ESD6V8WT

ESD6V8WT
Silicon Epitaxial Zener Diodes
SOD-523
0.135
0.127
Bi-direction
Ultra small mold type.
High reliability
Pb / RoHS Free
0.70
0.60
—
—
—
—
0.85
0.75
Features
0.4
0.3
1.25
1.15
1.65
1.55
Dimensions in millimeters
Absolute Maximum Ratings (Ta = 25 °C)
Parameter
Symbol
Value
Unit
Peak pulse power (tp = 10 x 1000 μs)
PPK
10
W
Power Dissipation
PD
150
mW
Junction Temperature
TJ
150
°C
TSTG
-55 to + 150
°C
Storage Temperature Range
Electrical Characteristics
(Ta = 25 °C)
Parameter
Symbol
Min.
Max.
Unit
Zener Voltage at I Z = 1mA
VZ
5.5
8.0
V
Reverse Current at V R = 3.5 V
IR
-
0.01
μA
CT
-
30
pF
-
-
15
KV
-
-
25
KV
Capacitance between terminals
at VR = 0 V, f = 1MHz ,
ESD Voltage Capability (Contact Discharge Mode)
at Discharge Capacitance / Resistance: 150 pF / 330 Ω
ESD Voltage Capability (Air Discharge Mode)
at Discharge Capacitance / Resistance: 150 pF / 330 Ω
ESD6V8WT
Silicon Epitaxial Zener Diodes
RATING AND CHARACTERISTIC CURVES ( ESD6V8WT )