FMS3/FMS4 Dual Transistor SOT-23-5L 2 .8 20 3. 020 0° 8° 0 .3 00 0. 500 0 .3 00 0. 600 Features 2. 650 2 .950 1 .5 00 1. 700 High breakdown voltage 0. 950 0 .1 00 0. 200 1. 800 2 .000 0. 000 0 .100 1 .0 50 1. 250 1. 050 1 .150 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Dimensions in millimeters Value Units VCBO Collector- Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -50 mA PC Collector Power Dissipation 0.3 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ MARKING: FMS3:S3 FMS4:S4 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50μA, IE=0 -120 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -120 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA, IC=0 -5 V Collector cut-off current ICBO VCB=-100V, IE=0 -0.5 μA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.5 μA DC current gain hFE VCE=-6V, IC=-2mA Collector-emitter saturation voltage Transition frequency VCE(sat) fT 180 820 IC=-10mA, IB=-1mA VCE=-12V, IC=-2mA, f=100MHz -0.5 140 V MHz FMS3/FMS4 Dual Transistor Typical Characteristics