2SB1202(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER Features 1 2 3 Adoption of FBET,MBIT processes Large current capacity and wide ASO Low collector-to-emitter saturation voltage Fast switching speed TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current –Continuous -3 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol Dimensions in inches and (millimeters) unless Test otherwise specified) conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -6 V Collector cut-off current ICBO VCB=-40V, IE=0 -1 µA Emitter cut-off current IEBO VEB=-4V, IC=0 -1 µA hFE(1) VCE=-2V, IC=-100mA 100 hFE(2) VCE=-2V, IC=-3A 35 VCE(sat) IC=-2A, IB=-100mA fT VCE=-10V, IC=-50mA 150 MHz Cob VCB=-10V, IE=0, f=1MHz 39 pF 560 DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance CLASSIFICATION OF Rank Range -0.7 hFE(1) R S T U 100-200 140-280 200-400 280-560 V 2SB1202(PNP) TO-251/TO-252-2L Transistor Typical Characteristics 2SB1202(PNP) TO-251/TO-252-2L Transistor