2SC3279(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V IC Collector Current –Continuous 2 A PC Collector Power Dissipation 750 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA , IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 10 V Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 6 V Collector cut-off current ICBO VCB=30 V , IE=0 0.1 µA Emitter cut-off current IEBO VEB=6 V , 0.1 µA DC current gain hFE VCE=1V, Collector-emitter saturation voltage VCE(sat) IC=0 IC=0.5A 140 600 IC=2A, IB= 100mA 0.82 V 1.5 V Base-emitter voltage VBE IC= 2A, VCE=1V Transition frequency fT VCE=1V, IC= 0.5A 150 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 27 pF CLASSIFICATION OF Rank Range hFE L M N P 140-240 200-330 300-450 420-600 2SC3279(NPN) TO-92 Bipolar Transistors Typical Characteristics