3DD13002(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features power switching applications MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 1.25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ TO-252-2L Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA，IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA，IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA，IC=0 ICBO VCB= 600V，IE=0 100 µA ICEO VCB= 400V，IE=0 100 µA IEBO VEB= 7V， IC=0 100 µA hFE1 VCE= 10 V, IC= 200mA 9 hFE2 VCE= 10 V, IC= 0.25mA 5 6 Collector cut-off current Emitter cut-off current Dc current 40 gain Collector-emitter saturation voltage VCE(sat) IC=200mA, IB= 40mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=200mA, IB= 40mA 1.1 V VCE=10V, IC=100mA 5 MHz Transition frequency fT Fall time tf IC=1A, IB1=-IB2=0.2A 0.5 µs Storage time ts VCC=100V 2.5 µs f =1MHz CLASSIFICATION OF hFE1 Range 9-15 15-20 20-25 25-30 30-35 35-40 3DD13002(NPN) TO-251/TO-252-2L Transistor Typical characteristics