SM3600AP Magnetic Sensor Module OVERVIEW The SM3600AP is a magnetic sensor module incorporating magnetic sensor elements, amplifier IC, and bias magnet in a compact package. The sensor functions are integrated into a compact package to help reduce the effects of external noise. The magnetic sensor elements employ ultra-small nanogranular tunnel magnetoresistance (TMR*1) elements for high-sensitivity magnetic field detection. The SM3600AP includes a built-in auto-bias function to achieve stable output characteristics. The SM3600AP supports non-contact, magnetic field detection, making it ideal for a diverse range of identification devices. *1. TMR: Tunnel Magneto-Resistance PACKAGE DIMENSIONS (Unit: mm) 1.0 +0.3 -0.05 3.6±0.3 6.8±0.5 6.5±0.2 9.4±0.3 1.5 +0.3 -0.05 3.2±0.2 ▪ Non-contact magnetic detection function ▪ Magnetic sensor element, amplifier IC, and bias magnet fabricated in a single package ▪ Amplifier IC built-in Amplification factor (Gain): 60dB, DC output ▪ Auto-bias function built-in Amplified signal output of magnetic field variation with VDD/2 reference ▪ High stable output independent of detection speed ▪ Magnetic detection width: 3.0mm ▪ Supply voltage range: 4.5 to 5.5V ▪ Output voltage range: 1.0 to 4.0V (When VDD = 5.0V) ▪ Operating temperature range: -40 to +80°C ▪ Package: DIP-8 (9.4mm×6.5mm×6.8mm) 2.7±0.1 1.1±0.1 FEATURES 2.54 0.89TYP 0.5±0.1 7.6 0.25 +0.1 -0.05 0.25 M 0°~15° ORDERING INFORMATION Device Package SM3600AP-G*1 8 pin DIP *1. “-G” option code lead-free package TYPICAL APPLICATION CIRCUIT 0→5V 1μF 5V VDD CE SET VREF SM3600AP OUT ADC or CMP 820pF(C) G1 C=1/ (2π×100k×fc) VSS SEIKO NPC CORPORATION - 1 SM3600AP PINOUT Top View CE 1 8 VDD VREF 2 7 TEST SET 3 6 G1 VSS 4 5 OUT DIP8 PIN DESCRIPTION No. Name I/O*1 1 CE I Chip enable (High: Normal operating mode, Low: standby mode) 2 VREF O Reference voltage output (output VDD/2) 3 SET I Auto-bias function input. When SET goes Low → High, the voltage on OUT is adjusted to VDD/2 using the auto-bias function. Description 4 VSS S Ground 5 OUT O Magnetic detector signal output (output VSS level when CE=Low) 6 G1 O Low-pass filter capacitor connection A low-pass filter is formed by connecting a capacitor between G1 and OUT pins. 7 TEST O Test output. Leave open for normal operation 8 VDD S Supply voltage (normally 5V) *1. I: Input pin O: Output pin S: Supply pin BLOCK DIAGRAM VDD CE VREF VREF Magnetic Sensor AMP + 100kΩ AMP Magnetic Sensor 100kΩ Offset Correction Circuit VSS OUT – SET G1 TEST SEIKO NPC CORPORATION - 2 SM3600AP SPECIFICATIONS Absolute Maximum Ratings VSS=0V Parameter Symbol Conditions Rating Unit -0.3 to +6.0 V Supply voltage*1 VDD VDD pin *1*2 Input voltage VIN CE pin, SET pin -0.3 to VDD+0.3 V Output voltage*1*2 VOUT VREF pin, OUT pin, G1 pin, TEST pin -0.3 to VDD+0.3 V Storage temperature*3 TSTG -40 to +85 °C - *1 These ratings should not be exceeded, not even momentarily. If a rating is exceeded, there is a risk of IC failure, deterioration in characteristics, and decrease in reliability. *2 VDD value satisfies the recommended operating conditions. *3 Parameters should not exceed ratings. If a rating is exceeded, there is a risk of deterioration in characteristics and decrease in reliability. Recommended Operating Conditions VSS=0V Parameter Supply voltage Operating ambient temperature Symbol VDD Ta Conditions MIN TYP MAX Unit 4.5 5.0 5.5 V -40 +25 +80 °C VDD pin - Note. Electrical characteristics are guaranteed when operated within the recommended operating conditions. SEIKO NPC CORPORATION - 3 SM3600AP Electrical Characteristics DC Characteristics VDD=4.5 to 5.5V, Ta=-40 to +80°C unless otherwise noted. Parameter Symbol Conditions MIN TYP MAX Unit Standby mode current consumption IDDS CE=Low (standby mode), Ta=25°C - 100 300 μA Operating mode current consumption IDDO CE=SET=High (operating mode) - 3.5 7.0 mA 0.8VDD - - V - - 0.2VDD V VIH Logic input voltage VIL CE Pin, SET Pin Logic input current ILI CE Pin, SET Pin Ta=25°C -1 0 1 μA Output voltage