MJD127(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP127 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -8 A PC Collector Power Dissipation 1.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -100 V Collector-emitter breakdown voltage V(BR)CEO IC=-30mA,IB=0 -100 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-100V,IE=0 -10 µA Collector-emitter cut-off current ICEX VCE=-100V,VBE(off)=-1.5V -10 µA Emitter cut-off current IEBO VEB=-5V,IC=0 -2 mA hFE(1) VCE=-4V,IC=-4A 1000 hFE(2) VCE=-4V,IC=-8A 100 DC current gain Collector-emitter saturation voltage VCE(sat) 1* IC=-4A,IB=-16mA -2 V * IC=-8A,IB=-80mA -4 V IC=-8A,IB=-80mA -4.5 V VCE=-4V,IC=-4A -2.8 V VCB=-10V,IE=0,f=0.1MHz 300 pF VCE(sat) 2 Base-emitter saturation voltage 12000 VBE(sat) * * Base-emitter voltage VBE Collector output capacitance Cob *Pulse Test: Pulse Width≤380µs, Duty Cycle≤2% MJD127(NPN) TO-251/TO-252-2L Transistor Typical Characteristics