1N6263 Small Signal Schottky Diodes VOLTAGE RANGE: 60 V POWER DISSIPATION:400 mW Features DO - 35(GLASS) For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and low logic level applications Mechanical Data Case:JEDEC DO--35,glass case Dimensions in millimeters Polarity: Color band denotes cathode end Weight: Approx. 0.13 gram ABSOLUTE RATINGS(LIMITING VALUES) Symbols Value UNITS VRRM 60.0 V Pow er dissipation (Infinite Heat Sink) Ptot 4001) mW Maximum single cycle surge 10µs square w ave IFSM 2.0 A TJ 125 TSTG c-55 ---+ 150 Peak reverse voltage Junction tenperature Storage temperature range 1)Valid provided that electrodes are kept at ambient temperature. ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherw ise specified) Reverse breakdow n voltage Leakage current @ IR=10 A Min. VR 60.0 Typ. Max. UNITS V IR 200.0 nA IF=1mA VF 0.41 V IF=15mA VF 1.0 V @ VR=0V,f=1MHz CJ 2.2 pF trr 1 ns RθJA 0.3 @ VR=50V Forw ard voltage drop @ Junction capacitance Symbols Reverse recovery time @ IF=IR=5mA,recover to 0.1 IR Termal resistance junction to ambient air /mW 1N6263 Small Signal Schottky Diodes Ratings AND Charactieristic Curves FIG.1 -- TYPICAL VARIATION OF FWD. CURRENT VS FWD. XXXXXXXX-VOLTAGE FOR PRIMARY CONDUCTION THROUGH THE XXXXXXXX-SCHOTTKY BARRIER FIG.2 -- TYPICAL FORWARD CONDUCTION CURVE OF XXXXX COMBINATION SCHOTTKY BARRIER AND PN XXXXX JUNCTION GUARD RING mA mA 10 100 5.0 2.0 80 I F 1.0 IF 0.5 60 0.2 0.1 40 0.05 20 0.02 0.01 0 1 0.5 0 V 0 0.5 VF VF FIG.3 -- TYPICAL VARIATION OF REVERSE CURRENT AT XXXXXXXXXVARIATION TEMPERATURES V FIG.4 -- TYPICAL CAPACITANCE CURVE AS A XXXXX- JUNCTION OF REVERSE VOLTAGE A pF 100 50 150 2 125℃ 20 TJ=25 10 IR 1 100℃ CJ 5 75℃ 2 1 50 1 0.5 0.2 0.1 25℃ 0.05 0.02 0.01 0 10 20 30 40 VR 50 V 0 0 10 20 30 40 VR 50V