range VO OUT Pin 1 - VDD-1 V Output reference voltage VREF VREF Pin 0.49VDD 0.50VDD 0.51VDD V Auto-bias accuracy VO2 OUT Pin 0.46VDD 0.50VDD 0.54VDD V Maximum load resistance RL OUT Pin 100 - - kΩ MIN TYP MAX Unit - 25 - mVp-p AC Characteristics VDD=4.5 to 5.5V, Ta=-40 to +80°C unless otherwise noted. Parameter Symbol Output noise*1 VNOISE Conditions OUT Pin Cutoff frequency： 2kHz, Ta=25°C *1. Typical noise value. Measurement circuit diagrams Measurement Parameters: IDDS, IDDO, VO, VREF, VO2 1µF VDD Measurement Parameters: VIH, VIL, ILI 1µF CE SET VDD CE SET VREF VREF (open) SM3600AP OUT SM3600AP G1 G1 (open) VSS TEST (open) OUT (open) VSS TEST (open) SEIKO NPC CORPORATION - 4 SM3600AP Magnetic Characteristics VDD=4.5 to 5.5V, Ta=25°C unless otherwise noted. Parameter Symbol Conditions MIN TYP MAX Unit 3.0 4.0 - V/Oe 0.037 0.050 - V/(A/m) 3.0 3.5 - mm VMG OUT pin After auto-bias setting, H=0Oe, VDD=5.0V WMG OUT pin Width of magnetic material detected by sensor, Detection range of −9.54dB (1/3) to maximum amplitude, Gap=0.5mm Spatial resolution*2 RMG OUT pin Clearance between magnetic materials detected by sensor, Detection range of −9.54dB (1/3) to maximum amplitude, Gap=0.5mm - 0.8 1.2 mm Surface magnetic flux density BMG Magnetic flux density at package surface - 60* - mT Magnetic sensitivity *1 Magnetic detection width *Typical value *1. Magnetic detection width measurement method When gap (package surface to magnetic pattern separation) = 0.5mm 2.0mm SM3600AP 0.1mm flow direction .0m 1 m 0.1m m 1/3Vp-p max Vp-p max 2.0mm WMG =(count number of pulse -1) ×0.1mm magnetic pattern *2. Spatial resolution measurement method When gap (package surface to magnetic pattern separation) = 0.5mm flow direction RMG 1.0mm SM3600AP 1/3Vp-p max Vp-p max magnetic pattern Note: Magnetism units Parameter SI Units CGS Units Note Name Symbol other Name Symbol Magnetic flux Weber Wb V·s Maxwell Mx Mgnetic flux density Tesla T Wb/m2 Gauss G 1[G] = 10-4[T] - - A/m Oersted Oe 1[Oe] = 103/(4π)[A/m] Magnetic field strength 1[Mx] = 10-8[Wb] The magnetic field strength is expressed in [Oe] or [A/m] units, and the magnetic flux density per unit surface area (flux density of magnetic field lines) is expressed in [G] or [T] units. There is no proportional relationship between magnetic field strength and flux density between in-vacuo and in magnetic materials due to the difference in the definition of the units, but for normal measurement in the atmosphere (or vacuo), 1 [Oe] can be converted as approximately 1 [G]. SEIKO NPC CORPORATION - 5 SM3600AP FUNCTIONAL DESCRIPTION Function Overview The SM3600AP is a magnetic sensor module that incorporates magnetic sensor elements, a bias magnet, and an amplifier IC in a compact DIP package, required to detect magnetism. The magnetic sensor elements in the SM3600AP detect changes in the magnetic field along the Y axis as shown in the following figure. The sensor detect the magnetic pattern of measurement objects by detecting changes in the magnetic field, using a bias magnet, as the object moves across the upper surface of the module package in the Y-axis direction. The SM3600AP package surface is not designed to withstand wear, hence the measurement mechanism should be designed so that the measurement object does not come into contact with the surface of the package. The recommended gap (separation between package surface and magnetic pattern) is 0.5 mm. The magnetic field of the bias magnet is aligned so that the Z-axis component in the figure is strongest, with a magnetic flux density at the package surface of 110mT (max). Gap Y axis (magnetic detection direction) magnetic pattern ⊗ X axis Z axis (magnetic orientation of bias magnet) Magnetic detection direction (Y axis), bias magnet magnetic direction (Z axis) The detected magnetic field signal is converted to a voltage, then amplified by 60dB (1000 times amplification) by an internal amplifier, and then output as an analog voltage on the OUT pin. An auto bias function is built-in