2SA1740 SOT-89 Transistor(PNP) SOT-89 1. BASE 2. COLLECTOR 1 4.6 4.4 1.8 1.4 1.6 1.4 2 B 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN High breadown voltage Excellent hFE linearlity 0.44 0.37 0.13 0.53 0.48 0.40 2x) 0.35 1.5 3.0 B Dimensions in inches and (millimeters) Marking: AK MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Value -400 -400 -5 -200 500 150 -55-150 Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -400 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -400 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-300V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-4V,IC=0 -100 nA DC current gain hFE VCE=-10V,IC=-50mA Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-50mA,IB=-5mA -1 V fT VCE=-30V,IC=-10mA 70 MHz VCB=-30V,IE=0,f=1MHz 5 pF 0.25 μs 5 μs Transition frequency Collector output capacitance Cob Turn-ON Time ton Turn-OFF Time toff CLASSIFICATION OF Rank Range VCC=-150V,Ic=-50mA, IB1=-IB2=-5mA 60 200 hFE D 60-120 E 100-200 2SA1740 SOT-89 Transistor(PNP) Typical Characteristics