA
PC
Total Device Dissipation
200
mW
RθJA
Thermal Resistance Junction to Ambient
625
℃/W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55 to +150
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
VCBO
IC= 10μA, IE=0
60
V
Collector-emitter breakdown voltage
VCEO
IC= 1mA, IB=0
40
V
Emitter-base breakdown voltage
VEBO
IE=10μA, IC=0
6
V
Collector cut-off
current
ICBO
VCB=60V, IE=0
0.1
μA
Collector cut-off
current
ICEX
VCE=30V,VBE(off)=3V
50
nA
IEBO
VEB=5V, IC=0
0.1
μA
hFE(1)
VCE=1V, IC=10mA
100
hFE(2)
VCE=1V, IC= 50mA
60
hFE(3)
VCE=1V, IC= 100mA
30
Collector-emitter saturation voltage
VCE(sat)
IC=50mA, IB= 5mA
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC= 50mA, IB= 5mA
0.95
V
Emitter cut-off
current
DC current gain
400
Transition frequency
fT
VCE= 20V, IC= 10mA,f=100MHz
Delay Time
td
VCC=3V,VBE=-0.5V
35
nS
Rise Time
tr
IC=10mA, IB1=-IB2=1.0mA
35
nS
Storage Time
ts
VCC=3.0V,IC=10mAdc
200
nS
Fall Time
tf
IB1=-IB2=1mA
50
nS
CLASSIFICATION OF
Rank
Range
300
MHz
hFE(1)
O
Y
G
100-200
200-300
300-400
MMBT3904
SOT-23 Transistor(NPN)
Typical Characteristics