to help obtain the appropriate DC voltage output signal. Magnetic Sensor Element Layout The magnetic sensor elements are located as shown in the following figure. The measurement object must be aligned with the magnetic sensor elements in order to detect the magnetic pattern. Top View 0.2mm 1.5mm Sensor layout Location of sensors only. The figure does not represent an accurate depiction of sensor size and shape. SEIKO NPC CORPORATION - 6 SM3600AP Operating Procedure When CE is HIGH and SET is LOW, a VDD/2 DC voltage is output on the OUT pin (state 2). Switch the SET pin from LOW to HIGH under conditions of stable magnetic field near the SM3600AP. Bias voltage correction is then performed for 1 ms (max) using the auto bias function (described below). The VDD/2 DC voltage output is maintained during the correction interval (state 3). After correction finishes, the magnetic detection signal is output on the VDD/2 reference voltage on the OUT pin (state 4). VDD VDD CE SET VSS High: VDD Low: VSS required ≧100µs Low: VSS OUT VREF High: VDD state 2: Before the auto-bias function starts maximum 1ms VDD/2 state 3: Auto-bias function in progress detected signal VSS state 1: Standby mode state 4: Normal operation VDD/2 VSS state 1 state 2 state 3 state 4 Timing diagram Auto-Bias Function The auto-bias function corrects the bias voltage of the internal amplifier of the SM3600AP to set the DC output voltage of the magnetic detection signal to the VDD/2 reference voltage. The auto-bias function starts when the SET pin is switched from LOW to HIGH. The bias voltage of the internal amplifier is automatically corrected so that the DC voltage output under the existing magnetic field condition is the VDD/2 reference voltage. After correction is finished (1 ms max.), the magnetic detection signal amplified by the internal amplifier is superimposed on the VDD/2 reference voltage on the OUT pin. The SM3600AP is sensitive to changes in magnetic field, including the geomagnetic field. The auto-bias function should be used at regular intervals if the magnetic field near the sensor modules changes or if the sensor is used continuously for extended periods. To start the auto-bias function, switch the SET pin LOW and then HIGH again. Standby Mode Switch the CE pin to LOW to enter standby mode (state 1). In this mode, the OUT pin output is at VSS level and the current consumption falls to 100 µA (typ). When restarting operation from standby mode, always run the auto-bias function after switching the CE pin to HIGH. SEIKO NPC CORPORATION - 7 SM3600AP TYPICAL APPLICATION CIRCUIT It is necessary to take the difference between VREF and OUT to cancel the power-supply voltage fluctuation. Circuit 1 Low-pass Filter Configuration LPF (low-pass filter) fc (cutoff frequency): 1.94kHz 0→5V 1μF 5V VDD CE SET VREF SM3600AP OUT ADC or CMP 820pF(C) G1 C=1/ (2π×100k×fc) VSS Circuit 2 Configuration with External Amplifier HPF (high-pass filter) fc1 (cutoff frequency): 1.59Hz LPF (low-pass filter) fc2 (cutoff frequency): 194Hz 0→5V 1μF 5V VDD CE HPF:C1=1/ (2π×R1×fc1) SET VREF SM3600AP OUT 100kΩ(R1) 0 to 20dB + 1μF(C1) 8200pF(C2) G1 AMP ADC or CMP − 90kΩ 10kΩ VSS LPF:C2=1/ (2π×100k×fc2) *If a low-pass filter is not used (capacitors C and C2 are not used), leave the G1 pin open-circuit. *The typical applications circuits are for reference purposes only and correct operation using these circuits is not guaranteed. NPC accepts no responsibility for damage or loss caused by their use. Use the circuits only after thorough evaluation. SEIKO NPC CORPORATION - 8 SM3600AP TYPICAL CHARACTERISTICS VDD = 5.0V, Ta = 25°C unless otherwise noted Current consumption (operating mode) Magnetic sensitivity temperature characteristic 8 sample 1 6 7 sample 2 6 sample 3 VMG [V/Oe] 7 IDDO [mA] 5 4 3 5 4 3 2 2 1 1 0 0 4 4.5 5 5.5 -50 6 -25 VDD [V] Current consumption vs. supply voltage Magnetic detection width 0 25 50 Ta [°C] 75 100 Magnetic sensitivity vs. temperature Spatial resolution 5 3 RMG [mm] WMG [mm] 