Silicon Carbide (SiC) Product Selector Guide SiC for your Military, Aerospace, and Down-Hole Applications • Extreme Performance Operation Beyond Mil Temp Elevated Temp Range (TJ), -55°C to +250°C Applications Radiation Tolerance >100K RADs TID • More efficient than Silicon, GaAs, & IGBT Lower Conduction and Switching Loss Faster Switching Frequencies Higher Thermal Performance Satellite Solar Inverters • Screened in accordance with MIL-PRF-19500 • Metal / Ceramic Hermetic Packaging Ceramic or glass eyelet options BeO free packaging options Down-Hole Compressor SiC Schottky Diodes 600 & 1200V Blocking Voltage 3 to 15 Amps IF Effective Zero Reverse & Zero Forward Recovery High Frequency Operation High Speed Low Loss Switching SiC FET’s & Transistors 1200V Breakdown Voltages Very Low On Resistance, 40mΩ to 180 mΩ typical at 25O C. Switching Times In ns No Tail Current, No Saturation Voltage Low Gate Charge Positive Temp Coefficient Jet Engine Controls MIL-SPEC Power Supplies October 2013 Rev 4.0 2 Oriel Court, Omega Park • Alton, Hampshire, GU34 2YT, UK • +44 (0) 1420594180 • [email protected] • www.micross.com Silicon Carbide (SiC) Schottky Diodes NEW PRODUCT DEVELOPMENTS Single SiC Power Schottky Diode Part Number Voltage Absolute Max Current MYXDS0600-03AAS 600V 3A MYXDS0600-05AAS 600V 5A MYXDS0600-10AAS 600V 10 A • High Voltage MYXDS1200-03ABS 1200V 3A MYXDS1200-05ABS 1200V 5A • High Temperature MYXDS1200-10ABS 1200V 10 A MYXDS1200-15ABS 1200V 15 A MYXDS3300P20ACS 3300V 0.2 A MYXDS0600-03DA0 600V 3A MYXDS0600-05DA0 600V 5A MYXDS0600-10DA0 600V 10 A from Micross • High Current • High Reliability • Small Outline • Ceramic and Metal • BeO Free Package Style BeO Free Temperature Elevated / Extreme Yes 250°C TO-257 Flat LID TO-257 Domed LID 2 Pin TO-257 Domed LID SMD 0.5 SiC Power Schottky Rectifier / Diode Bridge Part Number AC Inputs Voltage Absolute Max Current MYXDB600-10CDN Dual Phase 600V 10A MYXD3600-10CEN Three Phase 600V 10A Package Style BeO Free Temperature Elevated / Extreme TO-258 5 PIN Yes 250°C TO-257 Flat Lid TO-257 Flat Lid TO-257 Domed Lid 2 Pin TO-257 Domed Lid SMD 0.5 October 2013 Rev 4.0 2 Oriel Court, Omega Park • Alton, Hampshire, GU34 2YT, UK • +44 (0) 1420594180 • [email protected] • www.micross.com Silicon Carbide (SiC) Transistors & MOSFETs NEW Single SiC Power MOSFETs PRODUCT DEVELOPMENTS from Micross Part Number Voltage Absolute Max Current MYXMN1200-20CAB 1200 V 20 A MYXMN1200-40CAB 1200 V 40 A • Low RDS(on) • High Temperature • High Reliability Part Number Voltage Absolute Max Current MYXS00650-07DA0 650 V 7A MYXS00650-15DA0 650 V 15 A • Ceramic and Metal • BeO Free Options TO-259 Temperature Elevated / Extreme No 250°C Package Style BeO Free Temperature Elevated / Extreme SMD 0.5 Yes 250°C BeO Free Temperature Elevated / Extreme TO-258 Single SiC Super Junction Tansistors • High Current • High Voltage BeO Free Package Style Single SiC Power JFETs Part Number Voltage Absolute Max Current Package Style MYXJ11200-17ABB 1200 V 17 A TO-257 Domed MYXJ11200-17BAB 1200 V 17 A TO-254 MYXJ11200-17CAB 1200 V 17 A MYXJ11200-34CAB 1200 V 34 A No 250°C TO-258 SiC Power Transistors Doubles & Half Bridges TO-258 5 pin TO-258 Part Number Device Type Voltage Absolute Max Current Package Style BeO Free MYXMH0600-20CDN MOSFET Half Bridge 600 V 2 x 20 A TO-258 5 pin Yes MYXM21200-20GAB MOSFET Double 1200 V 2 x 20 A MYXB21200-17GAB JFET Double 1200 V 2 x 17 A TO-254 250°C TO-259 SMD 0.5 Temperature Elevated / Extreme No TO-257 Domed Lid October 2013 Rev 4.0 2 Oriel Court, Omega Park • Alton, Hampshire, GU34 2YT, UK • +44 (0) 1420594180 • [email protected] • www.micross.com Part Numbering Rules for SiC Devices SiC Device Nomenclature Sample Part Number Voltage* Prefix Package MYXDS1200-15ABS Device Type Prefix Code Description MYX Micross Current* Isolating Ceramic * Current values are in Amps and voltage in Volts. * Current values are rated as Absolute Max values, working currents should be approximately half this value. * Character “-” used to separate numberical values * Character “P” to indicate decimal point. Package Device Type Isolating Ceramic Code Device Type Code Plating Pins Body Eyelet Lid Code Description DS Diode Shottky AA Ni 3 TO-257 Ceramic Flat 0 None AB Ni 3 TO-257 Ceramic Domed AC Ni 2 TO-257 Ceramic Domed B BeO BA Ni 3 TO-254 Ceramic Flat S Silicon Nitride BB Au 3 TO-254 Ceramic Flat A Alumina BC Au 3 TO-254 Tabless Ceramic Flat N Aluminium Nitride CA Ni 3 TO-258 Ceramic Flat D Diamond DB Diode 2 Phase Bridge D3 Diode 3 Phase Bridge J1 JFET Normally On J0 JFET Normally Off MN MOSFET N Channel MP MOSFET P Channel CB Au 3 TO-258 Ceramic Flat Glass Flat M2 MOSFET 2 Die N Type CC Ni 3 TO-258 MH MOSFET Half Bridge CD Ni 5 TO-258 Glass Flat BN BJT N Channel CE Ni 5 TO-258 Ceramic Flat BP BJT P Channel DA Au 3 SMD 0.5 - Flat B2 BJT 2 Die P Type EA Au 3 SMD 1 - Flat S0 SJT Normally Off FA Au 3 SMD 2 - Flat S1 SJT Normally On GA Ni 6 TO-259 Ceramic Flat For more information regarding our products and services, please visit www.micross.com or call +44 (0) 1420594180. October 2013 Rev 4.0 2 Oriel Court, Omega Park • Alton, Hampshire, GU34 2YT, UK • +44 (0) 1420594180 • [email protected] • www.micross.com