2N7000 Mosfet (N-Channel) TO-92 1. SOURCE 2. GATE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VDS Drain-Source voltage 60 V ID Drain Current 200 mA PD Power Dissipation 350 mW RӨJA Thermal Resistance, junction to Ambient 357 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage* Symbol Test conditions MIN V(BR)DSS VGS=0 V, ID=10μA 60 Vth(GS) VDS=VGS, ID=1mA 0.8 TYP MAX UNIT V Gate-body Leakage lGSS VDS=0 V, VGS=±15 V ±10 nA Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V 1 μA On-state Drain Current ID(ON) VGS=4.5 V, VDS=10 V Drain-Source On-Resistance* rDS(0n) Forward Trans conductance* Drain-source on-voltage* Input Capacitance gfs VDS(on) 75 mA VGS=4.5V, ID=75mA 6 VGS=10V, ID=500mA 5 VDS=10 V, ID=200mA 100 ms VGS=10V, ID=500mA 2.5 V VGS=4.5V, ID=75mA 0.45 V 60 Ciss Output Capacitance COSS Reverse Transfer Capacitance CrSS Ω VDS=25V, VGS=0V, f=1MHz 25 pF 5 * pulse test. SWITCHING TIME Turn-on Time td(on) Turn-off Time td(off) VDD=15 V, RL=30Ω ID=500mA,VGEN=10 V RG=25 Ω 10 10 ns 2N7000 Mosfet (N-Channel) Typical Characteristics 2N7000 Mosfet (N-Channel)