MMDT2907A SOT-363 Transistor(PNP) SOT-363 Features Complementary NPN Type available MMDT2222A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Dimensions in inches and (millimeters) MARKING: K2F ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -10μA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA, IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -10 nA Collector cut-off current ICEX VCE=-30V,VEB(Off)=-0.5V -50 nA Emitter cut-off current IEBO VEB=-5V, IC=0 -10 nA hFE(1) VCE=-10V, IC= -0.1mA 75 hFE(2) VCE=-10V, IC= -1mA 100 hFE(3) VCE=-10V, IC=-10mA 100 hFE(4) VCE=-10V, IC= -150mA 100 hFE(5) VCE=-10V, IC=-500mA 50 VCE(sat)1 IC=-150mA, IB=-15mA -0.4 V VCE(sat)2 IC=-500mA, IB=- 50mA -1.6 V VBE(sat)1 IC=-150mA, IB=-15mA -1.3 V VBE(sat)2 IC=-500mA, IB= -50mA -2.6 V DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency fT Output Capacitance Cob VCB=-10V, IE= 0,f=1MHz 8 pF Input Capacitance Cib VEB=-2V, IC= 0,f=1MHz 30 pF 10 nS 40 nS Delay time VCE=-20V, IC= -50mA,f=100MHz 300 td VCC=-30V,IC=-150mA, IB1=-15mA 200 MHz Rise time tr Storage time tS VCC=-6V, IC=-150mA, 225 nS Fall time tf IB1= IB2= -15mA 60 nS MMDT2907A SOT-363 Transistor(PNP) Typical Characteristics MMDT2907A SOT-363 Transistor(PNP)