MMBT2222A SOT-23 Transistor(NPN) SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Value Units 75 V Collector-Base Voltage VCEO Collector-Emitter Voltage 40 VEBO Emitter-Base Voltage 6 IC Collector Current -Continuous 600 PC Collector Power Dissipation 350 TJ Junction Temperature 150 Tstg Storage Temperature -55to+150 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN V V mA mW ℃ ℃ TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 10μA, IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 10 nA Collector cut-off current ICEX VCE=60V, VBE(off)=3V 10 nA Emitter cut-off current IEBO VEB= 3V,IC=0 0.1 μA hFE(1) VCE=10V, IC=150mA 100 hFE(2) VCE=10V, IC= 0.1mA 40 VCE=10V, IC= 500mA 42 DC current gain hFE(3) Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Transition frequency fT Delay time td Rise time tr Storage time tS Fall time tf IC=500 mA, IB= 50mA IC=150 mA, IB=15mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA VCE=20V, IC= 20mA f=100MHz 300 1 0.3 2.0 1.2 0.6 300 Range V MHz VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA 10 nS 25 nS VCC=30V, IC=150mA IB1=-IB2=15mA 225 nS 60 nS CLASSIFICATION OF hFE(1) Rank V L H 100-200 200-300 MMBT2222A SOT-23 Transistor(NPN) MMBT2222A SOT-23 Transistor(NPN)