3DD13003(NPN)

3DD13003(NPN)
TO-220 Transistor
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
1
Features
—
3
2
power switching applications
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Units
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current -Continuous
1.5
A
PC
Collector Power Dissipation
2
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
Dimensions in inches and (millimeters)
unless
Test
otherwise
conditions
specified)
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC =5mA, IE=0
700
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA, IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE=2mA, IC=0
9
V
Collector cut-off current
ICBO
VCB=700V,IE=0
1
mA
Collector cut-off current
ICEO
VCE=400V,IB=0
0.5
mA
Emitter cut-off current
IEBO
VEB=9V, IC=0
1
mA
hFE1
VCE=5V, IC= 0.5 A
8
40
hFE2
VCE=5V, IC= 1.5A
5
Collector-emitter saturation voltage
VCE(sat)
IC=1A,IB=0.25A
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=1A,IB=0.25A
1.2
V
Transition frequency
fT
VCE=10V,Ic=100mA, f =1MHz
Fall time
tf
IC=1A, IB1=-IB2=0.2A, VCC=100V
Storage time
ts
IC=0.25A
DC current gain
CLASSIFICATION OF
5
MHz
1.8
0.5
µs
6.6
µs
hFE1
Rank
Range
8-10
10-15
15-20
20-25
25-30
30-35
35-40
3DD13003(NPN)
TO-220 Transistor
Typical Characteristics