MMBT3906 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage Collector Current -Continuous -5 V -0.2 A IC PC Collector Power Dissipation 0.3 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -10μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -5 V Collector cut-off current ICBO VCB= -40V, E=0 -0.1 μA Collector cut-off current ICEX VCE=-30V,VBE(off)=-3V -50 nA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA hFE(1) VCE=-1V, IC=-10mA 100 hFE(2) VCE= -1V, IC=-50mA 60 hFE(3) VCE= -1V, IC=-100mA 30 DC current gain 300 Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA -0.4 V Base-emitter saturation voltage VBE(sat) IC=- 50mA, IB=- 5mA -0.95 V Transition frequency fT VCE=-20V, IC=-10mA, f=100MHz Delay Time td Rise Time tr VCC=-3.0V,VBE=-0.5V IC=-10mA,IB1=-1.0mA Storage Time ts Fall Time tf 250 VCC=-3.0V,IC=-10mA IB1=IB2=-1.0mA CLASSIFICATION OF hFE1 Rank Range O Y 100-200 200-300 MHz 35 nS 35 nS 225 nS 75 nS MMBT3906 SOT-23 Transistor(PNP) Typical Characteristics MMBT3906 SOT-23 Transistor(PNP)