4 3 2 2 1 1 0 0 0 0.5 Gap [mm] 1 Magnetic detection width vs. gap 0 0.5 Gap [mm] 1 Spatial resolution vs. gap Output amplitude characteristic Output amplitude [VPP] 5 sample 1 sample 2 4 sample 3 3 2 1 0 0 0.5 1 Gap [mm] 1.5 Output amplitude vs. gap (pattern width: 1.0mm) SEIKO NPC CORPORATION - 9 SM3600AP DESIGN PRECAUTIONS Effect of Bias Magnet and Magnetic Field The SM3600AP is equipped with a bias magnet. The SM3600AP functions and performance are susceptible to the effects of external magnetic fields, especially in the magnetic detection direction (Y axis in the following figure), which should be taken into consideration when designing detection mechanisms. When using a multi SM3600AP arrangement, maintain an interval of 40 mm (min) between devices along the Y axis to prevent mutual interference between the bias magnets. Devices may be placed closer along the X axis. 10.16mm X axis Y axis (magnetic detection direction) ≥ 40mm Multi SM3600AP arrangement example Effect on Magnetic Field Due to Static Electricity When the transport system is moving non-conductive objects, such as paper, across the device surface, the object may become electrostatically charged by the carrying mechanism material. The SM3600AP can detect the momentary magnetic field generated by current flowing during an electrostatic discharge, which may appear as output noise. Accordingly, anti-static measures should be taken into consideration when designing detection mechanisms. When covering the SM3600AP package surface, the use of non-insulating materials, such as conductive resin material or non-magnetic metals, is recommended. SEIKO NPC CORPORATION - 10 SM3600AP Please pay your attention to the following points at time of using the products shown in this document. 1. The products shown in this document (hereinafter ”Products”) are designed and manufactured to the generally accepted standards of reliability as expected for use in general electronic and electrical equipment, such as personal equipment, machine tools and measurement equipment. The Products are not designed and manufactured to be used in any other special equipment requiring extremely high level of reliability and safety, such as aerospace equipment, nuclear power control equipment, medical equipment, transportation equipment, disaster prevention equipment, security equipment. The Products are not designed and manufactured to be used for the apparatus that exerts harmful influence on the human lives due to the defects, failure or malfunction of the Products. If you wish to use the Products in that apparatus, please contact our sales section in advance. In the event that the Products are used in such apparatus without our prior approval, we assume no responsibility whatsoever for any damages resulting from the use of that apparatus. 2. SEIKO NPC reserves the right to change the specifications of the Products in order to improve the characteristics or reliability thereof. 3. The information described in this document is presented only as a guide for using the Products. No responsibility is assumed by us for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of the third parties. Then, we assume no responsibility whatsoever for any damages resulting from that infringements. 4. The constant of each circuit shown in this document is described as an example, and it is not guaranteed about its value of the mass production products. 5. In the case of that the Products in this document falls under the foreign exchange and foreign trade control law or other applicable laws and regulations, approval of the export to be based on those laws and regulations are necessary. Customers are requested appropriately take steps to obtain required permissions or approvals from appropriate government agencies. SEIKO NPC CORPORATION 1-9-9, Hatchobori, Chuo-ku, Tokyo 104-0032, Japan Telephone: +81-3-5541-6501 Facsimile: +81-3-5541-6510 http://www.npc.co.jp/ Email:[email protected] ND14010-E-00 2014.08 SEIKO NPC CORPORATION - 11