S9018(NPN) TO-92 Bipolar Transistors 1. EMITTER 2. BASE TO-92 3. COLLECTOR Features High Current Gain Bandwidth Product fT=1.1 GHz (Typ) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 0.4 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC= 0. 1mA, IB=0 18 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 4 V Collector cut-off current ICBO VCB= 20V, IE=0 0.1 μA Collector cut-off current ICEO VCE=15V,IB=0 0.1 μA Emitter cut-off current IEBO VEB=3V, IC=0 0.1 μA DC current gain hFE VCE=5V, IC= 1mA Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=10mA,IB=1mA 1.42 V fT VCE=5 V, IC=5mA f =400MHz Transition frequency CLASSIFICATION OF Rank Range 28 270 600 MHz hFE D E F G H I J 28-45 39-60 54-80 72-108 97-146 132-198 180-270 S9018(NPN) TO-92 Bipolar Transistors Typical Characteristics