3DD13002B(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 1.25MAX 3. BASE 2.92 MIN 12.7 6.35 MIN MIN 0.41 0.41 0.53 0.48 Seating Plane Features power switching applications 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC Collector Power Dissipation 0.9 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 4.32 5.33 3.18 4.19 2.03 2.67 2.03 2.67 1.14 1.40 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA,IC=0 6 V ICBO VCB= 610V,IE=0 100 µA ICEO VCB= 405V,IE=0 100 µA IEBO VEB= 6 V, IC=0 100 µA hFE1 VCE= 10 V, IC=200mA 9 hFE2 VCE= 10 V, IC=0.25mA 5 Collector cut-off current Emitter cut-off current Dc current 40 gain Collector-emitter saturation voltage VCE(sat) IC=200mA, IB=40mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=200mA, IB=40mA 1.1 V Transition frequency fT Fall time tf Storage time ts VCE=10V, IC=100mA f =1MHz IC=1A, 5 MHz IB1=-IB2=0.2A VCC=100V 0.5 µs 2.5 µs CLASSIFICATION OF hFE1 Range 9-15 15-20 20-25 25-30 30-35 35-40 3DD13002B(NPN) TO-92 Bipolar Transistors Typical characteristics